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The genetic differences responsible for Serratia marcescens pathogenicity in cucurbits are identified by comparing the genomes of a cucurbit yellow vine disease (CYVD) strain, Z01-A, and a rice endophytic strain, R02-A. Primers are designed based on one Z01-A-specific sequence, A79, and used in a multiplex PCR to discriminate between Serratia marcescens strains causing CYVD and those from other ecological niches.

Ultrafast patch-perfusion electrophysiology and ultraviolet (UV) irradiation are used to investigate the state-dependence of both reversible nicotinic acetylcholine receptors (nAChRs) inhibition by 3-azioctanol and the irreversible effects of photoactivated 3-azioctanol. The results indicate that position alphaE262 on muscle nAChRs contributes to an allosteric modulator site that is strongly coupled to desensitization.

Two different routes which lead to conical structures on laser ablated polymer surfaces is investigated by studying laser ablation on the surfaces of different classes of polymers. Results from experiments with polymide, poly(ethylene terephthalate), nylon 6 and poly(chlorofluoroethylene) are presented. The data would help in exploring various structures that are formed in addition to the cones during laser ablation.

The parasitic contact effects in organic thin film transistors (OTFTs) fabricated with pentacene films are reported. The results demonstrate that top contact and bottom contact device performances may be contact limited for high mobility OTFTs with channel lengths less than 10 mum.

The fabrication of highly dense Zr-doped MgB2 bulk samples through a solid-state reaction at ambient pressure is detailed. A remarkable improvement of flux pinning in Zr-doped samples can be explained by excellent grain connection, the reduction of grain size, and small ZrB2 particles.

A metallization scheme Ti/Al/Mo/Au was developed to form low-resistance ohmic contacts with excellent edge acuity on n-GaN. No degradation in specific contact resistivity was observed for the contacts subjected to long-term annealing at 500 degree Centigrade for 360 h.