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The temperature dependence of the extraordinary Hall effect (EHE) in ultrathin films of the itinerant ferromagnet SrRu[O.sub.3] is dependence. The resistivity of the film has varied significantly with their thickness, whereas the EHE at low temperatures is determined solely by resistivity.

The changes in the resistivity anisotropy of epitaxial SrRu[O.sub.3] films due to induced magnetization in the paramagnetic state are explored by using the planar Hall effect. The studies have shown that the effect of the induced magnetization on the in-plane anisotropy is angular dependent, and have provided a full description of this behavior at 160 K for induced magnetization in the (001) plane.

The destabilization of a fully magnetized state by pulses of spin polarized current is studied. The studies have shown a qualitative difference between destabilizing current and the current required for depinning domain walls in the same region and has suggested that the destabilizing current is related to current-induced nucleation.

The paramagnetic anisotropic magnetoresistance in thin films of SrRuO3 is discussed. Significant anisotropic magnetoresistance (AMR) is present in the paramagnetic state with relatively small M and a large effect of the orientation of M and J relative to the crystals axis.