1. High-Speed Single-Event Current Transient Measurements in SiGe HBTs
- Author
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Pellish, Jonathan A, Reed, R.A, McMorrow, D, Vizkelethy, G, Ferlet-Cavrois, V, Baggio, J, Paillet, P, Duhamel, O, Phillips, S.D, Sutton, A.K, Diestelhorst, R.M, Cressler, J.D, Dodd, P.E, Pate, N.D, Alles, M.L, Schrimpf, R.D, Marshall, P.W, and LaBel, K.A
- Subjects
Electronics And Electrical Engineering - Abstract
Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: 1) Position correlation. 2) Unique response for different bias schemes. 3) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: 1) Feedback using microbeam data 2) Overcome existing issues of LET and ion range with microbeam Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.
- Published
- 2009