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In this work, electrical and optical performances for 250 nm AlGaN-based flip-chip deep ultraviolet light emitting diodes (DUV LEDs) with different chip sizes are studied. Reduced chip size helps increase the light extraction efficiency (LEE) with the cost of increased surface nonradiative recombination. Nevertheless, a thin p-Al 0.67-0 Ga 0.33-1 N layer of 10 nm can manage current distribution while suppressing surface recombination and reducing light absorption simultaneously, which results in the increased optical power density. Thanks to the better current management and reduced optical self-absorption effect, the reduced Joule heating effect suppresses the thermal droop of the optical power density for a small DUV LED chip. We also find that the p-Al 0.67-0 Ga 0.33-1 N layer thickness shows very significant impact on device resistance especially for the small DUV LED chip, such that the device resistance has a remarkable increase when the p-Al 0.67-0 Ga 0.33-1 N layer is thickened to 100 nm.

In this Letter, an omni-directional reflector (ODR) with a thin hybrid dielectric layer (hybrid-ODR) is proposed to enhance the light extraction efficiency (LEE) for inclined-sidewall-shaped AlGaN-based deep ultraviolet light-emitting diode (DUV LED) by inserting a thin diamond with high refraction index into a conventional Al/Al 2 O 3 -based ODR. The three-dimensional finite-difference time-domain (3D FDTD) simulation results show that the LEE of TM-polarized light for the DUV LED with hybrid-ODR is enhanced by 18.5% compared with Al/Al 2 O 3 -based ODR. It is because the diamond can transform the evanescent wave in Al 2 O 3 into the propagating light wave in diamond, thereby preventing effective excitation of the surface plasmon polariton (SPP) on the surface of the metal Al. Moreover, the Brewster's angle effect causes the TM-polarized light in diamond to propagate effectively into AlGaN. Furthermore, decreasing the total thickness of the dielectric layer also improves the scattering effect of the inclined sidewall. However, the utilization of hybrid-ODR results in a slight reduction in the LEE for transverse electric (TE) polarized light because the light is confined to the diamond layer and eventually absorbed by the metal Al.

It is known that light extraction efficiency (LEE) for AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) can be enhanced by using an inclined sidewall of mesa. However, the reported optimal inclined angles are different. In this work, to explore the origin for enhancing the LEE of DUV LED by using inclined sidewalls, we investigate the effect of an inclined sidewall angle on the LEE for AlGaN-based DUV LEDs with different mesa diameters by using ray tracing. It is found that when compared to large-size DUV LEDs with inclined sidewall, the LEE of small-size DUV LEDs with inclined sidewall is enhanced from both the bottom and side surfaces due to the reduced scattering length and material absorption. Additionally, the optimal inclined sidewall angle is recommended within the range of 25°-65°, and the optimal angle for DUV LEDs decreases as the chip size increases. It can be attributed to the fact that there are two scattering mechanisms for the inclined sidewall. For smaller chip sizes, most of the light is directly scattered into escape cones by the inclined sidewall, resulting in a larger optimal angle. For larger chip sizes, the light firstly experiences total internal reflections by the out-light plane and then is scattered into escape cones by the inclined sidewalls, leading to a smaller optimal angle.

In this work, we hybridize an air cavity reflector and a nanopatterned sapphire substrate (NPSS) for making an inclined-sidewall-shaped deep ultraviolet micro light-emitting diode (DUV micro-LED) array to enhance the light extraction efficiency (LEE). A cost-effective hybrid photolithography process involving positive and negative photoresist (PR) is explored to fabricate air-cavity reflectors. The experimental results demonstrate a 9.88% increase in the optical power for the DUV micro-LED array with a bottom air-cavity reflector when compared with the conventional DUV micro-LED array with only a sidewall metal reflector. The bottom air-cavity reflector significantly contributes to the reduction of the light absorption and provides more escape paths for light, which in turn increases the LEE. Our investigations also report that such a designed air-cavity reflector exhibits a more pronounced impact on small-size micro-LED arrays, because more photons can propagate into escape cones by experiencing fewer scattering events from the air-cavity structure. Furthermore, the NPSS can enlarge the escape cone and serve as scattering centers to eliminate the waveguiding effect, which further enables the improved LEE for the DUV micro-LED array with an air-cavity reflector.

DExD/H-box helicases are crucial regulators of RNA metabolism and antiviral innate immune responses; however, their role in bacteria-induced inflammation remains unclear. Here, we report that DDX5 interacts with METTL3 and METTL14 to form an m6A writing complex, which adds N6-methyladenosine to transcripts of toll-like receptor (TLR) 2 and TLR4, promoting their decay via YTHDF2-mediated RNA degradation, resulting in reduced expression of TLR2/4. Upon bacterial infection, DDX5 is recruited to Hrd1 at the endoplasmic reticulum in an MyD88-dependent manner and is degraded by the ubiquitin-proteasome pathway. This process disrupts the DDX5 m6A writing complex and halts m6A modification as well as degradation of TLR2/4 mRNAs, thereby promoting the expression of TLR2 and TLR4 and downstream NF-κB activation. The role of DDX5 in regulating inflammation is also validated in vivo, as DDX5- and METTL3-KO mice exhibit enhanced expression of inflammatory cytokines. Our findings show that DDX5 acts as a molecular switch to regulate inflammation during bacterial infection and shed light on mechanisms of quiescent inflammation during homeostasis., (© 2024. The Author(s).)

In this Letter, beveled mesas for 30 × 30 µm 2 GaN-based micro-light-emitting diodes (µLEDs) with different inclination angles are designed, fabricated, and measured. We find that µLED with a mesa inclination angle of 28° has the lowest internal quantum efficiency (IQE) and the highest injection current density at which the peak IQE is obtained. This is due to the increased quantum confined Stark effect (QCSE) at the mesa edge. The increased QCSE results from the strong electric field coupling effect. Instead of radiative recombination, more nonradiative recombination and leakage current will be generated in the sidewall regions. Besides, the smallest angle (28°) also produces the lowest light extraction efficiency (LEE), which arises from the optical loss caused by the sidewall reflection at the beveled surface sides. Therefore, the inclination angle for the beveled mesa has to be increased to 52° and 61° by using Ni and SiO 2 as hard masks, respectively. Experimental and numerical results show that the external quantum efficiency (EQE) and the optical power can be enhanced for the fabricated devices. Meanwhile, the reduced surface recombination rate also decreases the leakage current.

Paeonol (PAE) is a natural phenolic monomer isolated from the root bark of Paeonia suffruticosa that has been widely used in the clinical treatment of some inflammatory-related diseases and cardiovascular diseases. Much preclinical evidence has demonstrated that PAE not only exhibits a broad spectrum of anticancer effects by inhibiting cell proliferation, invasion and migration and inducing cell apoptosis and cycle arrest through multiple molecular pathways, but also shows excellent performance in improving cancer drug sensitivity, reversing chemoresistance and reducing the toxic side effects of anticancer drugs. However, studies indicate that PAE has the characteristics of poor stability, low bioavailability and short half-life, which makes the effective dose of PAE in many cancers usually high and greatly limits its clinical translation. Fortunately, nanomaterials and derivatives are being developed to ameliorate PAE's shortcomings. This review aims to systematically cover the anticancer advances of PAE in pharmacology, pharmacokinetics, nano delivery systems and derivatives, to provide researchers with the latest and comprehensive information, and to point out the limitations of current studies and areas that need to be strengthened in future studies. We believe this work will be beneficial for further exploration and repurposing of this natural compound as a new clinical anticancer drug., Competing Interests: Declaration of Competing Interest The authors declare that there are no conflicts of interest., (Copyright © 2023 The Authors. Published by Elsevier Masson SAS.. All rights reserved.)

GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and distinctive advantages for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, fewer self-heating effects, and higher current density bearing capacity. Low external quantum efficiency (EQE) resulting from non-radiative recombination and quantum confined stark effect (QCSE) is a serious barrier for application of µLEDs. In this work, the reasons for the poor EQE of µLEDs are reviewed, as are the optimization techniques for improving the EQE of µLEDs.

In this paper, by using advanced numerical models, we investigate the impact of the AlN/GaN distributed Bragg reflector (DBR) and AlInN/GaN DBR on stimulated radiative recombination for GaN-based vertical-cavity-surface-emitting lasers (VCSELs). According to our results, when compared with the VCSEL with AlN/GaN DBR, we find that the VCSEL with AlInN/GaN DBR decreases the polarization-induced electric field in the active region, and this helps to increase the electron-hole radiative recombination. However, we also find that the AlInN/GaN DBR has a reduced reflectivity when compared with the AlN/GaN DBR with the same number of pairs. Furthermore, this paper suggests that more pairs of AlInN/GaN DBR will be set, which helps to even further increase the laser power. Hence, the 3 dB frequency can be increased for the proposed device. In spite of the increased laser power, the smaller thermal conductivity for AlInN than AlN results in the earlier thermal droop in the laser power for the proposed VCSEL.

With increasing Al mole fraction, n-contact has become an important issue limiting the development of Al-rich AlGaN-based devices. In this work, we have proposed an alternative strategy to optimize the metal/n-AlGaN contact by introducing a heterostructure with a polarization effect and by etching a recess structure through the heterostructure beneath the n-contact metal. Experimentally, we inserted an n-Al 0.6 Ga 0.4 N layer into an Al 0.5 Ga 0.5 N p-n diode on the n-Al 0.5 Ga 0.5 N layer to form a heterostructure, where a high interface electron concentration of 6 × 10 18 cm -3 was achieved with the aid of a polarization effect. As a result, a quasi-vertical Al 0.5 Ga 0.5 N p-n diode with a ∼1 V reduced forward voltage was demonstrated. Numerical calculations verified that the increased electron concentration beneath the n-metal induced by the polarization effect and recess structure was the main reason for the reduced forward voltage. This strategy could simultaneously decrease the Schottky barrier height as well as provide a better carrier transport channel, enhancing both the thermionic emission and tunneling processes. This investigation provides an alternative approach to obtain a good n-contact, especially for Al-rich AlGaN-based devices, such as diodes and LEDs., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

In this work, by using three-dimensional finite-difference time-domain (3D FDTD) method, the effect of conventional nano-patterned sapphire substrate (NPSS) on the optical crosstalk and the light extraction efficiency (LEE) for InGaN/GaN-based flip-chip micro light-emitting diodes (µ-LEDs) are systematically studied. We find that the conventional NPSS is not suitable for µ-LEDs. It is because the inclined mesa sidewall for µ-LEDs possesses a good scattering effect for µ-LEDs, but the introduced conventional NPSS causes part of the light be off escape cone between sapphire and air and become the guided light. To suppress the guided light and improve the optical crosstalk, a thick air layer between the n-GaN layer and the sapphire substrate can be used as a light filter to prevent the guided light from propagating into the sapphire. However, in reality, it is challenging to make the aforementioned air layer from point of fabrication view. Therefore, we propose the air-cavity patterned sapphire substrate (AC-PSS) as the light filter. Our results show that the crosstalk ratio can be decreased to the value even lower than 10%. The LEE can also be enhanced simultaneously due to combination effects of the filtering effect of the AC-PSS and the scattering effect of the inclined mesa sidewall.

Objective: To examine the influence of widely used protein affinity tags and the tobacco PR1a signal peptide (SP) on detection, purification and bioactivity analyses of the small oomycete apoplastic effector SCR96 in planta., Results: Through agroinfiltration, the phytotoxic effector SCR96 of Phytophthora cactorum was expressed in Nicotiana benthamiana leaf apoplast as a fusion protein carrying single affinity tag (His, HA or FLAG) at either C- or N-terminus. Leaf necrosis caused by different affinity-tagged SCR96 varied among tags and replicates. All of tagged proteins can be detected by antibodies against SCR96. All of SCR96 fusions except N-terminally fused 6His-tagged protein were detected using tag antibodies, indicating that 6His tag may be degraded when fused at N-terminus. Interestingly, C-terminal His- and FLAG-tagged SCR96 maintained the biological activity after purification. In the substitution assay of SCR96 SP, we observed that PR1a SP can lead chimeric SCR96 expression in N. benthamiana, but the replacement totally disrupted its bioactivity., Conclusion: C-terminal His or FLAG tag, along with its original SP, is efficient enough to enable detection and purification of functional SCR96 from N. benthamiana leaf apoplast, which would facilitate plant-pathogen interaction studies., (© 2022. The Author(s), under exclusive licence to Springer Nature B.V.)

In this report, the impact of different mesa designs on the optical and electrical characteristics for GaN-based micro-light emitting diodes (µLEDs) has been systematically and numerically investigated by using TCAD simulation tools. Our results show that an enhanced light extraction efficiency can be obtained by using beveled mesas. The inclined mesa angles can more effectively reflect the photons to the substrate, and this helps to extract the photons to free air for flip-chip µLEDs. However, it is found that the current injection is influenced by inclination angles for the investigated µLEDs, such that the beveled mesas make stronger charge-coupling effect and increase the electric field magnitude in the multiple quantum wells at the mesa edge, so that the carriers cannot be effective consumed by radiative recombination. As a result, this gives rise to stronger defect-induced nonradiative recombination at mesa surfaces. Therefore, there are tradeoffs between the LEEs and IQEs when changing the beveled angle, to maximize external quantum efficiency for GaN-based µLEDs, the beveled mesa angle shall be carefully designed and optimized.

In this report, a p + -GaN/SiO 2 /Ni tunnel junction with a local SiO 2 insulation layer is designed to manage the current distribution for commercially structured AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) with a thin p-GaN layer. The experimental and calculated results prove that, besides the increased hole injection at the p + -GaN/SiO 2 /Ni tunnel junction, the local SiO 2 layer produces an in-plane unbalanced energy band in the p-GaN layer for the proposed DUV LEDs, thus modulating the carrier transport paths and increasing the spread of holes. Enhanced optical power is obtained when compared to conventional DUV LEDs. In addition, the influence of the position of the SiO 2 insulation layer on the current distribution is also investigated in this work. Placing the SiO 2 insulation layer in the middle position of the p + -GaN layer is most helpful for increasing the hole injection efficiency for commercially structured DUV LEDs.

Eleven undescribed isoquinoline alkaloids corybungines A-K including a protoberberine-type alkaloid, an isoquinoline alkaloid with a unique 6-norprotoberberine skeleton, one 13,14-seco-protoberberine-type alkaloid, two 1a,14-seco-protoberberine-type alkaloids with a 4-(hydroxymethyl)phenoxy moiety and six aporphine alkaloids, together with seven known alkaloids, have been isolated from the whole herb extract of Corydalis bungeana Turcz. Their structures and absolute configurations were elucidated based on an analysis of spectroscopic data and electronic circular dichroism (ECD) spectra. (R)-stephanine displayed high antagonistic activity against the dopamine D2 receptor with an IC 50 value of 0.85 ± 0.09 μM in CHO-D2 cells. Additionally, corybungines D, F, H, (R)-roemerine, (R)-vireakine and (R)-tuduranine showed moderate D2 antagonism (IC 50 5.20-26.07 μM). The preliminary structure-activity relationships (SARs) of aporphine alkaloids were discussed., (Copyright © 2022 Elsevier Ltd. All rights reserved.)

Biological soil crusts (biocrusts) are the mixed community composed of different ratios of cyanobacteria, mosses, and lichens at the slope scale in the Hilly Loess Plateau region. Biocrusts significantly affect water infiltration in this area. The relationship between infiltration rate and community structure of mixed biocrusts is unknown, which would hinder the assessment of soil permeability of biocrusts at the slope scale. We measured the stable infiltration rate of cyanobacteria, moss, and mixed biocrusts with different proportions of cyanobacteria and moss including moss coverage of <15%, 15%-30%, 30%-45%, 45%-60% and >60%, respectively. The principal component analysis and path analysis were used to understand the influencing factors of stable infiltration rate of mixed biocrusts, and to clarify the relationship between the stable infiltration rate and the community structure of mixed biocrusts. The results showed that the saturated hydraulic conductivity of cyanobacteria and moss crusts was 0.66 mm·min -1 and 2.40 mm·min -1 , respectively. The stable infiltration rates of mixed biocrusts with moss coverage <15% to >60% were 0.80-2.30 mm·min -1 . The stable infiltration rate of mixed biocrusts at the slope scale depended on moss coverage and its improvement on soil pore structure, with the correlation coefficients being 0.636 ( P =0.011) and 0.835 ( P =0.000) respectively. Herein, the saturated hydraulic conductivity and coverage of cyanobacteria and moss confirmed the weighted prediction of water infiltration volume ( y ) i.e ., a significant correlation ( r =0.945) with the measured water infiltration volume ( x ) of mixed biocrusts. The linear fitting of measured and predicted water infiltration volume of mixed biocrusts was y =0.85 x ( R 2 =0.98, P <0.05). This study clarified the relationship between water infiltration of mixed biocrust community composition and individual biocrust composition, which provided a scientific basis for accurately evaluating the hydrological process of biocrusts in this area.

Water is the key factor for vegetation restoration in the Loess Plateau region. Biological soil crust (biocrust), a widely distributed soil surface cover, significantly affects soil infiltration. Disturbance would affect soil water infiltration of biocrust. The effects of different intensities of disturbance on soil water infiltration of biocrust are still unclear. By simulating the trampling disturbance of sheep, we examined the effects of disturbance intensity (10%, 20%, 30%, and 40%) estimated by the coverage of broken biocrust on the surface cover of biocrust slope in the Hegou catchment of Wuqi County, Shaanxi Province. Soil water infiltration under different intensities were measured by the linear source infiltration method. The influence mechanisms of disturbance on soil water infiltration of biocrust slope were investigated with a structural equation model and correlation analysis. Results showed that compared to that without disturbance, the coverage of cyanobacterial crust was increased by 33.6% at 10% of disturbance intensity, no difference at 20% of disturbance intensity, and decreased by 36.1% and 75.0% at 30% and 40% of disturbance intensities, respectively. Litter coverage was increased by 34.3% under 40% of disturbance intensity, while that of other treatments were not changed. Surface roughness was decreased by 22.3%, 11.1%, and 5.6% at 10%, 20%, and 30% of disturbance intensities, respectively, but increased by 8.2% at the 40% of disturbance intensity. The initial infiltration rate at 40% of disturbance intensity was 77.1% higher than that without disturbance, while other treatments had no significant difference at the initial infiltration rate. Furthermore, distur-bance did not affect the stable and average infiltration rate. Our results confirmed that disturbance mainly promoted the initial infiltration by reducing the coverage of cyanobacterial crust, increasing the coverage of litter, and changing soil roughness. This study would provide scientific basis for the management of biocrust of rehabilitated lands in the Loess Plateau region.

Four new isoquinoline alkaloids including a benzophenanthridine alkaloid (1), a morphine derivative (2), a narceine-type alkaloid (3) and a simple isoquinoline alkaloid (4), a new amide alkaloid (5) and a new phthalic acid derivative (6), together with eleven known alkaloids (7-17) were obtained from the whole herbs extract of Corydalis bungeana Turcz. Their structures and absolute configurations were elucidated by extensive spectroscopic data analysis including HRESIMS, NMR and electronic circular dichroism (ECD) and ECD calculation. Compounds 1-17 were evaluated for dopamine D2 receptor activity in CHO-D2 cells. Among them, 16 showed the highest antagonistic activity on the D2 receptor with an IC 50 value of 2.04 ± 0.01 μM. Compounds 14 and 15 exhibited moderate antagonism with IC 50 values of 13.66 ± 2.28 and 31.72 ± 2.52 μM, respectively., (Copyright © 2022 Elsevier B.V. All rights reserved.)

Low light extraction efficiency (LEE), high forward voltage and severe self-heating effect greatly affect the performance for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). In this work, surface-textured Ga-face n-AlGaN is fabricated low-costly using self-assembled SiO 2 nanosphere as hard mask. The experimental results manifest that when compared with conventional DUV LEDs, the optical power, the forward voltage and the thermal characteristics for the DUV LEDs with surface-textured Ga-face n-AlGaN are improved obviously. It is because the surface-textured Ga-face n-AlGaN between mesa and the n-electrode can be used as the scattering center for trapped light, and this leads to the enhanced LEE. Furthermore, thanks to the surface-textured n-AlGaN under the n-electrode, the n-type ohmic contact area can be increased effectively. Therefore, the n-type ohmic contact resistance can be reduced and the better heat dissipation can be attained for the proposed flip-chip DUV LED.

In this work, we have proposed and fabricated a metal/Ga 2 O 3 /GaN hybrid structure metal-semiconductor-metal ultraviolet photodetector with low dark current and high responsivity. The Schottky contact of Ni/Ga 2 O 3 makes the Ga 2 O 3 layer fully depleted. The strong electric field in the Ga 2 O 3 depletion region can push the photo-induced electrons from the Ga 2 O 3 layer into the GaN layer for more efficient carrier transport. Therefore, the hybrid structure simultaneously utilizes the advantage of the absorption to solar-blind ultraviolet light by the Ga 2 O 3 layer and the high electron mobility of the GaN layer. Thus, the dark current and the photocurrent for the proposed device can be greatly improved. As a result, an extremely high photo-to-dark-current ratio of 1.46 × 10 6 can be achieved. Furthermore, quick rise and fall times of 0.213 s and 0.027 s at the applied bias of 6 V are also obtained, respectively.

In this work, a 280-nm-wavelength deep-ultraviolet light-emitting diode (DUV LED) with a p + -GaN/SiO 2 /ITO tunnel junction is fabricated and investigated. Due to the decreased tunnel region width and enhanced electric field intensity in the 1-nm-thick SiO 2 layer, the interband tunneling efficiency and the corresponding hole injection efficiency are promoted. Therefore, the external quantum efficiency (EQE) for the proposed device is increased when compared with a traditional DUV LED. In addition, an improved current spreading effect is observed for our proposed device. As a result, improved wall-plug efficiency (WPE) is obtained owing to the increased optical power and decreased forward operating voltage. Meanwhile, the enhanced electric field intensity in the SiO 2 layer reduces the voltage drop in the p-n junction region for the proposed device, and thus the leakage current is reduced.

Doping Mn 2+ into CsPbCl 3 nanocrystals (NCs) yields strong orange emission, while the related emission in Mn 2+ doped CsPbBr 3 NCs is impaired seriously. This is mainly ascribed to back energy transfer from the Mn 2+ dopant to the host. Doping Mn 2+ into perovskites with multiple-quantum-well (MQW) structures may address this issue, where the energy funnels ensure a rapid energy transfer process, and thus resulting in a high photoluminescence quantum yield (PLQY). Here, we have developed an Ag + assisted Mn 2+ doping method in which Mn 2+ can be easily doped into Br-based MQW perovskites. In this MQW perovskites, both nanoplatelets (NPLs) and NCs were formed simultaneously, where efficient energy transfer occurred from the NPLs with a higher energy bandgap to the NCs with a smaller energy bandgap, and then to the Mn 2+ dopants. White lighting solution with a PLQY up to 98% has been acquired by altering the experimental parameters, such as reaction time and the Pb-to-Mn feed ratio. The successful doping of Mn 2+ into CsPbBr 3 host has great significance and shows promising application for next-generation white lighting., Competing Interests: Declaration of Competing Interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper., (Copyright © 2021 Elsevier Inc. All rights reserved.)

In this work, a 280 nm AlGaN-based deep ultraviolet light-emitting diode (DUV LED) with a metal-insulator-semiconductor (MIS) structured n-electrode is fabricated and studied. The S i O 2 insulator layer is adopted to form the MIS structure by using an atomic layer deposition system. After adopting the MIS-structured n-electrode, the S i O 2 intermediate layer enables electron affinity for the contact metal to be higher than the conduction band of the n-AlGaN layer, which favors the electrons to be injected into the n-AlGaN layer by intraband tunneling rather than thermionic emission. Moreover, the thin S i O 2 insulator can share the applied bias, which makes the n-AlGaN layer surface less depleted and thus further facilitates the electron injection. The improved electron injection capability at the metal-semiconductor interface helps reduce the contact resistance and increase electron concentration in the active region, which then improves external quantum efficiency and wall-plug efficiency for the proposed DUV LED.

Traditional GaN-based metal-semiconductor-metal (MSM) photodetector (PD) features a symmetric structure, and thus a poor lateral carrier transport can be encountered, which can decrease the photocurrent and responsivity. To improve its photoelectric performance, we propose GaN-based MSM photodetectors with an AlGaN polarization layer structure on the GaN absorption layer. By using the AlGaN polarization layer, the electric field in the metal/GaN Schottky junction can be replaced by the electric fields in the metal/AlGaN Schottky junction and the AlGaN/GaN heterojunction. The increased polarization electric field can enhance the transport for the photogenerated carriers. More importantly, such polarization electric field cannot be easily screened by free carriers, thus showing the detectability for the even stronger illumination intensity. Moreover, we also conduct in-depth parametric investigations into the impact of different designs on the photocurrent and the responsivity. Hence, device physics regarding such proposed MSM PDs has been summarized.

Due to the increased surface-to-volume ratio, the surface recombination caused by sidewall defects is a key obstacle that limits the external quantum efficiency (EQE) for GaN-based micro-light-emitting diodes (µLEDs). In this work, we propose selectively removing the periphery p + -GaN layer so that the an artificially formed resistive ITO/p-GaN junction can be formed at the mesa edge. Three types of LEDs with different device dimensions of 30 × 30 µm 2 , 60 × 60 µm 2 and 100 × 100 µm 2 are investigated, respectively. We find that such resistive ITO/p-GaN junction can effectively prevent the holes from reaching the sidewalls for µLEDs with smaller size. Furthermore, such confinement of injection current also facilitates the hole injection into the active region for µLEDs. Therefore, the surface-defect-caused nonradiative recombination in the edge of mesa can be suppressed. Meantime, a reduction of current leakage caused by the sidewall defects can also be obtained. As a result, the measured and calculated external quantum efficiency (EQE) and optical output power for the proposed LED with small sizes are increased.

In this report, we investigate the impact of a thin p-GaN layer on the efficiency for AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs). According to our results, the light extraction efficiency (LEE) becomes higher with the decrease of the p-GaN layer thickness, which can be ascribed to the decreased absorption of DUV emission by the thin p-GaN layer. Moreover, we also find that the variation trend of external quantum efficiency (EQE) is consistent with that of LEE. Therefore, we can speculate that high-efficiency DUV LEDs can be achieved by using thin p-GaN layer to increase the LEE. However, a thin p-GaN layer can also cause severe current crowding effect and the internal quantum efficiency (IQE) will be correspondingly reduced, which will restrict the improvement of EQE. In this work, we find that the adoption of a current spreading layer for such DUV LED with very thin p-GaN layer can facilitate the current spreading effect. For the purpose of demonstration, we then utilize a well-known p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layer. Our experimental and numerical results show that, as long as the current crowding effect can be suppressed, the DUV LED with thin p-GaN layer can significantly increase the EQE and the optical power thanks to the enhanced LEE.

It is known that light extraction efficiency (LEE) for AlGaN-based deep ultraviolet light-emitting didoes (DUV LEDs) can be enhanced by using truncated cone arrays with inclined sidewalls. In this work, the air-cavity-shaped inclined sidewall is applied and the p-GaN layer at the top of the truncated cone is laterally over-etched so that more light escape paths are generated for AlGaN-based DUV LEDs. The experimental results manifest that when compared with DUV LEDs only having the air-cavity-shaped inclined sidewall, the optical power for the DUV LEDs with laterally over-etched p-GaN at the top of the truncated cone is enhanced by 30% without sacrificing the forward bias. It is because the over-etched p-GaN makes little effect on the carrier injection and does not affect the ohmic contact resistance. Moreover, the simulation results show that the truncated cone with laterally over-etched p-GaN layer can enhance the LEE because the reduced p-GaN area can suppress the optical absorption and supplies additional light paths for DUV photos. Then, more light will be reflected into escape cones at the sapphire side.

Small cysteine-rich (SCR) proteins, including fungal avirulence proteins, play important roles in pathogen-plant interactions. SCR protein-encoding genes have been discovered in the genomes of Phytophthora pathogens but their functions during pathogenesis remain obscure. Here, we report the characterization of one Phytophthora capsici SCR protein (namely, SCR82) with similarity to Phytophthora cactorum phytotoxic protein PcF. The scr82 gene has 10 allelic sequences in the P. capsici population. Homologs of SCR82 were not identified in fungi or other organisms but in Phytophthora relative species. Initially, scr82 was weakly expressed during the mycelium, sporangium, and zoospore stages but quickly upregulated when the infection initiated. Both ectopic expression of SCR82 and recombinant yeast-expressed protein (rSCR82) caused cell death on tomato leaves. Upon treatment, rSCR82 induced plant defense responses, including the induction of defense gene expression, reactive oxygen species burst, and callose deposition. Knockout of scr82 in P. capsici by CRISPR/Cas9 severely impaired its virulence on host plants and significantly reduced its resistance against oxidative stress. Inversely, its overexpression increased the pathogen's virulence and tolerance to oxidative stress. Our results collectively demonstrate that SCR82 functions as both an important virulence factor and plant defense elicitor, which is conserved across Phytophthora spp.[Formula: see text] Copyright © 2021 The Author(s). This is an open access article distributed under the CC BY-NC-ND 4.0 International license.

In this work, we propose adopting step-type quantum wells to improve the external quantum efficiency for GaN-based yellow micro light-emitting diodes. The step-type quantum well is separated into two parts with slightly different InN compositions. The proposed quantum well structure can partially reduce the polarization mismatch between quantum barriers and quantum wells, which increases the overlap for electron and hole wave functions without affecting the emission wavelength. Another advantage is that the slightly decreased InN composition in the quantum well helps to decrease the valence band barrier height for holes. For this reason, the hole injection capability is improved. More importantly, we also find that step-type quantum wells can make holes spread less to the mesa edges, thus suppressing the surface nonradiative recombination and decreasing the leakage current.

Strain-reduced micro-LEDs in 50 μm × 50 μm, 100 μm × 100 μm, 200 μm × 200 μm, 500 μm × 500 μm, and 1,000 μm × 1,000 μm sizes were grown on a patterned c-plane sapphire substrate using partitioned growth with the metal-organic chemical-vapor deposition (MOCVD) technique. The size effect on the optical properties and the indium concentration for the quantum wells were studied experimentally. Here, we revealed that the optical properties can be improved by decreasing the chip size (from 1,000 to 100 µm), which can correspondingly reduce the in-plane compressive stress. However, when the chip size is further reduced to 50 μm × 50 μm, the benefit of strain release is overridden by additional defects induced by the higher indium incorporation in the quantum wells and the efficiency of the device decreases. The underlying mechanisms of the changing output power are uncovered based on different methods of characterization. This work shows the rules of thumb to achieve optimal power performance for strain-reduced micro-LEDs through the proposed partitioned growth process., Competing Interests: The authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest., (Copyright © 2021 Lu, Zhang, Zhang, Tsai, Zhang, Tan and Demir.)

Metal halide perovskites have been extensively studied recently by virtue of their extraordinary luminescence characteristics. However, they still suffer from severe stability issues, and contain a toxic metal lead. Here, single crystals of (PEA) 4 Cu 4 I 4 , a lead-free orange-red-emitting organic-inorganic copper-halide compound with a photoluminescence quantum yield (PLQY) of 68%, were synthesized via a simple solvent vapor diffusion process with commercially-available phenylethylamine (PEA) as a ligand. The crystals show superior stability to perovskites with retaining 60% of their initial photoluminescence (PL) intensity after 60 days in water, which is due to the hydrophobic nature of PEA and the stable Cu-N bonds. Phase transition is found to take place upon lowering the temperature, which causes a redshift of the PL peak. The emission band is identified to be associated with triplet cluster-centered (CC) excited states because of their shortened Cu-Cu distances, excitation-independent PL and long PL lifetime. In addition, micron-sized oleic acid capped (PEA) 4 Cu 4 I 4 particles were developed by a hot-injection method, and they possess similar stability to that of bulk crystals. A monochrome LED was further fabricated by employing the as-prepared micron-sized particles as phosphors, demonstrating their potential for optoelectronic applications.

Meiosis, which produces haploid progeny, is critical to ensuring both faithful genome transmission and genetic diversity. Proteasomes play critical roles at various stages of spermatogenesis, including meiosis, but the underlying mechanisms remain unclear. The atypical proteasomes, which contain the activator PA200, catalyze the acetylation-dependent degradation of the core histones in elongated spermatids and DNA repair in somatic cells. We show here that the testis-specific proteasome subunit α4s/PSMA8 is essential for male fertility by promoting proper formation of spermatoproteasomes, which harbor both PA200 and constitutive catalytic subunits. Immunostaining of a spermatocyte marker, SYCP3, indicated that meiosis was halted at the stage of spermatocytes in the α4s-deficient testes. α4s stimulated the in vitro degradation of the acetylated core histones, instead of nonacetylated histones, by the PA200-proteasome. Deletion of α4s blocked degradation of the core histones at DNA damage loci in spermatocytes, leading to meiotic arrest at metaphase I. Thus, α4s is required for histone degradation at meiotic DNA damage loci, proper progression of meiosis, and fertility in males by promoting proper formation of spermatoproteasomes. These results are important for understanding male infertility and might provide potential targets for male contraception or treatment of male infertility., Competing Interests: Conflict of interest The authors declare that they have no conflicts of interest with the contents of this article., (Copyright © 2020 The Authors. Published by Elsevier Inc. All rights reserved.)

Carrier imbalance resulting from stronger electron injection from ZnO into quantum-dot (QD) emissive layer than hole injection is one critical issue that constrains the performance of QDs-based light-emitting diodes (QLEDs). This study reports highly efficient inverted QLEDs enabled by periodic insertion of MoO 3 into (4,4'-bis( N -carbazolyl)-1,1'-biphenyl) (CBP) hole transport layer (HTL). The periodic ultrathin MoO 3 /CBP-stacked HTL results in improved lateral current spreading for the QLEDs, which significantly relieves the crowding of holes and thus enhances hole transport capability across the CBP in QLEDs. Comprehensive analysis on the photoelectric properties of devices shows that the optimal thickness for MoO 3 interlayer inserted in CBP is only ≈1 nm. The resulting devices with periodic two insertion layers of MoO 3 into CBP exhibit better performance compared with the CBP-only ones, such that the peak current efficiency is 88.7 cd A -1 corresponding to the external quantum efficiency of 20.6%. Furthermore, the resulting QLEDs show an operational lifetime almost 2.5 times longer compared to CBP-only devices., Competing Interests: The authors declare no conflict of interest., (© 2020 The Authors. Published by Wiley‐VCH GmbH.)

In this paper, high-performance 1×128 linear arrays of 4H-SiC ultraviolet (UV) avalanche photodiode (APD) with dual-frequency plasma enhanced chemical vapor deposition (PECVD) passivation are demonstrated for the first time. The results show that SiNx dielectric deposited by dual-frequency PECVD can effectively reduce the leakage current at high bias voltages. Due to the improved 4H-SiC epi-layer material and SiNx passivation, the fabricated 22 mm-long 1×128 4H-SiC APD linear arrays exhibit an excellent performance with a high pixel yield of 100% and a small breakdown voltage variation of 0.2 V, which is the best result ever reported. At room temperature, the pixels have a gain of over 10 5 and a maximum quantum efficiency of 53.5% @ 285 nm. Besides the high uniformity of breakdown voltage for 128 pixels, the dark currents at 95% of breakdown voltage are all below 1 nA.

Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (μLEDs) strongly suffer from surface recombination that is induced by sidewall defects. Moreover, as the chip size decreases, the current spreading will be correspondingly enhanced, which therefore further limits the carrier injection and the external quantum efficiency (EQE). In this work, we suggest reducing the nonradiative recombination rate at sidewall defects by managing the current spreading effect. For that purpose, we properly reduce the vertical resistivity by decreasing the quantum barrier thickness so that the current is less horizontally spreaded to sidewall defects. As a result, much fewer carriers are consumed in the way of surface nonradiative recombination. Our calculated results demonstrate that the suppressed surface nonradiative recombination can better favor the hole injection efficiency. We also fabricate the μLEDs that are grown on Si substrates, and the measured results are consistent with the numerical calculations, such that the EQE for the proposed μLEDs with properly thin quantum barriers can be enhanced, thanks to the less current spreading effect and the decreased surface nonradiative recombination.

In this report, we propose GaN-based vertical cavity surface emitting lasers with a p-GaN/n-GaN/p-GaN (PNP-GaN) structured current spreading layer. The PNP-GaN current spreading layer can generate the energy band barrier in the valence band because of the modulated doping type, which is able to favor the current spreading into the aperture. By using the PNP-GaN current spreading layer, the thickness for the optically absorptive ITO current spreading layer can be reduced to decrease internal loss and then enhance the lasing power. Furthermore, we investigate the impact of the doping concentration, the thickness and the position for the inserted n-GaN layer on the lateral hole confinement capability, the lasing power, and the optimization strategy. Our investigations also report that the optimized PNP-GaN structure will suppress the thermal droop of the lasing power for our proposed VCSELs.

In this work, we propose and demonstrate the concept of remote reflections, which help to multiply the photon propagations for increasing the light extraction efficiency (LEE) for both transverse magnetic (TM)- and transverse electric (TE)-polarized light. The remote reflection is enabled by using a remote-metal-reflector-based air cavity extractor. According to our study, the remote reflections can significantly avoid the optical absorption when compared with the conventional inclined-sidewall-shaped deep-ultraviolet light-emitting diodes with the metal Al reflector on the inclined sidewalls. As a result, the optical power for our proposed devices has been significantly enhanced by 55% experimentally. Numerical simulations further reveal that the remote metal reflector not only favors more total internal refection on the inclined sidewalls but also supports additional light escaped channels for enhancing the LEE.

The ${{\rm MoO}&#95;{\rm x}}/{\rm Al}$MoO x /Al electrode was designed and fabricated on p-GaN and sapphire with good ohmic behavior and decent deep ultraviolet (DUV) reflectivity, respectively. The influences of ${{\rm MoO}&#95;{\rm x}}$MoO x thickness and annealing condition on the electrical and optical behaviors of the ${{\rm MoO}&#95;{\rm x}}/{\rm Al}$MoO x /Al structure were investigated. Surface morphology of ${{\rm MoO}&#95;{\rm x}}$MoO x with different thicknesses reveals a 3D growth mode. Partial decomposition of ${{\rm MoO}&#95;{\rm x}}$MoO x was discovered, which helps in the formation of ohmic contact between ${{\rm MoO}&#95;{\rm x}}$MoO x and Al. The potential for application in deep ultraviolet light-emitting-diodes (DUV-LEDs) has also been demonstrated.

A better lateral current confinement is essentially important for GaN-based vertical-cavity-surface-emitting lasers (VCSELs) to achieve lasing condition. Therefore, a buried insulator aperture is adopted. However, according to our results, we find that the current cannot be effectively laterally confined if the insulator layer is not properly selected, and this is because of the unique feature for GaN-based VCSELs grown on insulating substrates with both p-electrode and n-electrode on the same side. Our results indicate that the origin for the current confinement arises from lateral energy band bending in the p-GaN layer rather than the electrical resistivity for the buried insulator. The lateral energy band in the p-GaN layer can be more flattened by using a buried insulator with a properly larger dielectric constant. Thus, less bias can be consumed by the buried insulator, enabling better lateral current confinement. On the other hand, the bias consumption by the buried insulator is also affected by the insulator thickness, and we propose to properly decrease the insulator layer thickness for reducing the bias consumption therein and achieving better lateral current confinement. The improved lateral current confinement will correspondingly enhance the lasing power. Thanks to the enhanced lateral current confinement, the 3dB frequency will also be increased if proper buried insulators are adopted.

White light-emitting diodes (WLEDs) based on all-inorganic perovskite CsPbX 3 (X = Cl, Br, I) quantum dots (QDs) have attracted much attention and rely on mixing several colors of perovskites. However, this inevitably leads to a non-uniform light distribution and serious light loss. Here, a novel strategy was demonstrated to obtain white emission by combining the orange and blue emission from CsPb/Mn(Cl/Br) 3 QDs. Notably, highly efficient white emission with a photoluminescence quantum yield of 94% was achieved by an anion exchange surface engineering (AESE) strategy. After AESE treatment the surface traps can be eliminated, resulting in improved exciton and Mn 2+ emission. A prototype WLED device was fabricated and exhibited excellent optical stability, demonstrating great potential for perovskite QDs in the field of optoelectronics.

Objective: We aimed to investigate the expression of a novel small cysteine-rich (SCR) effector protein SCR96 from the phytopathogenic oomycete Phytophthora cactorum in mammalian cells, its bioactivity and to exploit its polyclonal antibody., Results: The gene encoding the SCR effector protein SCR96 was codon-optimized, custom-synthesized, cloned into pcDNA3.1(-) and overexpressed in human embryonic kidney (HEK) 293-6E cells. The recombinant protein SCR96 was prone to aggregation and purified with its monomer to homogeneity with a predicted molecular weight of 8.9 kDa. SCR96 exhibited strong phytotoxic activity on tomato seedlings at 24 h post treatment with 4.2 μg of the purified protein. An anti-SCR96 polyclonal antibody was prepared by immunization of New Zealand white rabbits. The good-titer antibody had a detection sensitivity at 6.25-ng level and could specifically detect the SCR96 protein expressed either in yeast, or in tomato leaves., Conclusions: Transient production of the SCR effector protein SCR96 in mammalian cells is reliable, providing sufficient recombinant protein that can be utilized for analysis of its phytotoxic activity and preparation of its polyclonal antibody.

In this work, parametric investigations on structural optimization are systematically made for 4H-SiC-based separated absorption charge and multiplication (SACM) avalanche ultraviolet photodiode (UV APD). According to our results, the breakdown voltage can be strongly affected by the thickness for the multiplication layer and the doping concentration for the charge control layer. The thickness for the n-type ohmic contact layer, the absorption layer, and the charge control layer can remarkably affect the light penetration depth, which correspondingly influences the number of photo-generated electron-hole pairs, and therefore the aforementioned layer thickness has a strong impact on the responsivity for SACM APD. For enhancing the responsivity of the APD, we require a reduced energy band barrier height at the interface of the optical absorption layer and the charge control layer, so that the promoted carrier transport into the multiplication layer can be favored. In addition, we investigate positive beveled mesas with smaller angles so as to reduce the electric field at the mesa edge. Thus, the dark current is correspondingly suppressed.

In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a thin p-AlGaN layer into the n-AlGaN electron supplier layer, a conduction band barrier can be generated in the n-type electron supplier layer, which enables the modulation of the lateral current distribution in the p-type hole supplier layer for DUV LEDs. Additionally, according to our studies, the Mg doping concentration, the thickness, the AlN composition for the p-AlGaN insertion layer and the NPN-AlGaN junction number are found to have a great influence on the current spreading effect. A properly designed NPN-AlGaN current spreading layer can improve the optical output power, external quantum efficiency (EQE), and the wall-plug efficiency (WPE) for DUV LEDs.

Plant pathogens employ diverse secreted effector proteins to manipulate host physiology and defense in order to foster diseases. The destructive Phytophthora pathogens encode hundreds of cytoplasmic effectors, which are believed to function inside the plant cells. Many of these cytoplasmic effectors contain the conserved N-terminal RXLR motif. Understanding the virulence function of RXLR effectors will provide important knowledge of Phytophthora pathogenesis. Here, we report the characterization of RXLR effector PcAvh1 from the broad-host range pathogen Phytophthora capsici . Only expressed during infection, PcAvh1 is quickly induced at the early infection stages. CRISPR/Cas9-knockout of PcAvh1 in P. capsici severely impairs virulence while overexpression enhances disease development in Nicotiana benthamiana and bell pepper, demonstrating that PcAvh1 is an essential virulence factor. Ectopic expression of PcAvh1 induces cell death in N. benthamiana , tomato, and bell pepper. Using yeast two-hybrid screening, we found that PcAvh1 interacts with the scaffolding subunit of the protein phosphatase 2A (PP2Aa) in plant cells. Virus-induced gene silencing of PP2Aa in N. benthamiana attenuates resistance to P. capsici and results in dwarfism, suggesting that PP2Aa regulates plant immunity and growth. Collectively, these results suggest that PcAvh1 contributes to P. capsici infection, probably through its interaction with host PP2Aa.

CsPbX 3 perovskite nanocrystals (NCs) are becoming a promising material for optoelectronic devices that possess an optically tunable bandgap, and bright photoluminescence. However, the toxic Pb is not environmentally friendly and the quantum yield (QY) of blue emitting NCs is relatively low. In addition, the red emitting perovskite containing iodine is not stable under light illumination. In this paper, high QY, blue emitting, non-toxic fluorescent nanomaterial carbon dots and orange-emitting CsPb 0.81 Mn 0.19 Cl 3 NCs with partial Pb replacement are combined to fabricate white light-emitting diodes (WLEDs). A WLED with color coordinates of (0.337, 0.324) and a correlated color temperature of 4804 K is fabricated. Compared to red emitting perovskite containing iodine, the CsPb 0.81 Mn 0.19 Cl 3 NCs are stable no matter whether they are stored in the air or exposed under ultraviolet light. Therefore, the as-fabricated WLED shows good color stability against increasing currents and long-term working stability.

In this work, the size-dependent effect for InGaN/GaN-based blue micro-light emitting diodes (µLEDs) is numerically investigated. Our results show that the external quantum efficiency (EQE) and the optical power density drop drastically as the device size decreases when sidewall defects are induced. The observations are owing to the higher surface-to-volume ratio for small µLEDs, which makes the Shockley-Read-Hall (SRH) non-radiative recombination at the sidewall defects not negligible. The sidewall defects also severely affect the injection capability for electrons and holes, such that the electrons and holes are captured by sidewall defects for the SRH recombination. Thus, the poor carrier injection shall be deemed as a challenge for achieving high-brightness µLEDs. Our studies also indicate that the sidewall defects form current leakage channels, and this is reflected by the current density-voltage characteristics. However, the improved current spreading effect can be obtained when the chip size decreases. The better current spreading effect takes account for the reduced forward voltage.

For the [0001] oriented AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the holes in the p-type electron blocking layer (p-EBL) are depleted due to the polarization induced positive sheet charges at the last quantum barrier (LQB)/p-EBL interface. The hole depletion effect significantly reduces the hole injection capability across the p-EBL. In this work, we propose inserting a thin AlN layer between the LQB and the p-EBL, which can generate the hole accumulation at the AlN/p-EBL interface. Meanwhile, the holes can obtain the energy when traveling from the p-EBL into the multiple quantum wells (MQWs) by intraband tunneling through the thin AlN layer. As a result, the hole injection and the external quantum efficiency (EQE) have been remarkably enhanced. Moreover, we point out that the thick AlN insertion layer can further generate the hole accumulation in the p-EBL and increase the hole energy which helps to increase the hole injection. We also prove that the intraband tunneling for holes across the thick AlN insertion layer is facilitated by using the optimized structure.

In this work, flip-chip AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with various meshed contact structures are systematically investigated via three-dimensional finite-difference time-domain (3D FDTD) method. It is observed that both transverse electric (TE)- and transverse magnetic (TM)-polarized light extraction efficiencies (LEEs) are sensitive to the spacing and inclined angle for the meshed structure. We also find that the LEE will not be increased when a large filling factor is adopted for the meshed structures, which is because of the competition among the p-GaN layer absorption, the Al metal plasmon resonant absorption, and the scattering effect by meshed structures. The very strong scattering effect occurring in the hybrid p-GaN nanorod/p-AlGaN truncated nanocone contacts can enormously enhance the LEE for both TE- and TM-polarized light, e.g., when the inclined angle is 30°, the LEE for the TE- and TM-polarized light can be increased by ~ 5 times and ~ 24 times at the emission wavelength of 280 nm, respectively.

In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated. According to our results, the adopted PNP-AlGaN structure can induce an energy barrier in the hole injection layer that can modulate the lateral current distribution. We also find that the current spreading effect can be strongly affected by the thickness, the doping concentration, the PNP loop, and the AlN composition for the inserted n-AlGaN layer. Therefore, if the PNP-AlGaN structure is properly designed, the forward voltage, the external quantum efficiency, the optical power, and the wall-plug efficiency for the proposed DUV LEDs can be significantly improved as compared with the conventional DUV LED without the PNP-AlGaN structure.

This work establishes the relationship between the electron energy and the electron concentration within the multiple quantum wells (MQWs) for AlGaN based deep ultraviolet light-emitting diodes (DUV LEDs). The electron energy of different values can be obtained by modulating the Si doping concentration in the n-AlGaN layer and/or engineering the polarization induced interface charges. The modulated Si doping concentration in the n-AlGaN layer will cause the interface depletion region within which the electric field can be generated and then tunes the electron energy. The polarization induced charges and the polarization induced electric field can be obtained by stepwisely reducing the AlN composition for the n-AlGaN layer along the [0001] orientation. We find that the electron concentration in the MQWs can be increased once the electron energy is reduced to a proper level, which correspondingly improves the external quantum efficiency (EQE) for DUV LEDs. According to our investigations, it is more advisable to adopt the n-AlGaN layer with the stepwise AlN composition, which can make both the EQE and the wall plug efficiency high.