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Films of piezoelectric poly(vinylidene fluoride) (PVDF) and its copolymer P(VDF-TrFE) have been studied intensively for their potential application in piezoelectric sensing devices. The present work focuses on tuning the piezoelectric properties of P(VDF-TrFE) films via incorporating Ag and polydopamine co-decorated PZT (Ag@PDA@PZT) particles. Ag@PDA@PZT particles can effectively improve the β-phase content and piezoelectric properties of P(VDF-TrFE) films. The highest open-circuit voltage and short-circuit current of P(VDF-TrFE)-based flexible pressure sensors incorporating Ag@PDA@PZT particles are ~30 V and ~2.4 μA, respectively. The flexible sensors exhibit a response to different body movements, providing a practical and potentially useful basis for human-machine interface applications.

Heat-resistant two-dimensional (2D) sphere/hemisphere shell array is significant for the fabrication of novel nanostructures. Here large-area, well-ordered arrays of carbonized polystyrene (PS) hollow sphere/hemisphere with controlled size and morphology are prepared by combining the nanosphere self-assembly, kV Ag ion beam modification, and subsequent annealing or chloroform treatment. Potential mechanisms for the formation and evolution of the heat-resistant carbonized PS spherical shell with increasing ion fluence and energy are discussed. Combined with noble metal or semiconductor, these modified PS sphere arrays should open up new possibilities for high-performance nanoscale optical sensors or photoelectric devices.

Atomically thin hexagonal boron nitride (h-BN) has been demonstrated to be an excellent dielectric layer as well as an ideal van der Waals epitaxial substrate for fabrication of two-dimensional (2D) atomic layers and their vertical heterostructures. Although many groups have obtained large-scale monolayer h-BN through low pressure chemical vapor deposition (LPCVD), it is still a challenge to grow clean monolayers without the reduction of domain size. Here we report the synthesis of large-area (4 × 2 cm(2)) high quality monolayer h-BN with an ultraclean and unbroken surface on copper foil by using LPCVD. A detailed investigation of the key factors affecting growth and transfer of the monolayer was carried out in order to eliminate the adverse effects of impurity particles. Furthermore, an optimized transfer approach allowed the nondestructive and clean transfer of the monolayer from copper foil onto an arbitrary substrate, including a flexible substrate, under mild conditions. Atomic force microscopy indicated that the root-mean-square (RMS) roughness of the monolayer h-BN on SiO2 was less than 0.269 nm for areas with fewer wrinkles. Selective area electron diffraction analysis of the h-BN revealed a pattern of hexagonal diffraction spots, which unambiguously demonstrated its highly crystalline character. Our work paves the way toward the use of ultraclean and large-area monolayer h-BN as the dielectric layer in the fabrication of high performance electronic and optoelectronic devices for novel 2D atomic layer materials.