1. Breaking the Trade-Off Between Mobility and On-Off Ratio in Oxide Transistors.
- Author
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Chang YC, Wang ST, Lee YT, Huang CS, Hsu CH, Weng TT, Huang CC, Chen CW, Chou TT, Chang CY, Woon WY, Lin CL, Sun JY, and Lien DH
- Abstract
Amorphous oxide semiconductors (AOS) are pivotal for next-generation electronics due to their high electron mobility and excellent optical properties. However, In
2 O3 , a key material in this family, encounters significant challenges in balancing high mobility and effective switching as its thickness is scaled down to nanometer dimensions. The high electron density in ultra-thin In2 O3 hinders its ability to turn off effectively, leading to a critical trade-off between mobility and the on-current (Ion )/off-current (Ioff ) ratio. This study introduces a mild CF4 plasma doping technique that effectively reduces electron density in 10 nm In2 O3 at a low processing temperature of 70 °C, achieving a high mobility of 104 cm2 V⁻¹ s⁻¹ and an Ion /Ioff ratio exceeding 10⁸. A subsequent low-temperature post-annealing further improves the critical reliability and stability of CF4 -doped In2 O3 without raising the thermal budget, making this technique suitable for monolithic three-dimensional (3D) integration. Additionally, its application is demonstrated in In2 O3 depletion-load inverters, highlighting its potential for advanced logic circuits and broader electronic and optoelectronic applications., (© 2024 Wiley‐VCH GmbH.)- Published
- 2025
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