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Interfacial structure optimization is important to enhance the thermal boundary conductance (TBC) as well as the overall performance of thermal conductive composites. In this work, the effect of interfacial roughness on the TBC between copper and diamond is investigated with molecular dynamics (MD) simulations and time-domain thermoreflectance (TDTR) experiments. It is found from MD simulations that the thermal transport efficiency across a rough interface is higher, and the TBC can be improved 5.5 times to 133 MW/m 2 ·K compared with that of the flat interface. Also, the TBC is only dominated by the actual contact area at the interface for larger roughness cases; thus, we conclude that the phonon scattering probability increases with the increase of roughness and becomes stable gradually. Finally, the TBC of the copper/diamond interface with different roughness is characterized by TDTR experiments, and the results also confirm the trend of MD simulations. This study demonstrates the feasibility of the roughness modification for interfacial thermal management from both theoretical analysis and experimental measurements and provides a new idea for enhancing the thermal conductivity of composites.

This paper investigates the bond failure performance between precast normal concrete (NC) and cast-in situ ultra-high performance concrete (UHPC), emphasizing the influence of interfacial roughness. The interfacial bonding behavior under tension and under shear was investigated based on 72 groups of pull-off tests and 36 groups of bi-shear tests, considering six different interface treatment methods and two different NC strength levels. The results demonstrate that certain interfacial roughness is essential to gain a reliable bond connection between NC and UHPC. Its enhancement on the tensile bond performance could be described by the positive linear relationship between the mean roughness and the pull-off strength. However, further research is required to determine the characterization method of its influence on the shear bond performance. The higher strength of the base concrete is beneficial to the bond performance. Though this effect is evident in the pull-off tests under tension, the influence on the shear interfacial performance could be offset by that of the interface morphology in the case with high interfacial roughness.

Contactless broadband microwave spectroscopy (a.k.a., broadband dielectric spectroscopy (BDS)) enables the accurate operando analysis of the electrical and magnetic properties without compromising the kinetic conditions of the experiment. The BDS method is sensitive to the actual electronic structure of species, and it is most relevant to redox reactions involving charge-transfer. In this paper, using BDS, we have studied and characterized the oxidation of a copper layer in a purposely built prototypical 3-D integrated circuit (3D-IC) during cycled high-temperature storage. We show that the microwave signal loss in these devices is attributable to the energy dissipation through the signal's interactions with the copper oxidation product. The results demonstrate that contactless BDS could be leveraged into an excellent metrology for applications that use metal oxide as sensing elements.

The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the three-dimensional (3D) atomic-level mapping of the roughness and uniformity of buried epitaxial interfaces in Si/SiGe superlattices with a layer thickness in the 1.5-7.5 nm range. Herein, 3D atom-by-atom maps were acquired and processed to generate isoconcentration surfaces highlighting local fluctuations in content at each interface. These generated surfaces were subsequently utilized to map the interfacial roughness and its spatial correlation length. The analysis revealed that the root-mean-squared roughness of the buried interfaces in the investigated superlattices is sensitive to the growth temperature with a value varying from 0.17 ± 0.02 to 0.26 ± 0.03 nm in the temperature range of 500-650 °C. The estimated horizontal correlation lengths were found to be 8.11 ± 0.5 nm at 650 °C and 10.09 ± 0.6 nm at 500 °C. Additionally, reducing the growth temperature was found to improve the interfacial abruptness, with a 30% smaller interfacial width is obtained at 500 °C. This behavior is attributed to the thermally activated atomic exchange at the surface during the heteroepitaxy. Finally, by testing different optical models with increasing levels of interfacial complexity, it is demonstrated that the observed atomic-level roughening at the interface must be accounted for to accurately describe the optical response of Si/SiGe heterostructures.

Diffraction in multilayers in the presence of interfacial roughness is studied theoretically, the roughness being considered as a transition layer. Exact (within the framework of the two-beam dynamical diffraction theory) differential equations for field amplitudes in a crystalline structure with varying properties along its surface normal are obtained. An iterative scheme for approximate solution of the equations is developed. The presented approach to interfacial roughness is incorporated into the recursion matrix formalism in a way that obviates possible numerical problems. Fitting of the experimental rocking curve is performed in order to test the possibility of reconstructing the roughness value from a diffraction scan. The developed algorithm works substantially faster than the traditional approach to dealing with a transition layer (dividing it into a finite number of thin lamellae). Calculations by the proposed approach are only two to three times longer than calculations for corresponding structures with ideally sharp interfaces.

Ru/C multilayer monochromators with different periodic thicknesses were investigated using X-ray grazing-incidence reflectivity, diffuse scattering, Bragg imaging, morphology testing, etc. before and after cryogenic cooling. Quantitative analyses enabled the determination of the key multilayer structural parameters for samples with different periodic thicknesses, especially the influence from the ruthenium crystallization. The results also reveal that the basic structures and reflection performance keep stable after cryogenic cooling. The low-temperature treatment smoothed the surfaces and interfaces and changed the growth characteristic to a low-frequency surface figure. This study helps with the understanding of the structure evolution of multilayer monochromators during cryogenic cooling and presents sufficient experimental proof for using cryogenically cooled multilayer monochromators in a high-thermal-load undulator beamline.