1. Spin-orbit torques and magnetization switching in (Bi,Sb)2Te3/Fe3GeTe2 heterostructures grown by molecular beam epitaxy
- Author
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European Commission, Agencia Estatal de Investigación (España), Ministerio de Ciencia e Innovación (España), Ministerio de Ciencia, Innovación y Universidades (España), Agence Nationale de la Recherche (France), Guillet, Thomas, Galceran, Regina, Sierra, Juan F., Belarre, Francisco J., Ballesteros, Belén, Costache, Marius V., Dosenovic, Djordje, Okuno, Hanako, Marty, Alain, Jamet, Matthieu, Bonell, Frédéric, Valenzuela, Sergio O., European Commission, Agencia Estatal de Investigación (España), Ministerio de Ciencia e Innovación (España), Ministerio de Ciencia, Innovación y Universidades (España), Agence Nationale de la Recherche (France), Guillet, Thomas, Galceran, Regina, Sierra, Juan F., Belarre, Francisco J., Ballesteros, Belén, Costache, Marius V., Dosenovic, Djordje, Okuno, Hanako, Marty, Alain, Jamet, Matthieu, Bonell, Frédéric, and Valenzuela, Sergio O.
- Abstract
Topological insulators (TIs) hold promise for manipulating the magnetization of a ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, integrating TIs with conventional FMs often leads to significant device-to-device variations and a broad distribution of SOT magnitudes. In this work, we present a scalable approach to grow a full van der Waals FM/TI heterostructure by molecular beam epitaxy, combining the charge-compensated TI (Bi,Sb)2Te3 with 2D FM Fe3GeTe2 (FGT). Harmonic magnetotransport measurements reveal that the SOT efficiency exhibits a non-monotonic temperature dependence and experiences a substantial enhancement with a reduction of the FGT thickness to 2 monolayers. Our study further demonstrates that the magnetization of ultrathin FGT films can be switched with a current density of Jc ∼ 1010 A/m2, with minimal device-to-device variations compared to previous investigations involving traditional FMs.
- Published
- 2024