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1. Epitaxially grown GaAsN random laser

Author

Sun, B.Q., Gal, M., Gao, Q., Tan, H.H., and Jagdish, C.; Puzzer, T.; Ouyang, L.; Zou, J.

Subjects
Photoluminescence -- Properties, Nitrogen -- Properties, Gallium arsenide -- Properties, Physics
Abstract

Photoluminescence properties of as-grown GaAs(sub 1-x)N(sub x) epitaxial layers grown on GaAs containing 0.6%, 1.77%, and 2.8% nitrogen is been discussed. It is believed that high gain in combination with structural inhomogeneities that are evident in these GaAs0.972N0.028 layers, can explain the random lasing in such epitaxial layers.

Published
2003

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