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Tetragonal CuMnAs is a room temperature antiferromagnet with an electrically reorientable Néel vector and a Dirac semimetal candidate. Direct measurements of the electronic structure of single-crystalline thin films of tetragonal CuMnAs using angle-resolved photoemission spectroscopy (ARPES) are reported, including Fermi surfaces (FS) and energy-wavevector dispersions. After correcting for a chemical potential shift of ≈− 390 meV (hole doping), there is excellent agreement of FS, orbital character of bands, and Fermi velocities between the experiment and density functional theory calculations. In addition, 2×1 surface reconstructions are found in the low energy electron diffraction (LEED) and ARPES. This work underscores the need to control the chemical potential in tetragonal CuMnAs to enable the exploration and exploitation of the Dirac fermions with tunable masses, which are predicted to be above the chemical potential in the present samples.

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antifer-romagnetic CuMnAs in which imaging by x-ray photoemission reveals the presence of magnetic textures down to nanoscale, reaching the detection limit of this established microscopy in antiferromagnets. We achieve atomic resolution by using differential phase-contrast imaging within aberration-corrected scanning transmission electron microscopy. We identify abrupt domain walls in the antiferromagnetic film corresponding to the Neel order reversal between two neighboring atomic planes. Our work stimulates research of magnetic textures at the ultimate atomic scale and sheds light on electrical and ultrafast optical antiferromagnetic devices with magnetic field-insensitive neuromorphic functionalities.

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antifer-romagnetic CuMnAs in which imaging by x-ray photoemission reveals the presence of magnetic textures down to nanoscale, reaching the detection limit of this established microscopy in antiferromagnets. We achieve atomic resolution by using differential phase-contrast imaging within aberration-corrected scanning transmission electron microscopy. We identify abrupt domain walls in the antiferromagnetic film corresponding to the Neel order reversal between two neighboring atomic planes. Our work stimulates research of magnetic textures at the ultimate atomic scale and sheds light on electrical and ultrafast optical antiferromagnetic devices with magnetic field-insensitive neuromorphic functionalities.

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antifer-romagnetic CuMnAs in which imaging by x-ray photoemission reveals the presence of magnetic textures down to nanoscale, reaching the detection limit of this established microscopy in antiferromagnets. We achieve atomic resolution by using differential phase-contrast imaging within aberration-corrected scanning transmission electron microscopy. We identify abrupt domain walls in the antiferromagnetic film corresponding to the Neel order reversal between two neighboring atomic planes. Our work stimulates research of magnetic textures at the ultimate atomic scale and sheds light on electrical and ultrafast optical antiferromagnetic devices with magnetic field-insensitive neuromorphic functionalities.

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antifer-romagnetic CuMnAs in which imaging by x-ray photoemission reveals the presence of magnetic textures down to nanoscale, reaching the detection limit of this established microscopy in antiferromagnets. We achieve atomic resolution by using differential phase-contrast imaging within aberration-corrected scanning transmission electron microscopy. We identify abrupt domain walls in the antiferromagnetic film corresponding to the Neel order reversal between two neighboring atomic planes. Our work stimulates research of magnetic textures at the ultimate atomic scale and sheds light on electrical and ultrafast optical antiferromagnetic devices with magnetic field-insensitive neuromorphic functionalities.

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antiferromagnetic CuMnAs in which imaging by x-ray photoemission reveals the presence of magnetic textures down to nanoscale, reaching the detection limit of this established microscopy in antiferromagnets. We achieve atomic resolution by using differential phase-contrast imaging within aberration-corrected scanning transmission electron microscopy. We identify abrupt domain walls in the antiferromagnetic film corresponding to the Néel order reversal between two neighboring atomic planes. Our work stimulates research of magnetic textures at the ultimate atomic scale and sheds light on electrical and ultrafast optical antiferromagnetic devices with magnetic field-insensitive neuromorphic functionalities.

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antifer-romagnetic CuMnAs in which imaging by x-ray photoemission reveals the presence of magnetic textures down to nanoscale, reaching the detection limit of this established microscopy in antiferromagnets. We achieve atomic resolution by using differential phase-contrast imaging within aberration-corrected scanning transmission electron microscopy. We identify abrupt domain walls in the antiferromagnetic film corresponding to the Neel order reversal between two neighboring atomic planes. Our work stimulates research of magnetic textures at the ultimate atomic scale and sheds light on electrical and ultrafast optical antiferromagnetic devices with magnetic field-insensitive neuromorphic functionalities.

We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs, and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.

Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave functions) which has so far been tested only to a limited extent. We show that AC permittivity (obtained from ellipsometry) and UV photoelectron spectra agree with density functional calculations. Together with the x-ray diffraction and precession electron diffraction tomography, our analysis confirms recent theoretical claim [Phys.Rev.B 96, 094406 (2017)] that copper atoms occupy lattice positions in the basal plane of the tetragonal unit cell.

This thesis describes the characterisation of GaMnAs, related compounds and heterostructures. GaMnAs and other (III,Mn)V compounds have provided many interesting insights into fundamental physics, and are of considerable potential interest commercially in the field of spintronics. This study examines a set of samples grown by molecular beam epitaxy and characterised using several techniques: primarily this study makes use of the x-ray absorption techniques, x-ray magnetic circular dichroism(XMCD) and x-ray absorption spectroscopy (XAS). In addition, x-ray diffraction (XRD), transport measurements and super conducting quantum interference device (SQUID) magnetometry were used as complimentary techniques. GaMnAs layers with epitaxial Fe grown on top, are shown to have a sub-nanometre interfacial layer which remains polarised above room temperature. A detailed understanding of these systems is obtained by applying the element specific nature of XMCD in combination with two different probing depths to explore separately the nature of the coupling of the bulk and interfacial region. The coupling between the interfacial layer and the Fe is shown to be strongly antiferromagnetic (AF). A weaker coupling is also shown to exist between the Fe and the bulk of the \gamnas layer below the Curie temperature (Tc). This coupling is also AF at low fields, leading to an exchange bias for the entire layer. Doping of GaMnAs with P is shown to have several effects on the magnetic properties of the GaMnAs layer. Changes in the layer strain are observed using high resolution XRD. This strain also manifests itself in the Mn L_2,3 XMCD spectra and the relationship between the two is shown to be linear. A pronounced effect on the magnetic anisotropy is observed using SQUID measurements, with the easy axis switching from in-plane, in the compressively strained GaMnAs, to out-of-plane in the higher doped GaMnAsP layers. A decrease in total magnetic moment per Mn atom and Tc are observed with i

Spin-lattice coupling is one of the most prominent interactions mediating response of spin ensemble to ultrafast optical excitation. Here we exploit optically generated coherent and incoherent phonons to drive coherent spin dynamics, i.e. precession, in thin films of magnetostrictive metal Galfenol. We demonstrate unambiguously that coherent phonons, also seen as dynamical strain generated due to picosecond lattice temperature raise, give raise to magnetic anisotropy changes of the optically excited magnetic film; and this contribution may be comparable to or even dominate over the contribution from the temperature increase itself, considered as incoherent phonons.

This thesis describes the characterisation of GaMnAs, related compounds and heterostructures. GaMnAs and other (III,Mn)V compounds have provided many interesting insights into fundamental physics, and are of considerable potential interest commercially in the field of spintronics. This study examines a set of samples grown by molecular beam epitaxy and characterised using several techniques: primarily this study makes use of the x-ray absorption techniques, x-ray magnetic circular dichroism(XMCD) and x-ray absorption spectroscopy (XAS). In addition, x-ray diffraction (XRD), transport measurements and super conducting quantum interference device (SQUID) magnetometry were used as complimentary techniques. GaMnAs layers with epitaxial Fe grown on top, are shown to have a sub-nanometre interfacial layer which remains polarised above room temperature. A detailed understanding of these systems is obtained by applying the element specific nature of XMCD in combination with two different probing depths to explore separately the nature of the coupling of the bulk and interfacial region. The coupling between the interfacial layer and the Fe is shown to be strongly antiferromagnetic (AF). A weaker coupling is also shown to exist between the Fe and the bulk of the \gamnas layer below the Curie temperature (Tc). This coupling is also AF at low fields, leading to an exchange bias for the entire layer. Doping of GaMnAs with P is shown to have several effects on the magnetic properties of the GaMnAs layer. Changes in the layer strain are observed using high resolution XRD. This strain also manifests itself in the Mn L_2,3 XMCD spectra and the relationship between the two is shown to be linear. A pronounced effect on the magnetic anisotropy is observed using SQUID measurements, with the easy axis switching from in-plane, in the compressively strained GaMnAs, to out-of-plane in the higher doped GaMnAsP layers. A decrease in total magnetic moment per Mn atom and Tc are observed with i

This thesis describes the characterisation of GaMnAs, related compounds and heterostructures. GaMnAs and other (III,Mn)V compounds have provided many interesting insights into fundamental physics, and are of considerable potential interest commercially in the field of spintronics. This study examines a set of samples grown by molecular beam epitaxy and characterised using several techniques: primarily this study makes use of the x-ray absorption techniques, x-ray magnetic circular dichroism(XMCD) and x-ray absorption spectroscopy (XAS). In addition, x-ray diffraction (XRD), transport measurements and super conducting quantum interference device (SQUID) magnetometry were used as complimentary techniques. GaMnAs layers with epitaxial Fe grown on top, are shown to have a sub-nanometre interfacial layer which remains polarised above room temperature. A detailed understanding of these systems is obtained by applying the element specific nature of XMCD in combination with two different probing depths to explore separately the nature of the coupling of the bulk and interfacial region. The coupling between the interfacial layer and the Fe is shown to be strongly antiferromagnetic (AF). A weaker coupling is also shown to exist between the Fe and the bulk of the \gamnas layer below the Curie temperature (Tc). This coupling is also AF at low fields, leading to an exchange bias for the entire layer. Doping of GaMnAs with P is shown to have several effects on the magnetic properties of the GaMnAs layer. Changes in the layer strain are observed using high resolution XRD. This strain also manifests itself in the Mn L_2,3 XMCD spectra and the relationship between the two is shown to be linear. A pronounced effect on the magnetic anisotropy is observed using SQUID measurements, with the easy axis switching from in-plane, in the compressively strained GaMnAs, to out-of-plane in the higher doped GaMnAsP layers. A decrease in total magnetic moment per Mn atom and Tc are observed with i

This thesis describes the characterisation of GaMnAs, related compounds and heterostructures. GaMnAs and other (III,Mn)V compounds have provided many interesting insights into fundamental physics, and are of considerable potential interest commercially in the field of spintronics. This study examines a set of samples grown by molecular beam epitaxy and characterised using several techniques: primarily this study makes use of the x-ray absorption techniques, x-ray magnetic circular dichroism(XMCD) and x-ray absorption spectroscopy (XAS). In addition, x-ray diffraction (XRD), transport measurements and super conducting quantum interference device (SQUID) magnetometry were used as complimentary techniques. GaMnAs layers with epitaxial Fe grown on top, are shown to have a sub-nanometre interfacial layer which remains polarised above room temperature. A detailed understanding of these systems is obtained by applying the element specific nature of XMCD in combination with two different probing depths to explore separately the nature of the coupling of the bulk and interfacial region. The coupling between the interfacial layer and the Fe is shown to be strongly antiferromagnetic (AF). A weaker coupling is also shown to exist between the Fe and the bulk of the \gamnas layer below the Curie temperature (Tc). This coupling is also AF at low fields, leading to an exchange bias for the entire layer. Doping of GaMnAs with P is shown to have several effects on the magnetic properties of the GaMnAs layer. Changes in the layer strain are observed using high resolution XRD. This strain also manifests itself in the Mn L_2,3 XMCD spectra and the relationship between the two is shown to be linear. A pronounced effect on the magnetic anisotropy is observed using SQUID measurements, with the easy axis switching from in-plane, in the compressively strained GaMnAs, to out-of-plane in the higher doped GaMnAsP layers. A decrease in total magnetic moment per Mn atom and Tc are observed with i

Spin-lattice coupling is one of the most prominent interactions mediating response of spin ensemble to ultrafast optical excitation. Here we exploit optically generated coherent and incoherent phonons to drive coherent spin dynamics, i.e. precession, in thin films of magnetostrictive metal Galfenol. We demonstrate unambiguously that coherent phonons, also seen as dynamical strain generated due to picosecond lattice temperature raise, give raise to magnetic anisotropy changes of the optically excited magnetic film; and this contribution may be comparable to or even dominate over the contribution from the temperature increase itself, considered as incoherent phonons.

This thesis describes the characterisation of GaMnAs, related compounds and heterostructures. GaMnAs and other (III,Mn)V compounds have provided many interesting insights into fundamental physics, and are of considerable potential interest commercially in the field of spintronics. This study examines a set of samples grown by molecular beam epitaxy and characterised using several techniques: primarily this study makes use of the x-ray absorption techniques, x-ray magnetic circular dichroism(XMCD) and x-ray absorption spectroscopy (XAS). In addition, x-ray diffraction (XRD), transport measurements and super conducting quantum interference device (SQUID) magnetometry were used as complimentary techniques. GaMnAs layers with epitaxial Fe grown on top, are shown to have a sub-nanometre interfacial layer which remains polarised above room temperature. A detailed understanding of these systems is obtained by applying the element specific nature of XMCD in combination with two different probing depths to explore separately the nature of the coupling of the bulk and interfacial region. The coupling between the interfacial layer and the Fe is shown to be strongly antiferromagnetic (AF). A weaker coupling is also shown to exist between the Fe and the bulk of the \gamnas layer below the Curie temperature (Tc). This coupling is also AF at low fields, leading to an exchange bias for the entire layer. Doping of GaMnAs with P is shown to have several effects on the magnetic properties of the GaMnAs layer. Changes in the layer strain are observed using high resolution XRD. This strain also manifests itself in the Mn L_2,3 XMCD spectra and the relationship between the two is shown to be linear. A pronounced effect on the magnetic anisotropy is observed using SQUID measurements, with the easy axis switching from in-plane, in the compressively strained GaMnAs, to out-of-plane in the higher doped GaMnAsP layers. A decrease in total magnetic moment per Mn atom and Tc are observed with i

Spin-lattice coupling is one of the most prominent interactions mediating response of spin ensemble to ultrafast optical excitation. Here we exploit optically generated coherent and incoherent phonons to drive coherent spin dynamics, i.e. precession, in thin films of magnetostrictive metal Galfenol. We demonstrate unambiguously that coherent phonons, also seen as dynamical strain generated due to picosecond lattice temperature raise, give raise to magnetic anisotropy changes of the optically excited magnetic film; and this contribution may be comparable to or even dominate over the contribution from the temperature increase itself, considered as incoherent phonons.

Spin-lattice coupling is one of the most prominent interactions mediating response of spin ensemble to ultrafast optical excitation. Here we exploit optically generated coherent and incoherent phonons to drive coherent spin dynamics, i.e. precession, in thin films of magnetostrictive metal Galfenol. We demonstrate unambiguously that coherent phonons, also seen as dynamical strain generated due to picosecond lattice temperature raise, give raise to magnetic anisotropy changes of the optically excited magnetic film; and this contribution may be comparable to or even dominate over the contribution from the temperature increase itself, considered as incoherent phonons.