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1. Fabrication and characterization of metal-oxide-nitride-oxynitride-polysilicon nonvolatile semiconductor memory device with silicon oxynitride (Si[O.sub.x][N.sub.y]) as tunneling layer on glass

Author

Hyukjoo Son, Kyungsoo Jang, Kwangsoo Lee, Hyungjun Park, Junsin Yi, and Kiyong Lee

Subjects
Chemical vapor deposition -- Analysis, Polysilicon -- Chemical properties, Polysilicon -- Electric properties, Scanning electron microscopes -- Observations, Semiconductor device, Physics
Abstract

The fabrication of a nonvolatile semiconductor memory (NVSM) device made by using low-temperature poly-Si thin film transistor technology on glass is reported. The NVSM device could find application in various types of display devices.

Published
2007

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