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Heterojunction formation is the key to adjusting the electronic and optoelectronic properties of various semiconductor devices. There have been various reports on the formation and importance of semiconducting heterojunction devices based on metal oxides. Titanium dioxide (TiO 2 ) is one of the metal oxides that has many unique properties. TiO 2 's importance is due to its physical and chemical properties such as large band gap, large permittivity, stability, and low leakage current density. In this context, we present the electrical properties of the metal-insulator-semiconductor (MIS) type-TiO 2 -based Schottky barrier diode (SBD) in the study. To create a thin layer of TiO 2 on p-type silicon ( p-type Si) patterned partially by the laser-induced periodic surface structure (LIPSS) technique, an atomic layer deposition (ALD) technique was used in the study. For comparison, the current-voltage ( I - V ) characteristics of the TiO 2 -based laser-patterned (LP) and nonlaser-patterned (non-LP) diodes were measured at 300 K and in the dark at ±5 V. Classical thermionic emission (TE) theory and Cheung functions were used to investigate the critical diode parameters of the diodes, including ideality factor ( n ), series resistance ( R s ), and barrier height (Φ b ). The n values were obtained as 4.10 and 3.68 from the TE method and Cheung functions for the LP diode, respectively. The Φ b values were found as 0.68 and 0.69 eV from the TE method and Cheung functions, respectively. According to experimental results, the laser patterning resulted in an increase in the Φ b values and a decrease in the n values. After laser patterning, it was observed that the device worked effectively, and the ideality factor and barrier height values were improved. This study provides insight into the fabrication and electrical properties of TiO 2 -based heterojunction devices., Competing Interests: The authors declare no competing financial interest., (© 2024 The Authors. Published by American Chemical Society.)

In this work, we demonstrate a single frequency, high power fiber-laser system, operating at 1550 nm, generating controllable rectangular-shape μs pulses. In order to control the amplified spontaneous emission content, and overcome the undesirable pulse steepening during the amplification, a new method with two seed sources operating at 1550 nm and 1560 nm are used in this system. The output power is about 35 W in CW mode, and the peak power is around 32 W in the pulsed mode. The repetition rate of the system is tunable between 50 Hz to 10 kHz, and the pulse duration is adjustable from 10 μs to 100 μs, with all on the fly electronically configurable design. The system demonstrates excellent long and short time stability, as well as spectral and spatial beam quality.

The range of applications of diverse graphene-based devices could be limited by insufficient surface reactivity, unsatisfied shaping, or null energy gap of graphene. Engineering the graphene structure by laser techniques can adjust the transport properties and the surface area of graphene, providing devices of different nature with a higher capacitance. Additionally, the created periodic potential and appearance of the active external/inner/edge surface centers determine the multifunctionality of the graphene surface and corresponding devices. Here, we report on the first implementation of nonlinear laser lithography (NLL) for multilayer graphene (MLG) structuring, which offers a low-cost, single-step, and high-speed nanofabrication process. The NLL relies on the employment of a high repetition rate femtosecond Yb fiber laser that provides generation of highly reproducible, robust, uniform, and periodic nanostructures over a large surface area (1 cm 2 /15 s). NLL allows one to obtain clearly predesigned patterned graphene structures without fabrication tolerances, which are caused by contacting mask contamination, polymer residuals, and direct laser exposure of the graphene layers. We represent regularly patterned MLG (p-MLG) obtained by the chemical vapor deposition method on an NLL-structured Ni foil. We also demonstrate tuning of chemical (wettability) and electro-optical (transmittance and sheet resistance) properties of p-MLG by laser power adjustments. In conclusion, we show the great promise of fabricated devices, namely, supercapacitors, and Li-ion batteries by using NLL-assisted graphene patterning. Our approach demonstrates a new avenue to pattern graphene for multifunctional device engineering in optics, photonics, and bioelectronics., Competing Interests: The authors declare no competing financial interest.

Silicon is an excellent material for microelectronics and integrated photonics1-3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e. , " in-chip" microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances.

A profoundly fundamental question at the interface between physics and biology remains open: what are the minimum requirements for emergence of complex behaviour from nonliving systems? Here, we address this question and report complex behaviour of tens to thousands of colloidal nanoparticles in a system designed to be as plain as possible: the system is driven far from equilibrium by ultrafast laser pulses that create spatiotemporal temperature gradients, inducing Marangoni flow that drags particles towards aggregation; strong Brownian motion, used as source of fluctuations, opposes aggregation. Nonlinear feedback mechanisms naturally arise between flow, aggregate and Brownian motion, allowing fast external control with minimal intervention. Consequently, complex behaviour, analogous to those seen in living organisms, emerges, whereby aggregates can self-sustain, self-regulate, self-replicate, self-heal and can be transferred from one location to another, all within seconds. Aggregates can comprise only one pattern or bifurcated patterns can coexist, compete, endure or perish.

We demonstrate an all-fiber-integrated, high-power chirped-pulse-amplification system operating at 1550 nm. The seed source is a soliton fiber laser with 156 MHz repetition rate. Two-stage single mode amplifier provides an amplification of more than 40 dB without significant spontaneous amplified emission. The power amplifier is based on cladding-pumped 10 µm-core Er-Yb co-doped fiber, the output of which was spliced into standard singlemode fiber. We obtain 10 W average power in a strictly singlemode operation. After dechirping with a grating compressor, near transform-limited, 450 fs-long pulses are obtained. The laser source exhibits excellent short and long-term intensity stability, with relative intensity noise measurements characterizing the short-term stability., (© 2012 Optical Society of America)