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The temperature dependence of the resistivity,ρ, of ceramic of La₁₋xSrxMn₁₋yFeyO₃ (LSMFO) samples with x=0.3 and y=0.03, 0.15, 0.20 and 0.25 (or simply #03, #15, #20 and #25, respectively) is investigated between temperaturesT∼5 and 310 K in magnetic fields B up to 8 T, Belgorod State University

The resistivity, ρ, is investigated in ceramic La₁₋xSrx Mn₁₋yFeyO₃ samples with x=0.3 and y=0.03-0.25 at temperatures T ~ 5 - 310 K in magnetic fields B up to 8 T. The metallic conductivity at y=0.03 and the variable-range hopping (VRH) conductivity between y=0.15 - 0.25 are observed, Belgorod State University

Исследование температурной зависимости сопротивления керамических образцов La ₁-x Sr x Mn ₁-y Fe y O₃(LSMFO) при x = 0.3 и y = 0.03 - 0.25 в температурном диапазоне от 5 K до 310 К в магнитных полях выше 8 Тл

The Hall effect in single crystals of the group II–V semiconductor p-CdSb doped with 2 at% of Ni is investigated between T = 1.5 and 300 K in pulsed magnetic fields up to B = 25 T. The Hall resistivity, ρH, exhibits a nonlinear dependence on B, which is strongly pronounced below ~10 K but is still observed even up to 300 K, Belgorod State University

In this work detailed investigation of the hopping conductivity in p-CdSb:Ni in strong magnetic field is reported to complete the picture of hopping charge transfer in this material, Belgorod State University

In this work detailed investigation of the hopping conductivity in p-CdSb:Ni in strong magnetic field is reported to complete the picture of hopping charge transfer in this material, Belgorod State University

Disorder in stacking of vacant cites in the crystal structure of the diluted magnetic semiconducting alloy (Zn₁₋xMnx)₃As₂ is studied. Compositional dependencies of the order-disorder transition temperature, and the activation energy of hopping conductivity are analyzed, paying attention to atoms in the sites which are vacant in a completely ordered state, Belgorod State University

Magnetic properties of the semimagnetic semiconductor (Zn₁₋ₓMnₓ)₃As₂ (for short, ZMA) with 0.001≤ x≤0.13 have been investigated at temperatures between 4 and 300 K. It is shown that the magnetic susceptibilities of the samples cooled in zero external field (ZEC) and in a field (FC) are different for compositions with x≥0.02, Belgorod State University

The low-field magnetic properties above can be explained by the phase separation effect or generation of nanosize FM particles in the paramagnetic host matrix of LSMFO, Belgorod State University

Magnetic properties of the group II-V semiconductor CdSb single crystals doped with Ni (2at%) are investigated, Belgorod State University

The ferromagnetism of LSMFO is attributable to percolation over the system of such particles and generation of large FM clusters, whereas the frustration is governed presumably by a system of smaller weakly-correlated magnetic units, which do not enter the percolative FM clusters, Belgorod State University

From the experimental data the values of the localization radius and dielectric permittivity and details of their critical behavior near the metal-insulator transition, as well as the widths and the values of the density of the localized states, the acceptor energies, their concentrations and the anisotropy coefficients, are obtained, Belgorod State University

Hopping conductivity in single crystals of the group II-V ani-sotropic diluted magnetic semiconductor p-CdSb:Ni, oriented along the [100] (# 1), [010] (# 2) and [001] (# 3) axes, is in-vestigated in zero and pulsed magnetic fields B. At B= 0 the Mott variable-range hopping (VRH) conductivity is observed in # 2, and the Shklovskii-Efros VRH conductivity in # 1 and # 3 at T ≤2.5 K. However, in weak fields of B < 6 T tempera-ture dependence of the resistivity gives evidence for the Mott VRH conductivity in # 1 below ~ 4.2 K, whereas in # 2 and # 3 the nearest-neighbour hopping (NNH) conductivity is ob-served between 3−4.2 K and between 1.5−4.2 K, respectively. Eventually, in high magnetic fields of Bup to ~ 15 T and T ≤ 4.2 K only the NNH conductivity is observed in all investi-gated samples. The analysis of the resistivity data yields the set of microscopic parameters, such as the localization radius, the widths of the Coulomb gap and of the impurity band, the density of the localized states and the anisotropy coefficients, as well as the values of the acceptor concentration and the di-electric permittivity, Belgorod State University