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1. Analysis of the recombination velocity and of the electron beam induced current contrast at the interface between a metallic precipitate and a semiconductor matrix

Author

Debez, M., Tarento, R.-J., and Mekki, D.E.

Subjects
Electron beams -- Research, Semiconductor films -- Spectra, Recombinases -- Analysis, Physics
Abstract

A self-consistent calculation of the barrier height and of the effective recombination velocity at the interface between a metallic precipitate and a semiconductor matrix is performed within the Read-Hall-Shockley framework. The current contrast is examined versus the size for different defect concentrations, incident beam energies and for the two kinds of defect distribution.

Published
2008

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