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In metal-based single-electron devices (SEDs), charge-offset drift has been observed, which is a time-dependent instability caused by charge noise. This instability is an issue in the application of new information processing devices, such as neural network devices, quantum computing devices (charge sensing), and reservoir computing devices. Therefore, the charge-offset drift in metal-based SEDs needs to be suppressed. However, the charge-offset stability of metal-based SEDs has not been investigated in depth, except in the case of Al and Al2O3 SEDs. In this work, Fe-based SEDs formed by single-layer Fe nanodot arrays embedded in MgF2 were studied with regard to their charge-offset stability. Using devices that produce simple current oscillations, the charge-offset drift (Delta Q(0)) of Fe-based SEDs was evaluated by focusing on peak shifts of the simple current oscillation over time, despite the use of a multi-dot system. This drift (Delta Q(0) approximate to 0.3e) was shown to be much lower than in SEDs with Al-dots and Al2O3 tunnel junctions. Notably, the charge-offset drift in the metal-based SEDs was suppressed using the Fe-MgF2 system. The excellent stability of these devices was attributed to the material properties of the Fe-MgF2 system. Finally, as the Fe nanodot array contained numerous dots, the effect of satellite dots acting as traps on the charge-offset instability was discussed. The findings of this study will be important in future applications of metal-based SEDs in new information processing devices.

In metal-based single-electron devices (SEDs), charge-offset drift has been observed, which is a time-dependent instability caused by charge noise. This instability is an issue in the application of new information processing devices, such as neural network devices, quantum computing devices (charge sensing), and reservoir computing devices. Therefore, the charge-offset drift in metal-based SEDs needs to be suppressed. However, the charge-offset stability of metal-based SEDs has not been investigated in depth, except in the case of Al and Al2O3 SEDs. In this work, Fe-based SEDs formed by single-layer Fe nanodot arrays embedded in MgF2 were studied with regard to their charge-offset stability. Using devices that produce simple current oscillations, the charge-offset drift (Delta Q(0)) of Fe-based SEDs was evaluated by focusing on peak shifts of the simple current oscillation over time, despite the use of a multi-dot system. This drift (Delta Q(0) approximate to 0.3e) was shown to be much lower than in SEDs with Al-dots and Al2O3 tunnel junctions. Notably, the charge-offset drift in the metal-based SEDs was suppressed using the Fe-MgF2 system. The excellent stability of these devices was attributed to the material properties of the Fe-MgF2 system. Finally, as the Fe nanodot array contained numerous dots, the effect of satellite dots acting as traps on the charge-offset instability was discussed. The findings of this study will be important in future applications of metal-based SEDs in new information processing devices.

In metal-based single-electron devices (SEDs), charge-offset drift has been observed, which is a time-dependent instability caused by charge noise. This instability is an issue in the application of new information processing devices, such as neural network devices, quantum computing devices (charge sensing), and reservoir computing devices. Therefore, the charge-offset drift in metal-based SEDs needs to be suppressed. However, the charge-offset stability of metal-based SEDs has not been investigated in depth, except in the case of Al and Al2O3 SEDs. In this work, Fe-based SEDs formed by single-layer Fe nanodot arrays embedded in MgF2 were studied with regard to their charge-offset stability. Using devices that produce simple current oscillations, the charge-offset drift (Delta Q(0)) of Fe-based SEDs was evaluated by focusing on peak shifts of the simple current oscillation over time, despite the use of a multi-dot system. This drift (Delta Q(0) approximate to 0.3e) was shown to be much lower than in SEDs with Al-dots and Al2O3 tunnel junctions. Notably, the charge-offset drift in the metal-based SEDs was suppressed using the Fe-MgF2 system. The excellent stability of these devices was attributed to the material properties of the Fe-MgF2 system. Finally, as the Fe nanodot array contained numerous dots, the effect of satellite dots acting as traps on the charge-offset instability was discussed. The findings of this study will be important in future applications of metal-based SEDs in new information processing devices.

In metal-based single-electron devices (SEDs), charge-offset drift has been observed, which is a time-dependent instability caused by charge noise. This instability is an issue in the application of new information processing devices, such as neural network devices, quantum computing devices (charge sensing), and reservoir computing devices. Therefore, the charge-offset drift in metal-based SEDs needs to be suppressed. However, the charge-offset stability of metal-based SEDs has not been investigated in depth, except in the case of Al and Al2O3 SEDs. In this work, Fe-based SEDs formed by single-layer Fe nanodot arrays embedded in MgF2 were studied with regard to their charge-offset stability. Using devices that produce simple current oscillations, the charge-offset drift (Delta Q(0)) of Fe-based SEDs was evaluated by focusing on peak shifts of the simple current oscillation over time, despite the use of a multi-dot system. This drift (Delta Q(0) approximate to 0.3e) was shown to be much lower than in SEDs with Al-dots and Al2O3 tunnel junctions. Notably, the charge-offset drift in the metal-based SEDs was suppressed using the Fe-MgF2 system. The excellent stability of these devices was attributed to the material properties of the Fe-MgF2 system. Finally, as the Fe nanodot array contained numerous dots, the effect of satellite dots acting as traps on the charge-offset instability was discussed. The findings of this study will be important in future applications of metal-based SEDs in new information processing devices.