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A study investigated the properties of three-terminal, three-color a-SiC:H/a-Si:H-based TCO/PINIP/TCO/PIN/metal detector assemblies with a focus on the optical and transient behavior organization. Different TCO/PINIP/TCO/PIN/metal detector assemblies featuring different TCO surface properties were compared in terms of steady-state properties, advantages and disadvantages. Experimental methodology, results and conclusions are discussed.

A study was conducted to analyze the role of a thin microcrystalline p(mu-c-Si:H) layer in a p-i-n hydrogenated amorphous silicon based solar cell. The band gap was examined using internal photoemission measurements. The effects of the double window layer on solar cell performance was also investigated in the study. Results indicated that the i(a-SiC:H) buffer layer significantly enhanced the performance of solar cells. Findings also showed that the buffer layer influences the cell's fill factor.

Photocurrent measurements of the transient phenomena in amorphous silicon devices are obtained using the program TRansient Amorphous DEvice Simulator. This program evaluates variables such as light intensity and temperature dependence of the secondary photocurrent. Numerical analysis shows that higher illumination levels and higher temperatures result to faster transients.