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In metallic transition metal dichalcogenides (TMDs), which remain superconducting down to single-layer thickness, the critical temperature T c decreases for Nb-based, and increases for Ta-based materials. This contradicting trend is puzzling, impeding the development of a unified theory. Here we study the thickness-evolution of superconducting tunneling spectra in TaS 2  heterostructures. The upper critical field H c2 is strongly enhanced towards the single-layer limit - following H c 2 ∝ T c 2 . The same ratio holds for the entire family of intrinsically metallic 2H-TMDs, covering 4 orders of magnitude in H c2 . Using Gor'kov's theory, we calculate the suppression of T c by the competing charge density wave (CDW) order, which affects the quasiparticle density of states and the resulting T c and H c2 . The latter is found to be universally enhanced by two orders of magnitude. Our results substantiate CDW as the key determinant factor limiting T c across the TMD family., Competing Interests: Competing interests: The authors declare no competing interests., (© 2024. The Author(s).)

The utilization of photoelectrochemical cells (PEC) for converting solar energy into fuels (e.g., hydrogen) is a promising method for sustainable energy generation. We demonstrate a strategy to enhance the performance of PEC devices by integrating surface-functionalized zinc selenide (ZnSe) semiconductor nanocrystals (NCs) into porous polymeric carbon nitride (CN) matrices to form a uniformly distributed blend of NCs within the CN layer via electrophoretic deposition (EPD). The achieved type II heterojunction at the CN/NC interface exhibits intimate contact between the NCs and the CN backbone since it does not contain insulating binders. This configuration promotes efficient charge separation and suppresses carrier recombination. The reported CN/NC composite structure serves as a photoanode, demonstrating a photocurrent density of 160 ± 8 μA cm -2 at 1.23 V vs a reversible hydrogen electrode (RHE), 75% higher compared with a CN-based photoelectrode, for approximately 12 h. Spectral and photoelectrochemical analyses reveal extended photoresponse, reduced charge recombination, and successful charge transfer at the formed heterojunction; these properties result in enhanced PEC oxygen production activity with a Faradaic efficiency of 87%. The methodology allows the integration of high-quality colloidal NCs within porous CN-based photoelectrodes and provides numerous knobs for tuning the functionality of the composite systems, thus showing promise for achieving enhanced solar fuel production using PEC.

A unique on-chip method for the direct correlation of optical properties, with atomic-scale chemical-structural characteristics for a single quantum dot (QD), is developed and utilized in various examples. This is based on performing single QD optical characterization on a modified glass substrate, followed by the extraction of the relevant region of interest by focused-ion-beam-scanning electron microscope processing into a lamella for high resolution scanning transmission electron microscopy (STEM) characterization with atomic scale resolution. The direct correlation of the optical response under an electric field with STEM analysis of the same particle allows addressing several single particle phenomena: first, the direct correlation of single QD photoluminescence (PL) polarization and its response to the external field with the QD crystal lattice alignment, so far inferred indirectly; second, the identification of unique yet rare few-QD assemblies, correlated directly with their special spectroscopic optical characteristics, serving as a guide for future designed assemblies; and third, the study on the effect of metal island growth on the PL behavior of hybrid semiconductor-metal nanoparticles, with relevance for their possible functionality in photocatalysis. This work, therefore, establishes the use of the direct on-chip optical-structural correlation method for numerous scenarios and timely questions in the field of QD research., (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)

Colloidal semiconductor quantum dots are robust emitters implemented in numerous prototype and commercial optoelectronic devices. However, active fluorescence colour tuning, achieved so far by electric-field-induced Stark effect, has been limited to a small spectral range, and accompanied by intensity reduction due to the electron-hole charge separation effect. Utilizing quantum dot molecules that manifest two coupled emission centres, we present a unique electric-field-induced instantaneous colour-switching effect. Reversible emission colour switching without intensity loss is achieved on a single-particle level, as corroborated by correlated electron microscopy imaging. Simulations establish that this is due to the electron wavefunction toggling between the two centres, induced by the electric field, and affected by the coupling strength. Quantum dot molecules manifesting two coupled emission centres may be tailored to emit distinct colours, opening the path for sensitive field sensing and colour-switchable devices such as a novel pixel design for displays or an electric-field-induced colour-tunable single-photon source., (© 2023. The Author(s), under exclusive licence to Springer Nature Limited.)

The synthesis of two-dimensional van der Waals magnets has paved the way for both technological applications and fundamental research on magnetism confined to ultra-small length scales. Edge magnetic moments in ferromagnets are expected to be less magnetized than in the sample interior because of the reduced amount of neighboring ferromagnetic spins at the sample edge. We recently demonstrated that CrGeTe 3 (CGT) flakes thinner than 10 nm are hard ferromagnets; i.e., they exhibit an open hysteresis loop. In contrast, thicker flakes exhibit zero net remnant field in the interior, with hard ferromagnetism present only at the cleaved edges. This experimental observation suggests that a nontrivial interaction exists between the sample edge and the interior. Here, we demonstrate that artificial edges fabricated by focus ion beam etching also display hard ferromagnetism. This enables us to write magnetic nanowires in CGT directly and use this method to characterize the magnetic interaction between the interior and edge. The results indicate that the interior saturation and depolarization fields depend on the lateral dimensions of the sample. Most notably, the interior region between the edges of a sample narrower than 300 nm becomes a hard ferromagnet, suggesting an enhancement of the magnetic exchange induced by the proximity of the edges. Last, we find that the CGT regions amorphized by the gallium beam are nonmagnetic, which introduces a novel method to tune the local magnetic properties of CGT films, potentially enabling integration into spintronic devices., Competing Interests: The authors declare no competing financial interest., (© 2023 The Authors. Published by American Chemical Society.)

CrGeTe 3 (CGT) is a semiconducting vdW ferromagnet shown to possess magnetism down to a two-layer thick sample. Although CGT is one of the leading candidates for spintronics devices, a comprehensive analysis of CGT thickness dependent magnetization is currently lacking. In this work, we employ scanning SQUID-on-tip (SOT) microscopy to resolve the magnetic properties of exfoliated CGT flakes at 4.2 K. Combining transport measurements of CGT/NbSe 2 samples with SOT images, we present the magnetic texture and hysteretic magnetism of CGT, thereby matching the global behavior of CGT to the domain structure extracted from local SOT magnetic imaging. Using this method, we provide a thickness dependent magnetization state diagram of bare CGT films. No zero-field magnetic memory was found for films thicker than 10 nm, and hard ferromagnetism was found below that critical thickness. Using scanning SOT microscopy, we identify a unique edge magnetism, contrasting the results attained in the CGT interior.

Focused Ion Beam (FIB) is one of the most common methods for nanodevice fabrication. However, its implications on mechanical properties of polymers have only been speculated. In the current study, we demonstrated flexural bending of FIB-milled epoxy nanobeam, examined in situ under a transmission electron microscope (TEM). Controllable displacement was applied, while real-time TEM videos were gathered to produce morphological data. EDS and EELS were used to characterize the compositions of the resultant structure, and a computational model was used, together with the quantitative results of the in situ bending, to mechanically characterize the effect of Ga + ions irradiation. The damaged layer was measured at 30 nm, with high content of gallium (40%). Examination of the fracture revealed crack propagation within the elastic region and rapid crack growth up to fracture, attesting to enhanced brittleness. Importantly, the nanoscale epoxy exhibited a robust increase in flexural strength, associated with chemical tempering and ion-induced peening effects, stiffening the outer surface. Young's modulus of the stiffened layer was calculated via the finite element analysis (FEA) simulation, according to the measurement of 30 nm thickness in the STEM and resulted in a modulus range of 30-100 GPa. The current findings, now established in direct measurements, pave the way to improved applications of polymers in nanoscale devices to include soft materials, such as polymer-based composites and biological samples.