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Mode locking of a 1.34 μm vertical external cavity surface emitting laser is demonstrated using a GaSb-based semiconductor saturable absorber mirror (SESAM). The SESAM includes six AlGaSb quantum wells (QWs) with an absorption edge at ∼1.37  μm. The proposed approach has two key benefits: the QWs can be grown lattice matched, and only a small number of Bragg reflector layers is required to provide high reflectivity. Pump-probe measurements also reveal that the AlGaSb/GaSb structure exhibits an intrinsically fast absorption recovery on a picosecond timescale. The mode-locked laser pulse train had a fundamental repetition rate of 1.03 GHz, a pulse duration of ∼5  ps, and a peak power of ∼1.67  W. The demonstration paves the way for exploiting GaSb-based SESAMs for mode locking in the 1.3-2 μm wavelength range, which is not sufficiently addressed by GaAs and InP material systems.

A Tm-doped mixed sesquioxide ceramic laser is mode-locked near 2 µm using InGaAsSb quantum-well semiconductor saturable absorber and chirped mirrors for dispersion compensation. Maximum average output power of 175 mW is achieved for a pulse duration of 230 fs at a repetition rate of 78.9 MHz with a 3% output coupler. Applying a 0.2% output coupler pulses as short as 63 fs are generated at 2.057 µm.

A Holmium thin-disk laser based on a 3 at.% Ho:KY(WO 4 ) 2 / KY(WO 4 ) 2 epitaxy and single-bounce pumping by a 1960 nm Tm-fiber laser is passively Q-switched with a GaSb-based quantum-well semiconductor saturable absorber mirror. It generates an average output power of 551 mW at 2056 nm with a slope efficiency of 44% (with respect to the absorbed pump power). The best pulse characteristics (energy and duration) are 4.1 μJ / 201 ns at a repetition rate of 135 kHz and the conversion efficiency with respect to the continuous-wave regime is as high as 93%.

We report on, to the best of our knowledge, the first sub-100 fs mode-locked Ho 3+ -laser in the 2 μm spectral range employing a disordered co-doped Tm,Ho:CaYAlO 4 (Tm,Ho:CALYO) crystal as a gain medium. Pulses as short as 87 fs are produced with an average output power of 27 mW at 80.45 MHz repetition rate. An output power of 96 mW is reached for a pulse duration of 98 fs.

We present the first diode-pumped modelocked thulium (Tm 3+ ) laser based on a double-tungstate crystalline gain material. The solid-state laser consists of a Tm:KY(WO 4 ) 2 crystal as gain medium and a GaInSb/GaSb quantum well saturable absorber for self-starting passive mode locking. The laser is pumped by a multi-mode fiber-coupled laser diode at a wavelength of 793 nm. An average output power of 202 mW is achieved at a center wavelength of 2032 nm. Pulses with duration of 3 ps are generated at a repetition rate of 139.6 MHz. We also report on the first noise evaluation of a modelocked solid-state laser operating in the 2-µm wavelength range. We measured a timing jitter of sub-100 fs and a relative intensity noise of only 0.04% (frequency range from 500 Hz to 1 MHz).

Passive mode-locking of a thulium doped Lu 3 Al 5 O 12 ceramic laser is demonstrated at 2022 nm. By applying different near surface GaSb-based saturable absorber mirrors, stable self-starting mode-locked operation with pulse durations between 2 and 4 picoseconds was achieved at a repetition rate of 92 MHz. The SESAM mode-locked Tm:LuAG ceramic laser exhibits an excellent stability with a fundamental beat note extinction ratio of 80 dB above the noise level. Furthermore, spectroscopic properties of Tm:LuAG ceramics at room temperature are presented.

A passively mode-locked Ho:YAG ceramic laser around 2.1 µm is demonstrated using GaSb-based near-surface SESAM as saturable absorber. Stable and self-starting mode-locked operation is realized in the entire tuning range from 2059 to 2121 nm. The oscillator operated at 82 MHz with a maximum output power of 230 mW at 2121 nm. The shortest pulses with duration of 2.1 ps were achieved at 2064 nm. We also present spectroscopic properties of Ho:YAG ceramics at room temperature.

Passive mode-locking of a Tm,Ho:KLu(WO(4))(2) laser operating at 2060 nm using different designs of InGaAsSb quantum-well based semiconductor saturable absorber mirrors (SESAMs) is demonstrated. The self-starting mode-locked laser delivers pulse durations between 4 and 8 ps at a repetition rate of 93 MHz with maximum average output power of 155 mW. Mode-locking performance of a Tm,Ho:KLu(WO(4))(2) laser is compared for usage of a SESAM to a single-walled carbon nanotube saturable absorber.

Tunable and mode-locked laser operation near 2 µm based on different Tm-doped YAG ceramics, 4 at.% and 10 at.%, is demonstrated. Several designs of GaSb-based surface-quantum-well SESAMs are characterized and studied as saturable absorbers for mode-locking. Best mode-locking performance was achieved using an antireflection-coated near-surface quantum-well SESAM, resulting in a pulse duration of ~3 ps and ~150 mW average output power at 89 MHz. All mode-locked Tm:YAG ceramic lasers operated at 2012 nm, with over 133 nm demonstrated tuning for continuous-wave operation.

Millivolt range thermovoltage is demonstrated in single InAs nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias ΔT > 10 K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity σ between room temperature and 100 K. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.

We have investigated passive mode-locking of Tm,Ho:YAG lasers with GaInAs- and GaSb-based semiconductor saturable absorber mirrors (SESAMs). With a GaInAs-based SESAM, stable dual-wavelength mode-locking operation was achieved at 2091 nm and 2097 nm, generating pulses with duration of 56.9 ps and a maximum output power of 285 mW. By using the GaSb-based SESAMs, we could generate mode-locked pulses as short as 21.3 ps at 2091 nm with a maximum output power of 63 mW. We attribute the shorter pulse duration obtained with the GaSb SESAMs to the ultrafast recovery time of the absorption and higher nonlinearity compared to standard GaInAs SESAMs.

We report on a passively mode-locked optically pumped GaSb-based semiconductor disk laser producing stable picosecond optical pulses at a 1.95 μm wavelength. The gain mirror was comprised of a 15 quantum well InGaSb/GaSb structure. A fast semiconductor saturable absorber mirror with three InGaSb/GaSb quantum wells was used to attain self-starting mode-locked operation at a fundamental repetition rate of 881.2 MHz. The laser produced pulses with 30 pJ energy and a duration of 1.1 ps within a factor of 2 of the Fourier limit.

We report on optically-pumped vertical-external-cavity surface-emitting lasers passively mode-locked with a semiconductor saturable-absorber mirror. The potential of harmonic mode-locking in producing pulse trains at multigigahertz repetition rates has been explored. The results present first systematic study of multiple pulse formation in passively mode-locked VECSELs.

We report on power scaling of optically-pumped semiconductor disk lasers using multiple gain scheme. The method allows for significant power improvement while preserving good beam quality. Total power of over 8 W was achieved in dual-gain configuration, while one-gain lasers could produce separately about 4 W, limited by the thermal rollover of the output characteristics. The results show that reduced thermal load to a gain element in a dual-gain cavity allows extending the range of usable pump powers boosting the laser output.

Crop improvement by genetic modification remains controversial, one of the major issues being the potential for unintended effects. Comparative safety assessment includes targeted analysis of key nutrients and antinutritional factors, but broader scale-profiling or "omics" methods could increase the chances of detecting unintended effects. Comparative assessment should consider the extent of natural variation and not simply compare genetically modified (GM) lines and parental controls. In this study, potato (Solanum tuberosum) proteome diversity has been assessed using a range of diverse non-GM germplasm. In addition, a selection of GM potato lines was compared to assess the potential for unintended differences in protein profiles. Clear qualitative and quantitative differences were found in the protein patterns of the varieties and landraces examined, with 1,077 of 1,111 protein spots analyzed showing statistically significant differences. The diploid species Solanum phureja could be clearly differentiated from tetraploid (Solanum tuberosum) genotypes. Many of the proteins apparently contributing to genotype differentiation are involved in disease and defense responses, the glycolytic pathway, and sugar metabolism or protein targeting/storage. Only nine proteins out of 730 showed significant differences between GM lines and their controls. There was much less variation between GM lines and their non-GM controls compared with that found between different varieties and landraces. A number of proteins were identified by mass spectrometry and added to a potato tuber two-dimensional protein map.