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We report a frequency-dependent output conductance of partially depleted SOI MOSFET's. For high-frequency analog applications, the output conductance is less than half and the dynamic range of Vd is two times higher than the dc I-V characteristics would indicate. A simple physical model for the phenomenon that involves a phenomenological body charging capacitance and can fit data within 10% is presented.

We report a frequency-dependent output conductance of partially depleted SOI MOSFET's. For high-frequency analog applications, the output conductance is less than half and the dynamic range of Vd is two times higher than the dc I-V characteristics would indicate. A simple physical model for the phenomenon that involves a phenomenological body charging capacitance and can fit data within 10% is presented.

We report a frequency-dependent output conductance of partially depleted SOI MOSFET's. For high-frequency analog applications, the output conductance is less than half and the dynamic range of Vd is two times higher than the dc I-V characteristics would indicate. A simple physical model for the phenomenon that involves a phenomenological body charging capacitance and can fit data within 10% is presented.