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Interfacial two-dimensional electron gas (2DEG) formed at the perovskite-type oxide, such as SrTiO3, has attracted significant attention due to its properties of ferromagnetism, superconductivity, and its potential application in oxide-based low-power consumption electronics. Recent studies have investigated spin-to-charge conversion at the STO interface with different materials, which could affect the efficiency of this 2DEG interface. In this report, we presented an Ar^+ ion milling method to create a 2DEG at STO directly by inducing oxygen vacancies. To quantify the spin-to-charge conversion of this interface, we measured the angular-dependent spin-torque ferromagnetic resonance (ST-FMR) spectra, revealing an unconventional spin polarization at the interface of Argon ion-milled STO and NiFe. Furthermore, a micromagnetic simulation for angular-dependent spin-torque ferromagnetic resonance (ST-FMR) has been performed, confirming the large unconventional spin polarization at the interface.

The impurity incorporation in host high-spin orbit coupling materials like platinum has shown improved charge-to-spin conversion by modifying the up-spin and down-spin electron trajectories by bending or skewing them in opposite directions. This enables efficient generation, manipulation, and transport of spin currents. In this study, we irradiate the platinum with non-focus dense plasma to incorporate the oxygen ion species. We systematically analyze the spin Hall angle of the oxygen plasma irradiated Pt films using spin torque ferromagnetic resonance. Our results demonstrate a 2.4 times enhancement in the spin Hall effect after plasma treatment of Pt as compared to pristine Pt. This improvement is attributed to the introduction of disorder and defects in the Pt lattice, which enhances the spin-orbit coupling and leads to more efficient charge-to-spin conversion without breaking the spin-orbit torque symmetries. Our findings offer a new method of dense plasma-based modification of material for the development of advanced spintronic devices based on Pt and other heavy metals.

Interfacial two-dimensional electron gas (2DEG), especially the SrTiO3-based ones at the unexpected interface of insulators, have emerged to be a promising candidate for efficient charge-spin current interconversion. In this article, to gain insight into the mechanism of the charge-spin current interconversion at the oxide-based 2DEG, we focused on conducting interfaces between insulating SrTiO3 and two types of aluminium-based amorphous insulators, namely SrTiO3/AlN and SrTiO3/Al2O3, and estimated their charge-spin conversion efficiency, {\theta}_cs. The two types of amorphous insulators were selected to explicitly probe the overlooked contribution of oxygen vacancy to the {\theta}_cs. We proposed a mechanism to explain results of spin-torque ferromagnetic resonance (ST-FMR) measurements and developed an analysis protocol to reliably estimate the {\theta}_cs of the oxide based 2DEG. The resultant {\theta}_cs/t, where t is the thickness of the 2DEG, were estimated to be 0.244 nm-1 and 0.101 nm-1 for the SrTiO3/AlN and SrTiO3/Al2O3, respectively, and they are strikingly comparable to their crystalline counterparts. Furthermore, we also observe a large direct current modulation of resonance linewidth in SrTiO3/AlN samples, confirming its high {\theta}_cs and attesting an oxygen-vacancy-enabled charge-spin conversion. Our findings emphasize the defects' contribution to the charge-spin interconversion, especially in the oxide-based low dimensional systems, and provide a way to create and enhance charge-spin interconversion via defect engineering.

The atomically flat interface of the Y3Fe5O12 (YIG) thin film and the Gd3Ga5O12 (GGG) substrate plays a vital role in obtaining the magnetization dynamics of YIG below and above the anisotropy field. Here, magnetoimpedance (MI) is used to investigate the magnetization dynamics in fully epitaxial 45 nm YIG thin films grown on the GGG (001) substrates using a copper strip coil in the MHz–GHz frequency region. The resistance (R) and reactance (X), which are components of impedance (Z), allow us to probe the absorptive and dispersive components of the dynamic permeability, whereas a conventional spectrometer only measures the field derivative of the power absorbed. The distinct excitation modes arising from the resonance in the uniform and dragged magnetization states of YIG are respectively observed above and below the anisotropy field. The magnetodynamics clearly shows the visible dichotomy between two resonant fields below and above the anisotropy field and its motion as a function of the direction of the applied magnetic field. A low value of a damping factor of ∼4.7 – 6.1 × 10–4 is estimated for uniform excitation mode with an anisotropy field of 65 ± 2 Oe. Investigation of below and above anisotropy field-dependent magnetodynamics in the low-frequency mode can be useful in designing the YIG-based resonators, oscillators, filters, and magnonic devices.

Femtosecond laser-induced photoexcitation of ferromagnet (FM)/heavy metal (HM) heterostructures have attracted attention by emitting broadband terahertz frequencies. The phenomenon relies on the formation of ultrafast spin current, which is largely attributed to the direct photoexcitation of the FM layer. However, we reveal that during the process, the FM layer also experiences a secondary excitation led by the hot electrons from the HM layer that travel across the FM/HM interface and transfer additional energy in the FM. Thus, the generated secondary spins enhance the total spin current formation and lead to amplified spintronic terahertz emission. The results also emphasize the significance of the secondary spin current, which even exceeds the primary spin currents when FM/HM heterostructures with thicker HM are used. An analytical model is developed to provide deeper insights into the microscopic processes within the individual layers, underlining the generalized ultrafast superdiffusive spin-transport mechanism., Comment: 20 pages, 3 figures

Interfacial two-dimensional electron gases (2DEG), especially the SrTiO3-based ones at the unexpected interface of insulators, have emerged to be promising candidates for efficient charge–spin interconversion. Herein, to gain insight into the mechanism of the charge–spin interconversion, quasi-2DEG between insulating SrTiO3 and two types of aluminum-based amorphous insulators, namely SrTiO3/AlN and SrTiO3/Al2O3, are focused on and their charge-to-spin conversion efficiency is estimated. The two types of amorphous insulators are selected to probe the overlooked contribution of oxygen vacancy. A mechanism to explain the results of spin–torque ferromagnetic resonance measurements is proposed and an analysis protocol to reliably estimate in quasi-2DEG is developed. The resultant, thickness of the 2DEG, is estimated to be 0.244 and 0.101 nm−1 for SrTiO3/AlN and SrTiO3/Al2O3, respectively, which are strikingly comparable to their crystalline counterparts. Furthermore, a large direct current modulation of resonance linewidth in SrTiO3/AlN samples is developed, confirming and attesting an oxygen vacancy-enabled charge–spin conversion. The findings emphasize the defects' contribution-, especially in oxide-based low-dimensional systems, and provide a way to create and enhance charge–spin interconversion via defect engineering. Ministry of Education (MOE) National Research Foundation (NRF) Submitted/Accepted version U.S. and A.D. contributed equally to this work. Y.F. and H.A. would like toacknowledge JSPS Grant-in-Aid (KAKENHI no. 22K04198), KIOXIACorporation and Iketani Science and Technology Foundation. X.R.W.acknowledges support from Academic Research Fund Tier 2 (grant no.MOE-T2EP50220-0005) and Tier 3 (grant no. MOE2018-T3-1-002) fromSingapore Ministry of Education. R.M., S.G., and R.S.R. would like toacknowledge the support from the Ministry of Education, Singapore, grantno. MOE2019-T2-1-058 (ARC 1/19 RSR). R.M., S.G., R.S.R., and X.R.W.acknowledges support from the National Research Foundation (NRF),Singapore, under its 21st Competitive Research Programs (CRP grantno. NRF-CRP21-2018-0003).

Electrical control of photogenerated THz spin current pulses from a spintronic emitter has been at the forefront for the development of scalable, cost-efficient, wideband opto-spintronics devices. Artificially combined ferroelectric and ferromagnet heterostructure provides the potential avenue to control the spin dynamics efficiently utilizing the magnetoelectric coupling. The demonstration of the electric field control of spin dynamics has so far been limited up to gigahertz frequencies. Here, we demonstrate the electric field mediated piezoelectric strain control of photogenerated THz spin current pulse from a multiferroic spintronic emitter. The phase reversal of the THz spin current pulse is obtained from the combined effect of piezoelectric strain and a small constant magnetic field applied opposite to the initial magnetization of the ferromagnet. The piezoelectric strain-controlled phase switching of THz spin current thus opens a door to develop efficient strain engineered scalable on-chip THz spintronics devices., Comment: 17 pages, 4 figures

Directional specific control on the generation and propagation of magnons is essential for designing future magnon-based logic and memory devices for low power computing. The epitaxy of the ferromagnetic thin film is expected to facilitate anisotropic linewidths, which depend on the crystal cut and the orientation of the thin film. Here, we have shown the growth-induced magneto-crystalline anisotropy in 40 nm epitaxial yttrium iron garnet (YIG) thin films, which facilitate cubic and uniaxial in-plane anisotropy in the resonance field and linewidth using ferromagnetic resonance measurements. The growth-induced cubic and non-cubic anisotropy in epitaxial YIG thin films are explained using the short-range ordering of the Fe3+ cation pairs in octahedral and tetrahedral sublattices with respect to the crystal growth directions. This site-preferred directional anisotropy enables an anisotropic magnon–magnon interaction and opens an avenue to precisely control the propagation of magnonic current for spin-transfer logics using YIG-based magnonic technology. Ministry of Education (MOE) Nanyang Technological University National Research Foundation (NRF) Published version This work was supported by the Ministry of Education (MOE) through Grant Nos. MOE2017-T2-2-129, and MOE2019-T2-1-058 and the National Research Foundation (NRF), Singapore through grant number NRF-CRP21-2018-0003. Y.F. acknowledges the Japan Society for the Promotion of Science for supporting this work through Grant No. 18H01862. M.D. acknowledges the financial support from Nanyang Technological University start-up Grant No. M4081924 and MOE tier 1 through Grant No. 2019-T1-001- 066.

Directional specific control on the generation and propagation of magnons is essential for designing future magnon-based logic and memory devices for low power computing. The epitaxy of the ferromagnetic thin film is expected to facilitate anisotropic linewidths, which depend on the crystal cut and the orientation of the thin film. Here, we have shown the growth-induced magneto-crystalline anisotropy in 40 nm epitaxial yttrium iron garnet (YIG) thin films, which facilitate cubic and uniaxial in-plane anisotropy in the resonance field and linewidth using ferromagnetic resonance measurements. The growth-induced cubic and non-cubic anisotropy in epitaxial YIG thin films are explained using the short-range ordering of the Fe3þ cation pairs in octahedral and tetrahedral sublattices with respect to the crystal growth directions. This site-preferred directional anisotropy enables an anisotropic magnon–magnon interaction and opens an avenue to precisely control the propagation of magnonic current for spin-transfer logics using YIG-based magnonic technology.

Damping-like torque (DLT) arising from the spin Hall effect (SHE) in heavy metals and their alloys has been widely explored for applications in spin–orbit torque MRAM, auto-oscillations, spin waves, and domain wall motion. In conventional materials, the DLT efficiency is limited by intrinsic properties, while attaining strong spin–orbit coupling and higher spin-charge interconversion, with no compromise to electric properties, is the need of the hour. In this Letter, we report more than 3.5 times increase in DLT efficiency, θDL, of modified Pt-oxide by employing a better approach of low energy 20 keV O+ ion implantation. The highest fluence of O+ implantation (1 × 1017 ions cm−2) in Pt enhanced the DLT efficiency from 0.064 to 0.230 and improved the spin transmission for a smaller trade-off in the longitudinal resistivity (ρPt to ρPt−Oxide) from 55.4 to 159.5 μΩ cm, respectively. The transverse spin Hall resistivity, ρSH, is found to be proportional to the square of the longitudinal resistivity, i.e., ρimpSH∝ρ2imp, implying that the enhanced SHE in O-implanted Pt is due to a side-jumping mechanism. Further, no break in the twofold as well as mirror symmetry of torques from the O-implanted Pt allows the use of spin-torque ferromagnetic resonance-based line shape analysis to quantify such torques.