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SiC x O y beaded carbon fibers were successfully fabricated for the first time using a facile and stable electrospinning and temperature process. The resulting fibers showcase a unique micro-nanocomposite structure, in which β-SiC beads with a silica-enriched surface are strung together with defect carbon fibers, as confirmed by XRD, XPS, and HRTEM investigation. The SiC x O y beaded carbon fibers display efficient microwave absorption performance, with a minimum reflection loss of -58.53 dB and an effective absorption bandwidth of 5.92 GHz. A modified Drude-Lorentz model was developed for SiC x O y beaded carbon fibers to reveal the double-peaked feature of the permittivity of these fibers, which is in good agreement with experimental measurements. Moreover, simulations were performed to extract polarized electric fields and microwave energy volume losses within a typical distribution of SiC x O y beaded carbon fibers. It is concluded that the dipole relaxation and hopping migration of localized electrons give a superior contribution to the overall decay of the microwave energy. This study indicates that SiC x O y beaded carbon fibers with a unique micro-nanocomposite structure hold great promise for microwave absorption applications. Additionally, this fabrication strategy offers a unique approach to producing micro-nanocomposite structures and highlights their potential applications.

The electromagnetic spectrum between microwave and infrared light is termed the "terahertz (THz) gap," of which there is an urgent lack of feasible and efficient room-temperature (RT) THz detectors. Type-II Weyl semimetals (WSMs) have been predicted to host significant RT topological photoresponses in low-frequency regions, especially in the THz gap, well addressing the shortcomings of THz detectors. However, such devices have not been experimentally realized yet. Herein, a type-II WSM (NbIrTe 4 ) is selected to fabricate THz detector, which exhibits a photoresponsivity of 5.7 × 10 4  V W -1 and a one-year air stability at RT. Such excellent THz-detection performance can be attributed to the topological effect of type-II WSM in which the effective mass of photogenerated electrons can be reduced by the large tilting angle of Weyl nodes to further improve mobility and photoresponsivity. Impressively, this device shows a giant intrinsic anisotropic conductance (σ max /σ min  = 339) and THz response (I ph-max /I ph-min  = 40.9), both of which are record values known. The findings open a new avenue for the realization of uncooled and highly sensitive THz detectors by exploring type-II WSM-based devices., (© 2022 Wiley-VCH GmbH.)

Maintaining the dynamical microwave synchronization between a target and its background is the key to electromagnetical invisibility in real environment. Herein, we introduce an archetypical paradigm for ultraelastic films of graphene-functionalized ionic gel with tunable microwave-absorbing behaviors. Inspired by the local structural changes during the wing-spreading process of vespertilionids, the experimental and finite element simulations have revealed that proper shape changing of 3D wrinkled structure containing ridge walls with moderate impedance is the effective way to minimize reflected wave and promote energy attenuation. An optimal RL value of -43.6 dB and valid regulatory amplitude of 41.5 dB, covering a microwave-absorbing to shielding state, could be reached with only 0.2% weight fraction of the active ingredient RGO filler. The significant regulatory performance is attributed to the competitive effect between intrinsic dielectric attenuation of silicon nitride modified reduced graphene oxide (RGO-SiN), multiscattering of a 3D wrinkled structure, and evolution of the oriented RGO-SiN.

High-performance uncooled millimetre and terahertz wave detectors are required as a building block for a wide range of applications. The state-of-the-art technologies, however, are plagued by low sensitivity, narrow spectral bandwidth, and complicated architecture. Here, we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation. By making a nanogroove array in the grown InSb layer, strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb-air interfaces, which results in significant improvement in detecting performance. A noise equivalent power (NEP) of 2.2 × 10 -14  W Hz -1/2 or a detectivity (D * ) of 2.7 × 10 12  cm Hz 1/2  W -1 at 1.75 mm (0.171 THz) is achieved at room temperature. By lowering the temperature to the thermoelectric cooling available 200 K, the corresponding NEP and D * of the nanogroove device can be improved to 3.8 × 10 -15  W Hz -1/2 and 1.6 × 10 13  cm Hz 1/2  W -1 , respectively. In addition, such a single device can perform broad spectral band detection from 0.9 mm (0.330 THz) to 9.4 mm (0.032 THz). Fast responses of 3.5 µs and 780 ns are achieved at room temperature and 200 K, respectively. Such high-performance millimetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications, walk-through security, biological diagnosis, spectroscopy, and remote sensing. In addition, the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices.

Au-hole array and Au-GeSn grating structures were designed and incorporated in GeSn metal-semiconductor-metal (MSM) photodetectors for enhanced photo detection at 2 µm. Both plasmonic structures are beneficial for effective optical confinement near the surface due to surface plasmon resonance (SPR), contributing to an enhanced responsivity. The responsivity enhancement for Au hole-array structure is insensitive to the polarization direction, while the enhancement for Au-GeSn grating structure depends on the polarization direction. The responsivity for GeSn photodetector with Au hole-array structure has ∼50% reinforcement compared with reference photodetector. On the other hand, Au-GeSn grating structure benefits a 3× enhanced responsivity of 0.455 A/W at 1.5V under TM-polarized illumination. The achieved responsivity is among the highest values for GeSn photodetectors operating at 2 µm. The plasmonic GeSn photodetectors in this work offer an alternative solution for high-efficiency photo detection, manifesting their great potentials as candidates for 2 µm optical communication and other emerging applications.

Photonic structures have been attracting more attention due to their ability to capture, concentrate and propagate optical energy. In this work, we propose a photon-trapping hole-array structure integrated in a nip InAsSb-GaSb heterostructure for the enhancement of the photoresponse in both near- and mid-infrared regions. The proposed symmetrical hole array can increase the photon lifetime inside the absorption layer and reduce reflection without polarization dependence. Significant enhancements in absorption and photoelectric conversion efficiency are demonstrated in dual bands for unpolarized incidence. The enhancement factors of responsivity at room temperature under zero-bias are 1.12 and 1.33 for the near- and mid-infrared, respectively, and they are increased to 1.71 and 1.79 when temperature drops to the thermoelectric cooling temperature of 220 K. Besides, such an integrated hole array also slightly improves working frequency bandwidth and response speed. This work provides a promising way for high-efficiency polarization-independent photoelectric conversion in different electromagnetic wave ranges.

2D noble-transition-metal chalcogenides (NTMCs) are emerging as a promising class of optoelectronic materials due to ultrahigh air stability, large bandgap tunability, and high photoresponse. Here, a new set of 2D NTMC: Ta 2 PdS 6 atomic layers is developed, displaying the excellent comprehensive optoelectronic performance with an ultrahigh photoresponsivity of 1.42 × 10 6 A W -1 , detectivity of 7.1 × 10 10 Jones and a high photoconductive gain of 2.7 × 10 6 under laser illumination at a wavelength of 633 nm with a power of 0.025 W m -2 , which is ascribed to a photogating effect via study of the device band profiles. Especially, few-layer Ta 2 PdS 6 exhibits a good broadband photoresponse, ranging from 450 nm in the ultraviolet region to 1450 nm in the shortwave infrared (SIR) region. Moreover, this material also delivers an impressive electronic performance with electron mobility of ≈25 cm 2 V -1 s -1 , I on /I off ratio of 10 6 , and a one-year air stability, which is better than those of most reported 2D materials. Our studies underscore Ta 2 PdS 6 as a promising 2D material for nano-electronic and nano-optoelectronic applications., (© 2020 Wiley-VCH GmbH.)

A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown on a 300-mm Ge-buffered Si substrate using reduced pressure chemical vapor deposition (RPCVD). GeSn/Ge MQW p-i-n photodiodes with varying mesa diameters were fabricated and characterized. An ultralow dark current density of 16.3 mA/cm 2 at -1 V was achieved as expected due to the low threading dislocation density (TDD) in pseudomorphic GeSn layer. Owing to the ultralow dark current density and high responsivity of 0.307 A/W, a high specific detectivity of 1.37×10 10 cm·Hz 1/2 /W was accomplished at 1,550 nm, which is comparable with commercial Ge and extended-InGaAs photodetectors. Meanwhile, the bias voltage-dependent photo response was investigated from 1,700 to 2,200 nm. The extracted effective absorption coefficient of GeSn/Ge MQW shows a QCSE behavior with electric field-dependent exciton peaks from 0.688 to 0.690 eV. An absorption ratio of 1.81 under -2 V was achieved at 2 μm, which shows early promise for effective optical modulation. The high frequency response was calculated theoretically, and the predicted 3-dB bandwidth for the photodiode with a mesa diameter of 30 μm could reach 12 GHz at -2 V.

Integration of photonic nanostructures with optoelectrical semiconductors offers great potential of developing high sensitivity and multifunctional photodetectors enabled by enhanced light-matter interactions. Split ring resonator (SRR) array which resonates at different resonant modes, including fundamental magnetic mode (m 0 ), high order magnetic mode (m 1 ), and electric (e) mode has been investigated because of the high potential for different applications. In this work, we study photodetection enhancement of these resonant modes of U-shape SRR arrays in the mid-infrared (2-5 μm) range and report, for the first time, the strong enhancement of photodetection by superimposition of m 1 and e modes in an integrated photodetector consisting of a U-shape SRR array and an InAsSb-based heterojunction photodiode. We observe that the m 1 mode in the SRR array shows the strongest enhancement of photocurrent, sequentially followed by the e and m 0 modes. Using superimposed m 1 and e modes, about an order of enhancement in room temperature detectivity (to about 2.0 × 10 10 Jones) is achieved under zero-power-supply without sacrificing the response speed. In addition, polarization-resolved photoresponse between m 1 and e modes and tunable enhancement of photoresponse are also demonstrated. The remarkable enhancement makes mid-infrared photodetection possible to operate at room temperature.

Metasurface with thin planar resonant elements offers great capability in manipulating electromagnetic waves and their interaction with semiconductors. Split-ring resonator (SRR), as the basic building block, has been extensively investigated for myriad applications owing to its multiple electric and magnetic resonant modes. In this work, we report a rotated fourfold U-shape SRR metasurface for polarization-insensitive strong enhancement of mid-infrared photodetection. The integrated photodetector consists of a rotated fourfold SRR array and an InAsSb based heterojunction photodiode. A photosensitivity enhancement factor as high as 11 has been achieved by adoption of superimposed high order magnetic and electric resonant modes in the SRR metasurface. This work provides a promising pathway for exploring high performance polarization-insensitive photodetection in different electromagnetic wave ranges.

The abundance and corrosion-resistant properties of aluminium, coupled with its compatibility to silicon processing make aluminium an excellent plasmonic material for light-matter interaction in the ultraviolet-visible spectrum. We investigate the interplay of the excitation and emission enhancements of quantum dots coupled with ultra-small aluminium nanoantennae with varying rotational symmetries, where emission enhancements of ∼8 and ∼6 times have been directly measured for gammadion and star-shaped structures. We observed spontaneous emission modification in the Al antenna with a C 6 symmetry and deduce a Purcell factor in the range of 68.01 < F P < 118.25 at plasmonic hotspots, corresponding to a modified quantum yield of >89% in the single antenna and near-unity quantum yield at the plasmonic hotspots. This finding brings us a step closer towards the realization of circularly polarized nanoemitters.

We present the emergence of nanobridge networks through a nanofabrication technique based on image-reversal electron beam lithography and demonstrate plasmonic structures with high aspect ratio sub-20 nm gaps capable of strong intensity enhancement in the mid-infrared range. The proposed technique, which employs the engineering of natural formations of nanobridges in predefined templates, could serve as an alternative path for realizing mid-infrared plasmonic resonators with potential applications in surface plasmon polariton-based integrated optics, and enhancement of light-matter interaction for high efficiency photodetection and nanoscale light emitters.

All-InSb film-based and spiral antenna-assisted Au-InSb-Au metal-semiconductor-metal detector is reported with dual-band photoresponse in the infrared (IR) and millimeter wave range. At IR, the detector exhibits a long wavelength 100% cut-off at 7.3 µm. Under an applied bias of 5 mA, the uncooled blackbody responsivity and specific detectivity are 3.5 A/W and 1×10 8 Jones, respectively. The f -3dB value measured at 2.94 µm is 75 KHz, corresponding to a detector rise speed of 4.7 µs. At millimeter wave range, the detector shows a narrowband response determined by the coupling of the antenna. A voltage responsivity of 25 V/W is achieved at 167 GHz (1.796 mm) under an applied bias of 25 mA, and the corresponding noise equivalent power (NEP) is 1.0×10 -10 WHz -1/2 , which can be improved to 1.8×10 -12 WHz -1/2 if normalized to the real active semiconductor area. A f -3dB value of 17.5 KHz, corresponding to a detector rise speed of 20 µs is achieved in this range. A proof of principle for IR-modulated photoresponse for millimeter wave is achieved with a maximum modulation depth of 47.5%. This All-InSb film-based detector and the modulation are promising for future novel optoelectronic devices in IR and millimeter waves.

The implementation of polarization controlling components enables additional functionalities of short-wave infrared (SWIR) imagers. The high-performance and mass-producible polarization controller based on Si metasurface is in high demand for the next-generation SWIR imaging system. In this work, we report the first demonstration of all-Si metasurface based polarizing bandpass filters (PBFs) on 12-inch wafers. The PBF achieves a polarization extinction ratio of above 10 dB in power within the passbands. Using the complementary metal-oxide-semiconductor (CMOS) compatible 193nm ArF deep ultra-violet (DUV) immersion lithography and inductively coupled plasma (ICP) etch processing line, a device yield of 82% is achieved.

Surface plasmon polaritons (SPPs) have been attracting tremendous attention in application of enhanced optoelectronic devices owing to their capability of localizing electromagnetic waves in deep subwavelength scale. We propose a plasmonic mid-infrared InAsSb-based n-i-p photodiode with electrically-controlled photocurrent enhancement achieved by controlling the overlap between SPP depth and the absorption layer, from which maximum electrically controlled enhancement factors of ~5x and ~6x have been achieved for room temperature (293 K) and 77 K operation, respectively, corresponding to electrical tuning factors of 11.9 and 26. The maximum detectivities obtained at the two temperatures are 0.8 × 10 10 Jones and 5 × 10 11 Jones, respectively. This electrically controlled enhancement expands the application capability of plasmonic photodiodes.

Dual-band photodetection in mid- and near-wave infrared spectral bands is of scientific interest and technological importance. Most of the state-of-the-art mid-infrared photodetectors normally operate at low temperature and/or suffer from toxicity and high cost due to limitations of material properties and device structures. The capability of surface plasmons in confining electromagnetic waves into extremely small volume provides an opportunity for improving the performance for room temperature operation. Here, we report an n-InAsSb/n-GaSb heterostructure photodiode integrated with plasmonic two-dimensional subwavelength hole array (2DSHA) for room temperature two band photodetection. We demonstrate that with a properly designed 2DSHA, room temperature detectivities of the heterostructure device can be enhanced to ~1.4 × 10 9 Jones and ~1.5 × 10 11 Jones for the two bands peaked at 3.4 μm and 1.7 μm, respectively. In addition, we study the photocurrent enhancement in both photoconductor and heterojunction modes in the same integrated structure. The demonstration of single 2DSHA enhanced heterojunction photodiode brings a step closer to high sensitivity room temperature devices and systems which require multiband absorption.

Millimeter and terahertz wave photodetectors have long been of great interest due to a wide range of applications, but they still face challenges in detection performance. Here, we propose a new strategy for the direct detection of millimeter and terahertz wave photons based on localized surface-plasmon-polariton (SPP)-induced non-equilibrium electrons in antenna-assisted subwavelength ohmic metal-semiconductor-metal (OMSM) structures. The subwavelength OMSM structure is used to convert the absorbed photons into localized SPPs, which then induce non-equilibrium electrons in the structure, while the antenna increases the number of photons coupled into the OMSM structure. When the structure is biased and illuminated, the unidirectional flow of the SPP-induced non-equilibrium electrons forms a photocurrent. The energy of the detected photons is determined by the structure rather than the band gap of the semiconductor. The detection scheme is confirmed by simulation and experimental results from the devices, made of gold and InSb, and a room temperature noise equivalent power (NEP) of 1.5 × 10 -13 W Hz -1/2 is achieved.

Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal-semiconductor-metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

We report aluminum based structures for manipulation of surface plasmon polariton (SPP) propagation at short wavelength range. Our simulation shows that aluminum is a good metal to excite and propagate SPPs with blue light and that the SPP wavelength can be reduced from about 465 nm to about 265 nm by monitoring the thickness of a coated Si(3)N(4) layer above the aluminum film. It is also shown that the damping becomes more significant with the increase of the thickness of the Si(3)N(4) layer. We also experimentally demonstrated the SPP wavelength tuning effect for 20nm Si(3)N(4) layer covered Al, which can be explained by the variation of effective permittivity. The proposed Metal-Insulator-Air (MIA) structures with SPP wavelength tuning ability have potential applications in 2D optics.

A concept to stimulate photoconductivity in a semiconductor well below its bandgap in a metal-semiconductor-metal structure with sub-wavelength spacing is proposed. A potential well is induced in the semiconductor by external electromagnetic radiation to trap carriers from the metals. This opens an avenue to generate carriers by photons without adequate excitation energy and is expected to have great significance in modern materials., (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)