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N-channel planar [Al.sub.2][O.sub.3]/Si[O.sub.2]/SiC MOSFETs are fabricated and the effect of a Si[O.sub.2] layer inserted between [Al.sub.2][O.sub.3] and SiC is examined. The results have shown that the interface property of the ultrathin Si[O.sub.2]/SiC structure is very good, but the interface property has degraded when the Si[O.sub.2] thickness is larger than 2 nm due to interfacial layer formation.

Reaction mechanisms for chemical vapor deposition (CVD) of (Ba,Sr)TiO3 (BST) films were investigated by modeling reactions that should occur in the gas phase and on the film surfaces. A conventional model and two other kinds of models: a copolymerization and a surface reflection model, were considered. Findings showed that the experimental models, especially the surface reflection model, are capable of explaining the CVD reaction mechanisms for SrTiO3, and therefore, BST film deposition.

Direction detection of a magnetic field by spin-valve-type magnetic tunnel junction (MTJ) has been investigated at temperatures ranging from room to 150[degrees]C, concentrating on the magnetic property of the pinned layer. Angular dependencies of resistance curves show that detection errors from cosine curve increase with rising temperatures in MTJ with the IrMn/CoFe pinned layer. Measurements of the magnetization curves of the pinned layer found that detection errors are caused by rotation of the pinned layer magnetization. Direction detection of a magnetic field by MTJ with a IrMn/CoFe/Ru/CoFe of synthetic antiferromagnetic (SyAF) pinned layer, in which magnetizations of two CoFe layers nearly cancel each other, was also investigated. We confirmed that the pinned layer of SyAF structure in MTJ effectively reduces the dependence of detection errors on temperature. Index Terms--Magnetic sensors, magnetic tunnel junctions, spin valves, synthetic antiferromagnet.