1. A novel fluorescent material K 3 NbOF 6 : Mn 4+ for light-emitting diode devices.
- Author
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Zhou H, Wang R, Mi X, and Yu X
- Abstract
A series of K
3 Nb1-x OF6 :xMn4+ fluorescent materials were prepared by the cation exchange method. Phase structure, morphology, emission, excitation spectrum and LED packaging of fluorescent materials were tested. The fluorescent material particles are micron-sized (5 μm-20 μm) and have a micro-rod morphology. It has two absorption bands, with the blue light region (∼468 nm) being stronger than the ultraviolet region (∼370 nm). Under the excitation of 468 nm, it shows good narrowband emission in the red light region, mainly with anti-stokes v6 (∼627 nm), which is caused by the double barrier of the2 Eg →4 A2g transition broken by the coupling effect of electron and phonon. The optimum doping concentration was 9.1 %, and as the concentration increased again, the dipole-dipole interaction between Mn4+ resulted in concentration quenching. When the fluorescent material operates at high temperature (150 ℃), the emission intensity drops to 50.2 % of which at room temperature. At high temperature, the electrons absorb a large amount of heat energy, and the non-radiation transition to4 A2g energy level causes the thermal quenching effect. In addition, the sample also showed good water stability, after 1 h of hydrolysis, the luminescence intensity decreased to 85.6 % of the initial value. The use of LED packaging with fluorescent materials and InGaN-YAG:Ce3+ can effectively reduce the color temperature of LED from 6856 K to 3745 K, and enhance the Color index from 61.5 % to 76.8 %. Which has great potential for development in the fields of plant growth and backlight display technology., Competing Interests: Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper., (Copyright © 2024. Published by Elsevier B.V.)- Published
- 2024
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