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The photoelectric properties of p(+)-n junctions that were based on 4H-SiC ion-implanted with aluminum and were formed in lightly doped n-type epitaxial layers grown by chemical vapor deposition were studied. It is shown that such photodetectors combine in full measure the advantages of photostructures formed on the basis of Schottky barriers and epitaxial p-n junctions. The results of the theoretical calculation of spectral characteristics of ion-implanted photodetectors are in good agreement with experimental data. The structures feature an efficiency of collection of nonequilibrium charge carriers close to 100% in the spectral range of the photon energies of 3.5-4.25 eV., QC 20100525

The results of studying 4H-SiC p(+)-n junctions ion-implanted with aluminum as detectors of high-energy particles are reported. The junctions were formed in SiC epitaxial films grown by chemical vapor deposition. The concentration of uncompensated donors was (3-5) x 10(15) cm(-3), and the charge-carrier diffusion length was L-p = 2.5 mum. The detectors were irradiated with 4.8-5.5-MeV alpha particles at 20degreesC. The efficiency of collection of the induced charge was as high as 0.35. The possibilities of operating SiC detectors at elevated temperatures (similar to500degreesC) are analyzed., QC 20100525