Search

A new growth method to make highly oriented GaAs thin films on flexible metal substrates has been developed, enabling roll-to-roll manufacturing of flexible semiconductor devices. The grains are oriented in the <001> direction with <1° misorientations between them, and they have a comparable mobility to single-crystalline GaAs at high doping concentrations. At the moment, the role of low-angle grain boundaries (LAGBs) on device performance is unknown. A series of electron backscatter diffraction (EBSD) and cathodoluminesence (CL) studies reveal that increased doping concentrations decrease the grain size and increase the LAGB misorientation. Cross-sectional scanning transmission electron microscopy (STEM) reveals the complex dislocation structures within LAGBs. Most importantly, a correlative EBSD/electron beam-induced current (EBIC) experiment reveals that LAGBs are carrier recombination centers and that the magnitude of recombination is dependent on the degree of misorientation. The presented results directly link increased LAGB misorientation to degraded device performance, and therefore, strategies to reduce LAGB misorientations and densities would improve highly oriented semiconductor devices.

An Advanced MOCVD (A-MOCVD) reactor was used to deposit 4.8 µm thick (Gd,Y)BaCuO tapes with 15 mol% Zr addition in a single pass. A record-high critical current density (J c ) of 15.11 MA/cm 2 has been measured over a bridge at 30 K, 3T, corresponding to an equivalent (I c ) value of 8705 A/12 mm width. This corresponds to a lift factor in critical current of ~11 which is the highest ever reported to the best of author's knowledge. The measured critical current densities at 3T (B||c) and 30, 40 and 50 K, respectively, are 15.11, 9.70 and 6.26 MA/cm 2 , corresponding to equivalent Ic values of 8705, 5586 and 3606 A/12 mm and engineering current densities (J e ) of 7068, 4535 and 2928 A/mm 2 . The engineering current density (J e ) at 40 K, 3T is 7 times higher than that of the commercial HTS tapes available with 7.5 mol% Zr addition. Such record-high performance in thick films (>1 µm) is a clear demonstration that growing thick REBCO films with high critical current density (J c ) is possible, contrary to the usual findings of strong J c degradation with film thickness. This achievement was possible due to a combination of strong temperature control and uniform laminar flow achieved in the A-MOCVD system, coupled with optimization of BaZrO 3 nanorod growth parameters.

A main challenge that significantly impedes REBa 2 Cu 3 O x (RE = rare earth) coated conductor applications is the low engineering critical current density J e because of the low superconductor fill factor in a complicated layered structure that is crucial for REBa 2 Cu 3 O x to carry supercurrent. Recently, we have successfully achieved engineering critical current density beyond 2.0 kA/mm 2 at 4.2 K and 16 T, by growing thick REBa 2 Cu 3 O x layer, from ∼1.0 μm up to ∼3.2 μm, as well as controlling the pinning microstructure. Such high engineering critical current density, the highest value ever observed so far, establishes the essential role of REBa 2 Cu 3 O x coated conductors for very high field magnet applications. We attribute such excellent performance to the dense c-axis self-assembled BaZrO 3 nanorods, the elimination of large misoriented grains, and the suppression of big second phase particles in this ~3.2 μm thick REBa 2 Cu 3 O x film.

Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

A new critical-current-by-design paradigm is presented. It aims at predicting the optimal defect landscape in superconductors for targeted applications by elucidating the vortex dynamics responsible for the bulk critical current. To this end, critical current measurements on commercial high-temperature superconductors are combined with large-scale time-dependent Ginzburg-Landau simulations of vortex dynamics., (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)