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Chemical solution deposition (CSD) of BaTiO3 (BT) or BT-based thin films relies on using a carboxylic acid and alcohol as the solvents for alkaline-earth carboxylate and transition-metal alkoxide, respectively; however, the esterification reaction of the solvents may lead to in-situ water formation and precipitation. To avoid such an uncontrolled reaction, we developed a route in which ethylene glycol (EG) is used as the solvent for Ba-acetate. The EG-based BT coating solutions are stable for at least a few months. The thermal decomposition of the BT xerogel obtained by drying the EG-based solutions depends on the choice of the solvent for the Ti-alkoxide as well: in the case of EG and 2-methoxyethanol solvents carbon residues are removed at only about 1100 °C, while in the case of ethanol it is concluded at about 700 °C. About 100 nm thick BT films derived from the EG-ethanol solution deposited on platinized silicon reveal dense, crack-free columnar microstructure. They exhibit local ferro- and piezoelectric properties. The macroscopic polarization-electric field loops were obtained up to a quite high electric field of about 2.4 MV/cm. The EG-ethanol based CSD route is a viable alternative to the established acetic acid–alcohol route for BT and BT-based films.

Dissociation and adsorption of water on ferroelectric oxide surfaces play important role in the processes of screening and switching dynamics of ferroelectric polarization, as well as in catalytic processes which can be additionally coupled with light, temperature or vibration stimuli. In this work, we present XPS study of ferroelectric BaTiO3 thin films and determine the entanglement between surface chemistry, polarization direction and stability, by observing changes upon time exposure to environmental conditions, heating in O2 atmosphere and irradiation in vacuum. We devote special attention to Ba 3d spectral region and identify two different oxidation states of O atoms in the compounds of Ba. While this second specie was generally attributed to Ba in surface compounds where it has different oxygen coordination than in the bulk, based on the XPS results of oxygen annealed thin films, we demonstrate that this so far neglected component, corresponds to barium peroxide (BaO2) and identify it as important active specie for the study of screening mechanisms closely related with catalytic activity present in this ferroelectric material. Finally, we report on chemically assisted polarization switching in thin films induced by heating in vacuum or exposure to X-Ray radiation due to the formation of positive surface electric field created by oxygen or electron vacancies, respectively., Financial support was obtained under projects from the Spanish Ministerio de Ciencia e Innovación (MICINN) under projects FIS2015-73932-JIN, PID2019-109931GB-I00 and PID2019-110907GB-I00. In addition, this work was partially funded by 2017-SGR-579 from the Generalitat de Catalunya. The ICN2 is funded by the CERCA programme/Generalitat de Catalunya. The ICN2 is supported by the Severo Ochoa Centres of Excellence Programme, funded by the Spanish Research Agency (AEI, grant no. SEV-2017-0706) and ICMAB is supported by the Severo Ochoa Centres of Excellence Programme, funded by the Spanish Research Agency (AEI, grant no. CEX2019-000917-S). I. S. acknowledges support of the Secretaria d'Universitats i Recerca - Departament d'Empresa i Coneixement - Generalitat de Catalunya and the European Social Fund (ESF) (FI grant reference 2020 FI_B2 00157).

The switching dynamics of ferroelectric polarization under electric fields depends on the availability of screening charges in order to stabilize the switched polarization. In ferroelectrics, thin films with exposed surfaces investigated by piezoresponse force microscopy (PFM), the main source of external screening charges is the atmosphere and the water neck, and therefore relative humidity (RH) plays a major role. Here, it is shown how the dynamic writing of domains in BaTiO3 thin films changes by varying scanning speeds in the range of RH between 2.5% and 60%. The measurements reveal that the critical speed for domain writing, which is defined as the highest speed at which electrical writing of a continuous stripe domain is possible, increases non-monotonically with RH. Additionally, the width of line domains shows a power law dependence on the writing speed, with a growth rate coefficient decreasing with RH. The size of the written domains at a constant speed as well as the creep-factor μ describing the domain wall kinetics follow the behavior of water adsorption represented by the adsorption isotherm, indicating that the screening mechanism dominating the switching dynamics is the thickness and the structure of adsorbed water structure and its associated dielectric constant and ionic mobility., The authors want to acknowledge technical support from I. Gaponenko on the installation of the low-noise humidity controller. Financial support was obtained under projects from the Spanish Ministerio de Ciencia e Innovacion (MICINN) under projects PID2019-108573GB-C21, PID2019-109931GB-I00, and PID2019-110907GB-I00. In addition, this work was partially funded by 2017-SGR-579 from the Generalitat de Catalunya. The ICN2 was funded by the CERCA programme / Generalitat de Catalunya. The ICN2 was supported by the Severo Ochoa Centres of Excellence Programme, funded by the Spanish Research Agency (AEI, Grant no. SEV-2017-0706). The ICMAB was supported by the “Severo Ochoa” Program for Centers of Excellence in R&D (CEX2019-000917-S). I.S. acknowledges support of the Secretaria d'Universitats i Recerca - Departament d'Empresa i Coneixement - Generalitat de Catalunya and the European Social Fund (ESF) (FI grant reference 2020 FI_B2 00157).

Barium titanate (BaTiO3) thin films have been prepared using the spray pyrolysis method. The films were deposited onto a glass substrate at varying substrate temperature ranging from 250 to 350 °C with the interval of 50 °C. The structural, morphological, electrical and dielectric properties of the deposited films have been studied. The X-ray diffraction pattern confirmed the polycrystalline nature of the films with a cubic crystal structure. X-ray photoelectron spectroscopy (XPS) showed a good agreement of the thin films stoichiometry with BaTiO3. A presence of Ba, Ti and O in the BaTiO3 thin films was observed by energy dispersive X-ray analysis. The scanning electron microscopy (SEM) showed the heterogeneous distribution of cubical grains all over the substrate. The grain size decreased with an increase in substrate temperature. The dielectric constant and dielectric loss showed the dispersion behaviour as a function of frequency, measured in the frequency range of 20 Hz to 1 MHz. The AC conductivity (σac) measurement showed the linear nature of obtained films, which confirms conduction mechanism due to small polarons. Impedance spectroscopy has been used to study the electrical behaviour of BaTiO3 ferroelectric thin films. The ferroelectric hysteresis loop has been recorded at room temperature.

In this work, 150 nm thick polycrystalline BaTiO3 (BTO) films were deposited on Pt/TiO2/SiO2/Si substrate by ion beam assisted sputter deposition technique. The bias voltage dependent resistive switching (RS) and ferroelectric polarization characteristics of Au/BTO/Pt devices are investigated. The devices display the stable bipolar RS characteristics without an initial electroforming process. Fittings to current–voltage (I–V) curves suggest that low and high resistance states are governed, respectively, by filamentary model and trap controlled space charge limited conduction mechanism, where the oxygen vacancies act as traps. Presence of oxygen vacancies is evidenced from the photoluminescence spectrum. The devices also display P–V loops with remnant polarization (Pr) of 5.7 μC/cm2 and a coercive electric field (Ec) of 173.0 kV/cm. The coupling between the ferroelectric polarization and RS effect in BTO films is demonstrated., This study has been partiallSFRH/BPD/y funded by: (i) Project PEST-C/FIS/ UI0607/2011 founded by Portuguese Foundation for Science and Technology (FCT); (ii) European COST Action MP1308-TO-BE. The authors J.P.B.S., K.C.S. and K.K. are grateful for financial support through the FCT Grants 92896/2013, SFRH/BPD/68489/ 2010 and SFRH/BPD/87215/2012, respectively. The authors would also like to thank Engineer José Santos for technical support at Thin Films Laboratory.

Epitaxial strain in ferroelectric films offers the possibility to enhance the piezoelectric performance utilizing low crystal symmetries and high density of domain walls. Ferroelectric BaTiO3 has been predicted to order in a variety of phases and domain configurations when grown under low strain on low mismatched substrates, but little experimental evidence of that region of the phase diagram exist. Here, epitaxial BaTiO3 thin films are grown on NdScO3 substrates under ≈0.1% strain. A monoclinic ca1/ca2 phase, with 90° periodic in-plane domain configuration and small additional out-of-plane component of polarization, is stabilized at room temperature and investigated using piezoelectric force microscopy and X-ray diffraction. Above 50 °C, this phase is transformed into an a/c phase with alternating in-plane and out-of-plane polarizations and forming zigzag domain walls between up-polarized and down-polarized superdomains. Both types of domain patterns are highly anisotropic, giving rise to very long domain walls. Above 130 °C, the paraelectric phase is observed. The occurrence of a phase transition close to room temperature, a low symmetry ca1/ca2 phase, and the formation of periodic domains make of this material a promising candidate for high piezoelectric response., Parts of this research were carried out at the light source Petra III at DESY, a member of the Helmholtz Association (HGF). Work at ICN2 was supported by the Severo Ochoa Excellence programme.