1. Novel two-stage method for the synthesis of silicon quantum dots embedded on ZnO matrix
- Author
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R. Rosas-Burgos, R. García-Gutierrez, D. Berman-Mendoza, Oscar E. Contreras, F. Romo-García, H. J. Higuera-Valenzuela, A. Ramos-Carrazco, and D. Cabrera-German
- Subjects
010302 applied physics ,Spin coating ,Photoluminescence ,Materials science ,business.industry ,Band gap ,Mechanical Engineering ,Silicon quantum dots ,chemistry.chemical_element ,02 engineering and technology ,Zinc ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Matrix (chemical analysis) ,X-ray photoelectron spectroscopy ,chemistry ,Mechanics of Materials ,Air annealing ,0103 physical sciences ,Optoelectronics ,General Materials Science ,0210 nano-technology ,business - Abstract
At the present work, a novel two-stage method for the synthesis of zinc oxide (ZnO) films with silicon quantum dots embedded (SiQDs-ZnO) is reported. The experimental procedure consisting on ZnO matrix produced by the sol-gel technique and silicon quantum dots (Si-QDs) synthesized by a green synthesis is described. The incorporation of the Si-QDs on the ZnO films was obtained by spin coating followed by a post-deposition air annealing at 400 °C. The XPS results show that the Si-QDs were successfully embedded in the ZnO matrix. The effect of the tunable bandgap (Eg) of the ZnO with the addition of Si-QDs was obtained which is consistent with the Burstein-Moss effect. The enhancement of the photoluminescence (PL) of the ZnO films with the increment of Si content is presented.
- Published
- 2018
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