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The hyperbolic materials are strongly anisotropic media with a permittivity/permeability tensor having diagonal components of different sign. They combine the properties of dielectric and metal-like media and are described with hyperbolic isofrequency surfaces in wave-vector space. Such media may support unusual effects like negative refraction, near-field radiation enhancement and nanoscale light confinement. They were demonstrated mainly for microwave and infrared frequency ranges on the basis of metamaterials and natural anisotropic materials correspondingly. For the terahertz region, the tunable hyperbolic media were demonstrated only theoretically. This paper is dedicated to the first experimental demonstration of an optically tunable terahertz hyperbolic medium in 0.2-1.0 THz frequency range. The negative phase shift of a THz wave transmitted through the structure consisting of 40 nm (in relation to THz wave transmitted through substrate) to 120 nm bismuth film (in relation to both THz waves transmitted through substrate and air) on 21 µm mica substrate is shown. The optical switching of topological transition between elliptic and hyperbolic isofrequency contours is demonstrated for the effective structure consisting of 40 nm Bi on mica. For the case of 120 nm Bi on mica, the effective permittivity is only hyperbolic in the studied range. It is shown that the in-plane component of the effective permittivity tensor may be positive or negative depending on the frequency of THz radiation and continuous-wave optical pumping power (with a wavelength of 980 nm), while the orthogonal one is always positive. The proposed optically tunable structure may be useful for application in various fields of the modern terahertz photonics.

We report on the production of 200 and 600 nm thick Bi films on mica substrate with 10 nm thick Sb sublayer between Bi and mica. Two types of films have been studied: block and single crystal. Films were obtained using the thermal evaporation technique using continuous and discrete spraying. Discrete spraying allows smaller film blocks size: 2-6 μ m compared to 10-30 μ m, obtained by the continuous spraying. Single crystal films were made by the zone recrystallization method. Microscopic examination of Bi films with and without Sb sublayer did not reveal an essential distinction in crystal structure. A galvanomagnetic study shows that Sb sublayer results in the change of Bi films properties. Sb sublayer results in the increase of specific resistivity of block films and has no significant impact on single crystal films. For single-crystal films with Sb sublayer with a thickness of 200 nm the Hall coefficient has value 1.5 times higher than for the 600 nm thickness films at 77 K. The change of the Hall coefficient points to change of the contribution of carriers in the conductivity. This fact indicates a change in the energy band structure of the thin Bi film. The most significant impact of the Sb sublayer is on the magnetoresistance of single-crystal films at low temperatures. The increase of magnetoresistance points to the increase of mobility of the charge carriers. In case of detecting and sensing applications the increased carriers mobility can result in a faster device response time.

We report a numerical study of the field assisted sintering of silicon germanium alloys by a finite element method, which takes into account contact resistances, thermal expansion and the thermoelectric effect. The distribution of electrical and thermal fields was analyzed numerically, based on the experimental data collected from spark plasma sintering (SPS) apparatus. The thermoelectric properties of Si-Ge used within the simulation were considered as the function of density and the sintering temperature. Quantitative estimation of the temperature distribution during the sintering pointed to a significant, up to 60 °C, temperature difference within the specimen volume for the case of the sintering temperature at 1150 °C.