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Rare earth-doped zinc oxide (ZnO:RE) systems are attractive for future optoelectronic devices such as phosphors, displays, and LEDs with emission in the visible spectral range, working even in a radiation-intense environment. The technology of these systems is currently under development, opening up new fields of application due to the low-cost production. Ion implantation is a very promising technique to incorporate rare-earth dopants into ZnO. However, the ballistic nature of this process makes the use of annealing essential. The selection of implantation parameters, as well as post-implantation annealing, turns out to be non-trivial because they determine the luminous efficiency of the ZnO:RE system. This paper presents a comprehensive study of the optimal implantation and annealing conditions, ensuring the most efficient luminescence of RE 3+ ions in the ZnO matrix. Deep and shallow implantations, implantations performed at high and room temperature with various fluencies, as well as a range of post-RT implantation annealing processes are tested: rapid thermal annealing (minute duration) under different temperatures, times, and atmospheres (O 2 , N 2 , and Ar), flash lamp annealing (millisecond duration) and pulse plasma annealing (microsecond duration). It is shown that the highest luminescence efficiency of RE 3+ is obtained for the shallow implantation at RT with the optimal fluence of 1.0 × 10 15 RE ions/cm 2 followed by a 10 min annealing in oxygen at 800 °C, and the light emission from such a ZnO:RE system is so bright that can be observed with the naked eye.

The characteristics of two-dimensional (2D) materials can be tuned by low-energy ion irradiation provided that the ion energy is correctly chosen. The optimum ion energy is related to E th ion , the minimum kinetic energy the ion should have to displace an atom from the material. E th ion can be assessed using the binary collision approximation (BCA) when the displacement threshold of the atom is known. However, for some ions the experimental data contradict the BCA results. Using density functional theory molecular dynamics (DFT-MD), we study the collisions of low-energy ions with graphene and hexagonal boron nitride and demonstrate that the BCA can strongly overestimate E th ion because energy transfer takes a finite time, and therefore, chemical interactions of the ion with the target are important. Finally, for all projectiles from H up to Ar, we calculate the values of E th ion required to displace an atom from graphene and h-BN, the archetypal 2D materials.

Low-energy ion irradiation of III-V semiconductor surfaces can lead to the formation of regular hexagonal dot patterns at the surface. We present experimental and computational results for ion irradiation of GaSb surfaces which elucidate the nature of the coupled compositional and morphological pattern-formation mechanisms. We demonstrate by in-situ grazing-incidence small-angle x-ray scattering (GISAXS) and angle-resolved Auger electron spectroscopy (ARAES) that the emergence of an altered compositional depth profile is essential to induce morphological changes at the surface. This morphological evolution of the surface follows nucleation-and-growth kinetics. Furthermore, we show from massive-scale molecular dynamics (MD) simulations that the compositional depth profile evolution leads to thermodynamic phase separation, providing a lateral compositional instability that drives pattern formation. Additionally, high-fluence simulations elucidate the irradiation-induced mechanisms of compositional depth profile formation. Prompt ion effects drive formation of single-element "protoclusters", predominantly of Sb. Structural and energetic characterization of the simulation results indicate that Sb may be more mobile than Ga, providing a diffusional pathway for long-temporal-scale compositional evolution of the irradiated surface. Our findings motivate the development of new, comprehensive models which consider the total spatial and temporal complexity of multicomponent systems evolving under ion irradiation.

In this work we report for the first time a method to modify the surface of Cu 2 O nanowires in a controllable way and physically weld them into a network form, which contributes to higher electrical conductivity as well as a strong water-repelling nature. We have used state-of-the-art theoretical calculations to support our experimental observations. We demonstrate how varying the irradiation fluence can modulate the surface and decorate the nanowire with a uniform distribution of Cu 8 O nanocrystals due to preferential sputtering. While several well studied joining techniques are available for carbon and metal-based nanowires, the same information for ceramic nanowires is scarce at present. The current study sheds light into this and a state-of-the-art 3D simulation technique predicts most of the modifications including surface modulation, oxygen depletion and welding. The welded network shows higher electrical conductivity than the unwelded assembly. With Cu 2 O being of p-type the current ion beam joining technique shows a novel path for fabricating p-i-n junctions or solar cell devices through bottom-up approach. Furthermore, we have explored the response of this network to moisture. Our calculation based on density functional theory predicts the hydrophilic nature of individual copper oxide nanowires both before and after irradiation. However, the network shows a strong water-repelling nature, which has been explained quantitatively using the Cassie-Baxter model.

We report on a new versatile experimental setup for in situ Rutherford backscattering spectrometry at solid-liquid interfaces which enables investigations of electric double layers directly and in a quantitative manner. A liquid cell with a three-electrode arrangement is mounted in front of the beam line, and a thin Si 3 N 4 window (thickness down to 150 nm) separates the vacuum of the detector chamber from the electrolyte in the cell. By minimizing the contribution of the window to the measurement, a large variety of elements at the solid-liquid interface with sensitivities far below one monolayer can be monitored. The attachment of Ba onto the Si 3 N 4 surface as a function of contact time and pH value of the electrolyte solution was chosen as an example system. From our measurement, we can not only follow the evolution of the double layer but also derive limits for the point of zero charge for the Si 3 N 4 surface. Our findings of 5.7≤pH PZC ≤6.2 are in good agreement with values found in the literature obtained by other techniques. Despite focusing on a specific system in this work, the presented setup allows for a large variety of in situ investigations at solid-liquid interfaces such as, but not limited to, tracing electrochemical reactions and monitoring segregation, adsorption, and dissolution and corrosion processes.

Gratings, one of the most important energy dispersive devices, are the fundamental building blocks for the majority of optical and optoelectronic systems. The grating period is the key parameter that limits the dispersion and resolution of the system. With the rapid development of large X-ray science facilities, gratings with periodicities below 50 nm are in urgent need for the development of ultrahigh-resolution X-ray spectroscopy. However, the wafer-scale fabrication of nanogratings through conventional patterning methods is difficult. Herein, we report a maskless and high-throughput method to generate wafer-scale, multilayer gratings with period in the sub-50 nm range. They are fabricated by a vacancy epitaxy process and coated with X-ray multilayers, which demonstrate extremely large angular dispersion at approximately 90 eV and 270 eV. The developed new method has great potential to produce ultrahigh line density multilayer gratings that can pave the way to cutting edge high-resolution spectroscopy and other X-ray applications.

A helium ion microscope, known for high resolution imaging and modification with helium or neon ions, has been equipped with a time-of-flight spectrometer for compositional analysis. Here we report on its design, implementation and show first results of this powerful add-on. Our design considerations were based on the results of detailed ion collision cascade simulations that focus on the physically achievable resolution for various detection limits. Different secondary ion extraction geometries and spectrometer types are considered and compared with respect to the demands and limitations of the microscope. As a result the development and evaluation of a secondary ion extraction optics and time-of-flight spectrometer that allows the parallel measurement of all secondary ion masses is reported. First experimental results demonstrate an excellent mass resolution as well as high-resolution secondary ion imaging capabilities with sub-8 nm lateral resolution. The combination of high resolution secondary electron images and mass-separated sputtered ion distributions have a high potential to answer open questions in microbiology, cell biology, earth sciences and materials research., (Copyright © 2019 Elsevier B.V. All rights reserved.)

For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si + or Ne + ion beam mixing of Si into a buried SiO 2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted to gain atomistic insight into the influence of relevant experimental parameters on the Si NC formation process. Energy-filtered transmission electron microscopy is performed to obtain quantitative values on the Si NC size and distribution in dependence of the layer stack geometry, ion fluence and thermal budget. Employing a focused Ne + beam from a helium ion microscope, we demonstrate site-controlled self-assembly of single Si NCs. Line irradiation with a fluence of 3000 Ne + /nm 2 and a line width of 4 nm leads to the formation of a chain of Si NCs, and a single NC with 2.2 nm diameter is subsequently isolated and visualized in a few nanometer thin lamella prepared by a focused ion beam (FIB). The Si NC is centered between the SiO 2 layers and perpendicular to the incident Ne + beam.

We present an ultrahigh vacuum setup for ion spectroscopy of freestanding two-dimensional solid targets. An ion beam of different ion species (e.g., Xe with charge states from 1 to 44 and Ar with charge states from 1 to 18) and kinetic energies ranging from a few 10 eV to 400 keV is produced in an electron beam ion source. Ions are detected after their transmission through the 2D target with a position sensitive microchannel plate detector allowing the determination of the ion's exit charge state as well as the scattering angle with a resolution of approximately 0.04°. Furthermore, the spectrometer is mounted on a swiveling frame covering a scattering angle of ±8° with respect to the incoming beam direction. By utilizing a beam chopper, we measure the time-of-flight of the projectiles and determine the energy loss when passing a 2D target with an energy uncertainty of about 2%. Additional detectors are mounted close to the target to observe emitted secondary particles and are read-out in coincidence with the position and time information of the ion detector. A signal in these detectors can also be used as a start trigger for time-of-flight measurements, which then yield an energy resolution of 1% and an approximately 1000-fold larger duty cycle. First results on the interaction of slow Xe 30+ ions with a freestanding single layer of graphene obtained with the new setup are compared to recently published data where charge exchange and energy were measured by means of an electrostatic analyzer.

Efficient substrates for surface-enhanced Raman spectroscopy (SERS) are under constant development, since time-consuming and costly fabrication routines are often an issue for high-throughput spectroscopy applications. In this research, we use a two-step fabrication method to produce self-organized parallel-oriented plasmonic gold nanostructures. The fabrication routine is ready for wafer-scale production involving only low-energy ion beam irradiation and metal deposition. The optical spectroscopy features of the resulting structures show a successful bidirectional plasmonic response. The localized surface plasmon resonances (LSPRs) of each direction are independent from each other and can be tuned by the fabrication parameters. This ability to tune the LSPR characteristics allows the development of optimized plasmonic nanostructures to match different laser excitations and optical transitions for any arbitrary analyte. Moreover, in this study, we probe the polarization and wavelength dependence of such bidirectional plasmonic nanostructures by a complementary spectroscopic ellipsometry and Raman spectroscopy analysis. We observe a significant signal amplification by the SERS substrates and determine enhancement factors of over a thousand times. We also perform finite element method-based calculations of the electromagnetic enhancement for the SERS signal provided by the plasmonic nanostructures. The calculations are based on realistic models constructed using the same particle sizes and shapes experimentally determined by scanning electron microscopy. The spatial distribution of electric field enhancement shows some dispersion in the LSPR, which is a direct consequence of the semi-random distribution of hotspots. The signal enhancement is highly efficient, making our SERS substrates attractive candidates for high-throughput chemical sensing applications in which directionality, chemical stability, and large-scale fabrication are essential requirements., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic, mechanical and chemical properties, although directly observed substitutions have thus far been limited to incidental Si impurities and P, N and B dopants introduced using low-energy ion implantation. We present here the heaviest impurity to date, namely 74 Ge + ions implanted into monolayer graphene. Although sample contamination remains an issue, atomic resolution scanning transmission electron microscopy imaging and quantitative image simulations show that Ge can either directly substitute single atoms, bonding to three carbon neighbors in a buckled out-of-plane configuration, or occupy an in-plane position in a divacancy. First-principles molecular dynamics provides further atomistic insight into the implantation process, revealing a strong chemical effect that enables implantation below the graphene displacement threshold energy. Our results demonstrate that heavy atoms can be implanted into the graphene lattice, pointing a way toward advanced applications such as single-atom catalysis with graphene as the template.

The way conduction electrons respond to ultrafast external perturbations in low dimensional materials is at the core of the design of future devices for (opto)electronics, photodetection and spintronics. Highly charged ions provide a tool for probing the electronic response of solids to extremely strong electric fields localized down to nanometre-sized areas. With ion transmission times in the order of femtoseconds, we can directly probe the local electronic dynamics of an ultrathin foil on this timescale. Here we report on the ability of freestanding single layer graphene to provide tens of electrons for charge neutralization of a slow highly charged ion within a few femtoseconds. With values higher than 10 12  A cm -2 , the resulting local current density in graphene exceeds previously measured breakdown currents by three orders of magnitude. Surprisingly, the passing ion does not tear nanometre-sized holes into the single layer graphene. We use time-dependent density functional theory to gain insight into the multielectron dynamics.

DNA origami nanostructures have been used extensively as scaffolds for numerous applications such as for organizing both organic and inorganic nanomaterials, studying single molecule reactions, and fabricating photonic devices. Yet, little has been done toward the integration of DNA origami nanostructures into nanoelectronic devices. Among other challenges, the technical difficulties in producing well-defined electrical contacts between macroscopic electrodes and individual DNA origami-based nanodevices represent a serious bottleneck that hinders the thorough characterization of such devices. Therefore, in this work, we have developed a method to electrically contact individual DNA origami-based metallic nanowires using electron beam lithography. We then characterize the charge transport of such nanowires in the temperature range from room temperature down to 4.2 K. The room temperature charge transport measurements exhibit ohmic behavior, whereas at lower temperatures, multiple charge transport mechanisms such as tunneling and thermally assisted transport start to dominate. Our results confirm that charge transport along metallized DNA origami nanostructures may deviate from pure metallic behavior due to several factors including partial metallization, seed inhomogeneities, impurities, and weak electronic coupling among AuNPs. Besides, this study further elucidates the importance of variable temperature measurements for determining the dominant charge transport mechanisms for conductive nanostructures made by self-assembly approaches.

Slow highly charged ions have been utilized recently for the creation of monotype surface nanostructures (craters, calderas, or hillocks) in different materials. In the present study, we report on the ability of slow highly charged xenon ions (^{129}Xe^{Q+}) to form three different types of nanostructures on the LiF(100) surface. By increasing the charge state from Q=15 to Q=36, the shape of the impact induced nanostructures changes from craters to hillocks crossing an intermediate stage of caldera structures. A dimensional analysis of the nanostructures reveals an increase of the height up to 1.5 nm as a function of the potential energy of the incident ions. Based on the evolution of both the geometry and size of the created nanostructures, defect-mediated desorption and the development of a thermal spike are utilized as creation mechanisms of the nanostructures at low and high charge states, respectively.

Time of flight backscattering spectrometry (ToF-BS) was successfully implemented in a helium ion microscope (HIM). Its integration introduces the ability to perform laterally resolved elemental analysis as well as elemental depth profiling on the nm scale. A lateral resolution of ≤54nm and a time resolution of Δt≤17ns(Δt/t≤5.4%) are achieved. By using the energy of the backscattered particles for contrast generation, we introduce a new imaging method to the HIM allowing direct elemental mapping as well as local spectrometry. In addition laterally resolved time of flight secondary ion mass spectrometry (ToF-SIMS) can be performed with the same setup. Time of flight is implemented by pulsing the primary ion beam. This is achieved in a cost effective and minimal invasive way that does not influence the high resolution capabilities of the microscope when operating in standard secondary electron (SE) imaging mode. This technique can thus be easily adapted to existing devices. The particular implementation of ToF-BS and ToF-SIMS techniques are described, results are presented and advantages, difficulties and limitations of this new techniques are discussed., (Copyright © 2015 Elsevier B.V. All rights reserved.)

Semiconductor quantum dots and wires are important building blocks for future electronic and optoelectronic devices. The common way of producing semiconductor nanostructures is by molecular beam epitaxy (MBE). In this additive growth process atoms are deposited onto crystalline surfaces and self-assemble into 3D structures. Here we present a subtractive process, in which surface vacancies are created by ion impacts. On terraces of crystalline surfaces their nucleation forms depressions which coarsen and finally lead to a self-organized 3D morphology. It is shown that this kind of spontaneous pattern formation is inherent to the ion induced erosion process on crystalline surfaces and is analogous to 3D growth by MBE. However, novel facets are found due to slightly different energetics and kinetics of ad-atoms and surface vacancies, especially at Ehrlich-Schwoebel step-edge barriers. Depending on the crystal orientation, three-fold, four-fold, six-fold symmetry, as well as extremely regular periodic nanogrooves can be produced on different orientations of group IV (Si, Ge) and III-V (GaAs, InAs) semiconductors.

DNA origami has become an established technique for designing well-defined nanostructures with any desired shape and for the controlled arrangement of functional nanostructures with few nanometer resolution. These unique features make DNA origami nanostructures promising candidates for use as scaffolds in nanoelectronics and nanophotonics device fabrication. Consequently, a number of studies have shown the precise organization of metallic nanoparticles on various DNA origami shapes. In this work, we fabricated large arrays of aligned DNA origami decorated with a high density of gold nanoparticles (AuNPs). To this end, we first demonstrate the high-yield assembly of high-density AuNP arrangements on DNA origami adsorbed to Si surfaces with few unbound background nanoparticles by carefully controlling the concentrations of MgCl2 and AuNPs in the hybridization buffer and the hybridization time. Then, we evaluate two methods, i.e., hybridization to prealigned DNA origami and molecular combing in a receding meniscus, with respect to their potential to yield large arrays of aligned AuNP-decorated DNA origami nanotubes. Because of the comparatively low MgCl2 concentration required for the efficient immobilization of the AuNPs, the prealigned DNA origami become mobile and displaced from their original positions, thereby decreasing the alignment yield. This increased mobility, on the other hand, makes the adsorbed origami susceptible to molecular combing, and a total alignment yield of 86% is obtained in this way.

Off-normal, polarization dependent second-harmonic generation (SHG) measurements were performed ex situ on plasmonic nanostructures grown by self-assembly on nanopatterned templates. These exploratory studies of Ag nanoparticle (NP) arrays show that the sensitivity of SHG to the local fields, which are modified by the NP size, shape and distribution, makes it a promising fixed wavelength characterization technique that avoids the complexity of spectroscopic SHG. The off-normal geometry provides access to the out-of-plane SH response, which is typically an order-of-magnitude larger than the in-surface-plane response measured using normal incidence, for example in SHG microscopy. By choosing the plane of incidence orthogonal to the NP array direction, it was shown that the p-polarized SH response, as a function of input polarization, is very sensitive to NP morphology, with a change of 20% in the aspect ratio of the NPs producing a variation of a factor of 30 in the easily measureable ratio of the p-polarized SH field strength for s- and p-polarized input. The results show that such a fixed geometry could be used for the in situ characterization of anisotropic nanostructure morphology during growth by self-assembly, which could be particularly useful in situations where rotating the sample may be neither desirable nor easily accomplished.

Experimental charge exchange and energy loss data for the transmission of slow highly charged Xe ions through ultrathin polymeric carbon membranes are presented. Surprisingly, two distinct exit charge state distributions accompanied by charge exchange dependent energy losses are observed. The energy loss for ions exhibiting large charge loss shows a quadratic dependency on the incident charge state indicating that equilibrium stopping force values do not apply in this case. Additional angle resolved transmission measurements point on a significant contribution of elastic energy loss. The observations show that regimes of different impact parameters can be separated and thus a particle's energy deposition in an ultrathin solid target may not be described in terms of an averaged energy loss per unit length.

Anisotropic nanoparticle (NP) arrays with useful optical properties, such as localized plasmon resonances (LPRs), can be grown by self-assembly on substrates. However, these systems often have significant dispersion in NP dimensions and distribution, which makes a numerical approach to modeling the LPRs very difficult. An improved analytic approach to this problem is discussed in detail and applied successfully to NP arrays from three systems that differ in NP metal, shape and distribution, and in substrate and capping layer. The materials and anisotropic NP structures that will produce LPRs in desired spectral regions can be determined using this approach.

Low energy ion beam pattern formation on Si with simultaneous co-deposition of Ag, Pd, Pb, Ir, Fe or C impurities was investigated by in situ scanning tunneling microscopy as well as ex situ atomic force microscopy, scanning electron microscopy, transmission electron microscopy and Rutherford backscattering spectrometry. The impurities were supplied by sputter deposition. Additional insight into the mechanism of pattern formation was obtained by more controlled supply through e-beam evaporation. For the situations investigated, the ability of the impurity to react with Si, i.e. to form a silicide, appears to be a necessary, but not a sufficient condition for pattern formation. Comparing the effects of impurities with similar mass and nuclear charge, the collision kinetics is shown to be not of primary importance for pattern formation. To understand the observed phenomena, it is necessary to assume a bi-directional coupling of composition and height fluctuations. This coupling gives rise to a sensitive dependence of the final morphology on the conditions of impurity supply. Because of this history dependence, the final morphology cannot be uniquely characterized by a steady state impurity concentration.

We report on the effect of microstructure and geometrically induced modifications of the magnetic properties of granular CoCrPt:SiO2 films with weakly interacting magnetic grains deposited on pre-structured GaSb nanocone templates fabricated by an ion erosion technique. By tuning the irradiation conditions, nanocone patterns of different cone sizes were prepared (from 28 to 120 nm in diameter and 32 to 330 nm high, respectively). The influence of the intergranular exchange coupling was also investigated by varying the SiO2 content from 8 to 12 at.%. Deposition of CoCrPt:SiO2 on samples with small nanocones leads to a close magnetic grain packing, which results in the formation of extended magnetic domains larger than the average distance between the GaSb cones. In contrast, on larger nanocones, the magnetic coating grows on the side-walls, with a large separation between neighboring cones, leading to magnetic single-domain regions, which are correlated to the underlying structure. Magnetometry indicates that both remanence and coercivity decrease with increasing cone size and/or SiO2 content due to a combined effect of the angular distribution of the magnetic easy axis of the grains and the intergranular exchange coupling strength.

Ferromagnetism in certain alloys consisting of magnetic and nonmagnetic species can be activated by the presence of chemical disorder. This phenomenon is linked to an increase in the number of nearest-neighbor magnetic atoms and local variations in the electronic band structure due to the existence of disorder sites. An approach to induce disorder is through exposure of the chemically ordered alloy to energetic ions; collision cascades formed by the ions knock atoms from their ordered sites and the concomitant vacancies are filled randomly via thermal diffusion of atoms at room temperature. The ordered structure thereby undergoes a transition into a metastable solid solution. Here we demonstrate the patterning of highly resolved magnetic structures by taking advantage of the large increase in the saturation magnetization of Fe60Al40 alloy triggered by subtle atomic displacements. The sigmoidal characteristic and sensitive dependence of the induced magnetization on the atomic displacements manifests a sub-50 nm patterning resolution. Patterning of magnetic regions in the form of stripes separated by ∼ 40 nm wide spacers was performed, wherein the magnet/spacer/magnet structure exhibits reprogrammable parallel (↑/spacer/↑) and antiparallel (↑/spacer/↓) magnetization configurations in zero field. Materials in which the magnetic behavior can be tuned via ion-induced phase transitions may allow the fabrication of novel spin-transport and memory devices using existing lateral patterning tools.

The controlled positioning of DNA nanostructures on technologically relevant surfaces represents a major goal along the route toward the full-scale integration of DNA-based materials into nanoelectronic and sensor devices. Previous attempts to arrange DNA nanostructures into defined arrays mostly relied on top-down lithographic patterning techniques combined with chemical surface functionalization. Here we combine two bottom-up techniques for nanostructure fabrication, i.e., self-organized nanopattern formation and DNA origami self-assembly, in order to demonstrate the electrostatic self-alignment of DNA nanotubes on topographically patterned silicon surfaces. Self-organized nanoscale ripple patterns with periodicities ranging from 20 nm to 50 nm are fabricated by low-energy ion irradiation and serve as substrates for DNA origami adsorption. Electrostatic interactions with the charged surface oxide during adsorption direct the DNA origami nanotubes to the ripple valleys and align them parallel to the ripples. By optimizing the pattern dimensions and the Debye length of the adsorption buffer, we obtain an alignment yield of ∼70%. Since this novel and versatile approach does not rely on any chemical functionalization of the surface or the DNA nanotubes, it can be applied to virtually any substrate material and any top-down or bottom-up nanopatterning technique. This technique thus may enable the wafer-scale fabrication of ordered arrays of functional DNA-based nanowires.

A controlled shunting of polycrystalline oxide thin films on the nanometer length scale opens the door to significantly modify their transport properties. In this paper, the low energy Ar(+) irradiation induced shunting effect of forming-free, non-volatile resistive switching in polycrystalline BiFeO3 thin film capacitor-like structures with macroscopic bottom and top contacts was investigated. Oxygen atoms at the BiFeO3 surface are preferentially sputtered by Ar(+) ion irradiation and oxygen vacancies and a metallic Bi phase are formed at the surface of the BiFeO3 thin film before deposition of the top contacts. A phenomenological model is that of nanoscale shunt resistors formed in parallel to the actual BiFeO3 thin film capacitor-like structure. This model fits the noticeable increase of the retention stability and current density after irradiation. The formation of stable and conductive shunts is further evidenced by conductive atomic force microscopy measurements.

Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces irradiation at temperatures above the recrystallization temperature of 250 °C leads to self-organized patterns of inverse pyramids. Checkerboard patterns with fourfold symmetry evolve on the Ge (100) surface, whereas on the Ge (111) surface, isotropic patterns with a sixfold symmetry emerge. After high-fluence irradiations, these patterns exhibit well-developed facets. A deterministic nonlinear continuum equation accounting for the effective surface currents due to an Ehrlich-Schwoebel barrier for diffusing vacancies reproduces remarkably well our experimental observations.

Due to their reduced dimensions, the mechanical properties of nanostructures may differ substantially from those of bulk materials. Quantifying and understanding the nanomechanical properties of individual nanostructures is thus of tremendous importance both from a fundamental and a technological point of view. Here we employ a recently introduced atomic force microscopy mode, i.e., peak-force quantitative nanomechanical imaging, to map the local elastic properties of nanostructured germanium surfaces. This imaging mode allows the quantitative determination of the Young's modulus with nanometer resolution. Heavy-ion irradiation was used to fabricate different self-organized nanostructures on germanium surfaces. Depending on the sample temperature during irradiation, nanoporous sponge-like structures and hexagonally ordered nanodots are obtained. The sponge-like germanium surface is found to exhibit a surprisingly low Young's modulus well below 10 GPa, which furthermore depends on the ion energy. For the nanodot patterns, local variations in the Young's modulus are observed: at moderate sample temperatures, the dot crests have a lower modulus than the dot valley whereas this situation is reversed at high temperatures. These observations are explained by vacancy dynamics in the amorphous germanium matrix during irradiation. Our results furthermore offer the possibility to tune the local elastic properties of nanostructured germanium surfaces by adjusting the ion energy and sample temperature.

Silver nanoparticles and nanowires self-aligned on pre-patterned rippled substrate are presented as active surface enhanced Raman scattering (SERS) substrates. The reported inter-particle gap of 5 nm and array periodicity of 35 nm are much lower than current lithographic limits. The observed anisotropy in SERS and surface plasmon resonance in such arrays is attributed to different plasmonic field enhancement along and across the chains of nanoparticles not due to shape anisotropy. For nanoparticle arrays higher SERS intensity is found along the particle chain, but for nanowire arrays higher SERS intensity is found for excitation across the wires. Higher intensity across nanowire arrays supports the argument that the SERS phenomenon is due to electromagnetic field enhancement (hot-junctions) caused by localized surface plasmon resonance across the nanowires having a 35 nm gap. The effect of inter-particle gap, ordering, and aspect ratio on field enhancement is demonstrated. Higher SERS intensity is observed in aligned elongated nanoparticles compared to aligned spherical, non-ordered nanoparticles, or aligned nanowires. Aligned silver nanowires enhance Raman scattering more strongly than aligned gold nanowires.

The impact of individual slow highly charged ions (HCI) on alkaline earth halide and alkali halide surfaces creates nano-scale surface modifications. For different materials and impact energies a wide variety of topographic alterations have been observed, ranging from regularly shaped pits to nanohillocks. We present experimental evidence for the creation of thermodynamically stable defect agglomerations initially hidden after irradiation but becoming visible as pits upon subsequent etching. A well defined threshold separating regions with and without etch-pit formation is found as a function of potential and kinetic energies of the projectile. Combining this novel type of surface defects with the previously identified hillock formation, a phase diagram for HCI induced surface restructuring emerges. The simulation of the energy deposition by the HCI in the crystal provides insight into the early stages of the dynamics of the surface modification and its dependence on the kinetic and potential energies.

This topical review focuses on recent advances in the understanding of the formation of surface nanostructures, an intriguing phenomenon in ion-surface interaction due to the impact of individual ions. In many solid targets, swift heavy ions produce narrow cylindrical tracks accompanied by the formation of a surface nanostructure. More recently, a similar nanometric surface effect has been revealed for the impact of individual, very slow but highly charged ions. While swift ions transfer their large kinetic energy to the target via ionization and electronic excitation processes (electronic stopping), slow highly charged ions produce surface structures due to potential energy deposited at the top surface layers. Despite the differences in primary excitation, the similarity between the nanostructures is striking and strongly points to a common mechanism related to the energy transfer from the electronic to the lattice system of the target. A comparison of surface structures induced by swift heavy ions and slow highly charged ions provides a valuable insight to better understand the formation mechanisms., (© 2011 IOP Publishing Ltd)

InAs with an extremely high electron mobility (up to 40,000 cm(2)/V s) seems to be the most suitable candidate for better electronic devices performance. Here we present a synthesis of inverted crystalline InAs nanopyramids (NPs) in silicon using a combined hot ion implantation and millisecond flash lamp annealing techniques. Conventional selective etching was used to form the InAs/Si heterojunction. The current-voltage measurement confirms the heterojunction diode formation with the ideality factor of η = 4.6. Kelvin probe force microscopy measurements indicate a type-II band alignment of n-type InAs NPs on p-type silicon. The main advantage of our method is its integration with large-scale silicon technology, which also allows applying it for Si-based electronic devices.

The dynamics of patterns in large two-dimensional domains remains a challenge in nonequilibrium phenomena. Often it is addressed through mild extensions of one-dimensional equations. We show that full two-dimensional generalizations of the latter can lead to unexpected dynamic behavior. As an example we consider the anisotropic Kuramoto-Sivashinsky equation, which is a generic model of anisotropic pattern forming systems and has been derived in different instances of thin film dynamics. A rotation of a ripple pattern by 90° occurs in the system evolution when nonlinearities are strongly suppressed along one direction. This effect originates in nonlinear parameter renormalization at different rates in the two system dimensions, showing a dynamic interplay between scale invariance and wavelength selection. Potential experimental realizations of this phenomenon are identified.

Highly ordered Ag nanocluster structures have been grown on pre-patterned amorphous SiO(2) surfaces by oblique angle physical vapor deposition at room temperature. Despite the small undulation of the rippled surface, the stripe-like Ag nanoclusters are very pronounced, reproducible and well separated. Computer modeling of the growth has been performed with a lattice-based kinetic Monte Carlo (KMC) method using a combination of a simplified inter-atomic potential and experimental transition barriers taken from the literature. An effective transition event classification method is introduced which allows a boost factor of several thousand compared to a traditional KMC approach, thus allowing experimental time scales to be modeled. The simulation predicts a low sticking probability for the arriving atoms, millisecond order lifetimes for single Ag adatoms and ≈1 nm square surface migration ranges of Ag adatoms. It is also shown that metal nucleations can trigger even on defect free surfaces. The simulations give excellent reproduction of the experimentally observed nanocluster growth patterns.

The hydrophobicity of surfaces has a strong influence on their interactions with biomolecules such as proteins. Therefore, for in vitro studies of bio-surface interactions model surfaces with tailored hydrophobicity are of utmost importance. Here, we present a method for tuning the hydrophobicity of atomically flat mica surfaces by hyperthermal Ar ion irradiation. Due to the sub-100 eV energies, only negligible roughening of the surface is observed at low ion fluences and also the chemical composition of the mica crystal remains almost undisturbed. However, the ion irradiation induces the preferential removal of the outermost layer of K(+) ions from the surface, leading to the exposure of the underlying aluminosilicate sheets which feature a large number of centers for C adsorption. The irradiated surface thus exhibits an enhanced chemical reactivity toward hydrocarbons, resulting in the adsorption of a thin hydrocarbon film from the environment. Aging these surfaces under ambient conditions leads to a continuous increase of their contact angle until a fully hydrophobic surface with a contact angle >80° is obtained after a period of about 3 months. This method thus enables the fabrication of ultrasmooth biological model surfaces with precisely tailored hydrophobicity.

Variable-angle and Mueller matrix spectroscopic ellipsometry are used to determine the effective dielectric tensors of random and aligned silver nanoparticles and nanorods thin films. Randomly arranged particles are uniaxially anisotropic while aligned particles are biaxially anisotropic, with the anisotropy predominantly at the plasmonic resonances. The strong resonances in nanorod arrays result in the real part of the effective in-plane permittivities being opposite in sign over a significant range in the visible, suggesting the potential to design materials that display tunable negative-refraction. A structural tilt in the particle arrays results in monoclinic dielectric properties.

Nanopatterning of solid surfaces by low-energy ion bombardment has received considerable interest in recent years. This interest was partially motivated by promising applications of nanopatterned substrates in the production of functional surfaces. Especially nanoscale ripple patterns on Si surfaces have attracted attention both from a fundamental and an application related point of view. This paper summarizes the theoretical basics of ion-induced pattern formation and compares the predictions of various continuum models to experimental observations with special emphasis on the morphology development of Si surfaces during sub-keV ion sputtering.

We present highly ordered Ag nanowire arrays with 35nm periodicity grown on patterned templates. The optical properties measured using generalized ellipsometry exhibit strong anisotropy. Dielectric functions are calculated by fitting the Jones matrix elements with a biaxial layer model, accounting for both metallic behavior and localized surface plasmon resonances. The amplitude and wavelength maximum of the plasmon resonance perpendicular to the wires increase with increasing wire width and thickness. The dielectric coefficients of 10-mm-wide nanowires show a transition behavior from insulating in UV to metallic above 550nm. Their potential application as polarization-dependent plasmonic-scattering transparent conductive electrodes is discussed.

The morphology of different amorphous or amorphized SiO(2) surfaces, including thermally grown films, fused silica, and single crystalline quartz, during low energy ion sputtering has been investigated by means of atomic force microscopy. For all three materials, the formation of periodic ripple patterns oriented normal to the direction of the ion beam is observed at intermediate incident angles. At near-normal incidence, the SiO(2) surfaces remain flat, whereas a rotation of the ripple patterns is observed at grazing incidence. At intermediate angles, the patterns on the different surfaces exhibit wavelength coarsening of different strengths, which can be attributed to different amounts of near-surface mass transport by the surface-confined ion-enhanced viscous flow. In the framework of the recent hydrodynamic model of ion erosion, the observed differences in ripple coarsening are consistent with this interpretation and indicate that the surface energies of thermally grown SiO(2) and amorphized quartz are lower and higher than that of fused silica, respectively.

It has recently been demonstrated that the impact of individual, slow but highly charged ions on various surfaces can induce surface modifications with nanometer dimensions. Generally, the size of these surface modifications (blisters, hillocks, craters or pits) increases dramatically with the potential energy of the highly charged ion, while the kinetic energy of the projectile ions seems to be of little importance. This paper presents the currently available experimental evidence and theoretical models and discusses the circumstances and conditions under which nanosized features on different surfaces due to the impact of slow highly charged ions can be produced.

The individual impacts of slow (300 eV/amu) highly charged Xe ions induce nanometer sized pitlike structures on the KBr (001) surface. The volume of these structures shows a strong dependence on the ions potential energy. Total potential sputter yields from atomically flat (001) terraces are determined by imaging single ion impact sites. The dependence of the sputter yield on the ions initial charge state combined with structure formation at low and high-fluence irradiations indicates that agglomeration of defects into complex centers plays a major role in the desorption process induced by the potential energy.

Upon impact on a solid surface, the potential energy stored in slow highly charged ions is primarily deposited into the electronic system of the target. By decelerating the projectile ions to kinetic energies as low as 150 x q eV, we find first unambiguous experimental evidence that potential energy alone is sufficient to cause permanent nanosized hillocks on the (111) surface of a CaF(2) single crystal. Our investigations reveal a surprisingly sharp and well-defined threshold of potential energy for hillock formation which can be linked to a solid-liquid phase transition.

The amorphized surface of Si(100) sputtered with low energy ions at moderate temperature was found to develop two perpendicular ripple patterns overlaying each other. The evolution of these patterns was studied over a wide range of fluence. Coarsening of both ripple modes was observed, showing a similar time dependence with a coarsening exponent of n approximately 0.08. In the high fluence regime, the surface enters a steady state with both ripple modes still present.

We present a study of the early stage of ripple formation on Ge(001) surfaces irradiated by a 1 keV Xe(+) ion beam at room temperature and near-normal incidence. A combination of a grazing incidence x-ray scattering technique and atomic force microscopy allowed us to observe a variation of the symmetry of the surface nanopattern upon increase of the ion fluence. The isotropic dot pattern formed during the first minutes of sputtering evolves into an anisotropic ripple pattern for longer sputtering time. These results provide a new basis for further steps in the theoretical description of the morphology evolution during ion beam sputtering.

The dissipation of potential energy of multiply charged Ar ions incident on Cu has been studied by complementary electron spectroscopy and calorimetry at charge states between 2 and 10 and kinetic energies between 100 eV and 1 keV. The emitted and deposited fractions of potential energy increase at increasing charge state, showing a significant jump for charge states q>8 due to the presence of L-shell vacancies in the ion. Both fractions balance the total potential energy, thus rendering former hypotheses of a significant deficit of potential energy obsolete. The experimental data are reproduced by computer simulations based on the extended dynamic classical-over-the-barrier model.

A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.