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1. Polymorphism in the ferromagnetic GaCrN-diluted magnetic semiconductor: Luminescence and structural investigations

Author

Shanthi, S., Hashimoto, M., Zhou, Y.K., Kimura, S., Kim, M.S., Emura, S., Hasuike, N., Harima, H., Hasegawa, S., Ishimaru, M., Hirotsu, Y., and Asahi, H.

Subjects
Luminescence -- Analysis, Gallium compounds -- Electric properties, Transmission electron microscopes -- Usage, Physics
Abstract

The luminescence properties of the transition-metal chromium-doped gallium nitride (GaCrN) epitaxial layers on sapphire substrates are analyzed by varying the doping level, excitation intensity and temperature. High-resolution transmission electron microscopy and selected area electron-diffraction patterns provide a visual comparison and authenticate the doping-induced polymorphism in the GaCrN films.

Published
2005

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