1. Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser
- Author
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Wei Shi, Behnam Faraji, Mark Greenberg, Jesper Berggren, Yu Xiang, Mattias Hammar, Michel Lestrade, Zhi-Qiang Li, Z. M. Simon Li, and Lukas Chrostowski
- Subjects
Frequency response ,Materials science ,Physical model ,Computer simulation ,business.industry ,Transistor ,Physics::Optics ,Laser ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Vertical-cavity surface-emitting laser ,law.invention ,law ,Modulation ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Quantum - Abstract
A multiple quantum well (MQW) transistor vertical-cavity surface- emitting laser (T-VCSEL) is designed and numerically modeled. The impor- tant physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a signicant eect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the an- alytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.
- Published
- 2011
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