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SnGe 4 N 4 O 4 was synthesized at high pressure (16 and 20 GPa) and high temperature (1200 and 1500°C) in a large-volume press. Powder X-ray diffraction experiments using synchrotron radiation indicate that the derived samples are mixtures of known and unknown phases. However, the powder X-ray diffraction patterns are not sufficient for structural characterization. Transmission electron microscopy studies reveal crystals of several hundreds of nanometres in size with different chemical composition. Among them, crystals of a previously unknown phase with stoichiometry SnGe 4 N 4 O 4 were detected and investigated using automated diffraction tomography (ADT), a three-dimensional electron diffraction method. Via ADT, the crystal structure could be determined from single nanocrystals in space group P6 3 mc, exhibiting a nolanite-type structure. This was confirmed by density functional theory calculations and atomic resolution scanning transmission electron microscopy images. In one of the syntheses runs a rhombohedral 6R polytype of SnGe 4 N 4 O 4 could be found together with the nolanite-type SnGe 4 N 4 O 4 . The structure of this polymorph was solved as well using ADT., (open access.)

Here we report on the discovery of a ternary silicon titanium nitride with the general composition (Si 1-x ,Ti x ) 3 N 4 with x = 0 < x < 1 and spinel-type crystal structure. The novel nitride is formed from an amorphous silicon titanium nitride (SiTiN) precursor under high-pressure/high-temperature conditions in a large volume high-pressure device. Under the conditions of 15-20 GPa and 1800-2000 °C, spinel-type γ-Si 3 N 4 and rock salt-type c-TiN are formed. In addition, crystals of the discovered nano-sized ternary phase (Si 1-x ,Ti x ) 3 N 4 embedded in γ-Si 3 N 4 are identified. The ternary compound is formed due to kinetically-controlled synthesis conditions and is analyzed to exhibit the spinel-type structure with ca. 8 atom% of Ti. The Ti atoms occur in both Ti 3+ and Ti 4+ oxidation states and are located on the Si sites. The ternary nano-crystals have to be described as (Si,Ti) 3 N 4 with N-vacancies resulting in the general composition (Si 4+ 1-x Ti 4+ x-δ Ti 3+ δ ) 3 N 4-δ .

We report the first oxynitride of tin, Sn 2 N 2 O (SNO), exhibiting a Rh 2 S 3 -type crystal structure with space group Pbcn. All Sn atoms are in six-fold coordination, in contrast to Si in silicon oxynitride (Si 2 N 2 O) and Ge in the isostructural germanium oxynitride (Ge 2 N 2 O), which appear in four-fold coordination. SNO was synthesized at 20 GPa and 1200-1500 °C in a large volume press. The recovered samples were characterized by synchrotron powder X-ray diffraction and single-crystal electron diffraction in the TEM using the automated diffraction tomography (ADT) technique. The isothermal bulk modulus was determined as B o =193(5) GPa by using in-situ synchrotron X-ray diffraction in a diamond anvil cell. The structure model is supported by DFT calculations. The enthalpy of formation, the bulk modulus, and the band structure have been calculated., (© 2019 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.)

The high-pressure behavior of KIO(3) was studied up to 30 GPa using single crystal and powder x-ray diffraction, Raman spectroscopy, second harmonic generation (SHG) experiments and density functional theory (DFT)-based calculations. Triclinic KIO(3) shows two pressure-induced structural phase transitions at 7 GPa and at 14 GPa. Single crystal x-ray diffraction at 8.7(1) GPa was employed to solve the structure of the first high-pressure phase (space group R3, a = 5.89(1) Å, α = 62.4(1)°). The bulk modulus, B, of this phase was obtained by fitting a second order Birch-Murnaghan equation of state (eos) to synchrotron x-ray powder diffraction data resulting in B(exp,second) = 67(3) GPa. The DFT model gave B(DFT,second) = 70.9 GPa, and, for a third order Birch-Murnaghan eos, B(DFT,third) = 67.9 GPa with a pressure derivative of [Formula: see text]. Both high-pressure transformations were detectable by Raman spectroscopy and the observation of second harmonic signals. The presence of strong SHG signals shows that all high-pressure phases are acentric. By using different pressure media, we showed that the transition pressures are very strongly influenced by shear stresses. Earlier work on low- and high-temperature transitions was complemented by low-temperature heat capacity measurements. We found no evidence for the presence of an orientational glass, in contrast to earlier dielectric studies, but consistent with earlier low-temperature diffraction studies.

The high-pressure behaviour of Bi2Fe4O9 was analysed by in situ powder and single-crystal x-ray diffraction and Raman spectroscopy. Pressures up to 34.3(8) GPa were generated using the diamond anvil cell technique. A reversible phase transition is observed at approximately 6.89(6) GPa and the high-pressure structure is stable up to 26.3(1) GPa. At higher pressures the onset of amorphization is observed. The crystal structures were refined from single-crystal data at ambient pressure and pressures of 4.49(2), 6.46(2), 7.26(2) and 9.4(1) GPa. The high-pressure structure is isotypic to the high-pressure structure of Bi2Ga4O9. The lower phase transition pressure of Bi2Fe4O9 with respect to that of Bi2Ga4O9 (16 GPa) confirms the previously proposed strong influence of cation substitution on the high-pressure stability and the misfit of Ga3+ and Fe3+ in tetrahedral coordination at high pressure. A fit of a second-order Birch–Murnaghan equation of state to the p–V data results in K0 = 74(3) GPa for the low-pressure phase and K0 = 79(2) GPa for the high-pressure phase. The mode Grüneisen parameters were obtained from Raman-spectroscopic measurements.

The crystal structure of the bismuth silicon oxide Bi(12)SiO(20) was determined by single-crystal x-ray diffraction at ambient conditions and at high pressure. Single-crystal intensity data between 0.0001 and 16.8(3) GPa were collected in house with Mo Kα radiation and with synchrotron radiation (λ = 0.45 Å) at HASYLAB (D3), while lattice parameters were measured up to 23.0(3) GPa. The large cavities which exist in the crystal structure and host the lone electron pairs of the Bi(3 + ) ions are considerably compressed at high pressure. The crystal structure, however, remains stable and the lone electron pair is stereochemically active up to at least 16.8 GPa. A larger compression in the direction of the lone electron pairs by shear deformation was not observed. Raman spectra of Bi(12)SiO(20) were measured on powder samples during pressure decrease from 39.1(1) GPa down to ambient pressure and on single crystals during pressure increase up to 12.50(3) GPa. Density functional perturbation theory was used to compute Raman frequencies and intensities at ambient pressure and to investigate pressure-induced changes up to 50 GPa.

Single-crystal X-ray diffraction has shown that the high-critical-temperature (T(c)) phase of the filamentary molecular superconductor (BEDT-TTF)(2)Ag(CF(3))(4)(1,1,2-trichloroethane) [BEDT-TTF = bis(ethylenedithio)tetrathiafulvalene] contains layers of BEDT-TTF radical cations with alternating κ- and α'-type packing motifs. This molecule-based superconductor with dual BEDT-TTF packing motifs has a T(c) five times higher than that of its polymorph that contains only κ-type packing.

The crystal structure of the high-pressure phase of bismuth gallium oxide, Bi(2)Ga(4)O(9), was determined up to 30.5 (5) GPa from in situ single-crystal in-house and synchrotron X-ray diffraction. Structures were refined at ambient conditions and at pressures of 3.3 (2), 6.2 (3), 8.9 (1) and 14.9 (3) GPa for the low-pressure phase, and at 21.4 (5) and 30.5 (5) GPa for the high-pressure phase. The mode-Grüneisen parameters for the Raman modes of the low-pressure structure and the changes of the modes induced by the phase transition were obtained from Raman spectroscopic measurements. Complementary quantum-mechanical calculations based on density-functional theory were performed between 0 and 50 GPa. The phase transition is driven by a large spontaneous displacement of one O atom from a fully constrained position. The density-functional theory (DFT) model confirmed the persistence of the stereochemical activity of the lone electron pair up to at least 50 GPa in accordance with the crystal structure of the high-pressure phase. While the stereochemical activity of the lone electron pair of Bi(3+) is reduced at increasing pressure, a symmetrization of the bismuth coordination was not observed in this pressure range. This shows an unexpected stability of the localization of the lone electron pair and of its stereochemical activity at high pressure.

We present structural and magnetic data of a new Cu(2+)(S = 1/2)-containing magnetic trimer system 2b·3CuCl(2)·2H(2)O (b = betaine, C(5)H(11)NO(2)). The trimers form a quasi-2D quantum spin system with an unusual intra-layer exchange coupling topology, which, in principle, supports diagonal four-spin exchange. To describe the magnetic properties, a 2D effective interacting-trimer model has been developed including an intra-trimer coupling J and two inter-trimer couplings J(a) and J(b). The low-energy description and effective parameters are obtained from numerical calculations based on four coupled trimers (with periodic boundary conditions). Fits to the experimental data using this model yield the magnetic coupling constants J/k(B) = -15 K and J(a)/k(B) = J(b)/k(B) = -4 K. These parameters describe the susceptibility and magnetization data very well over the whole temperature and field range investigated. Moreover, the model calculations indicate that, for certain ranges of the ratio J(b)/J(a), which might be accessible by either chemical substitution and/or hydrostatic pressure, the low-energy properties of 2b·3CuCl(2)·2H(2)O will be dominated by non-trivial four-spin exchange processes.