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International audience; This paper reports the design and simulation of 10 GHz VCO based on RF MEMS solenoid inductor. We have investigated four RF MEMS solenoid inductors using FEM software. Indeed, we have studied the effect of different dielectric substrate and metallic coil on inductors responses. Higher performances are obtained using copper coil and SU8 dielectric substrate: SRF= 20.8 GHz, Qmax= 60.9, and L = 2.6 nH at 10 GHz. Therefore, we have designed and investigated a cross-coupled CMOS VCO based on the best RF MEMS solenoid inductor. The obtained results show a wide tuning range TR = 46% comprised between 10 GHz and 14.6 GHz, and a good linearity of frequency variation in response of control voltage. Moreover, output signals present a high voltage upper than 1.2 V and a low phase-noise PN =-102.37 dBc/Hz at 1 MHz. In addition, the spectral analyze show that output peak power reaches 14.56 dBm at a center frequency of 10 GHz and the second harmonic is less than-58.9 dBm. These results prove high spectral signal ability of the proposed RF MEMS CMOS VCO at 10 GHz.

In this paper, a voltage-controlled bandpass filter employing tunable active inductor for VHF and UHF applications is presented. In order to provide a systematic approach to the realization of tunable active filters with high selectivity, low power consumption and small chip area, several optimization techniques and reconfiguration methods are adopted in this design. Designed with 0.13μm CMOS technology, the presented BPF prototype occupies a 0.00025 mm2area with pads, draws 2.34/3.45 mA from 1- V voltage supply for an operating center frequency from 145.2 MHz up to 436.2 MHz respectively, and demonstrates 1-dB compression points respectively of 1.23/2.67 dBm. For this tuning, the transmission loss are between −3.52 dB (UHF) and 14.77 dB (VHF) with a minimum noise figure varying respectively from 1.77 up to 1.82 dB.

In this paper, a fully CMOS bandpass filter with wide tunable frequency band suitable for radiofrequency (RF) and microwave applications is presented. The circuit has been realized in 130 nm CMOS technology using differential cascode grounded active inductor in place of spiral inductors, significantly improving the overall performances of the filter. The proposed design achieves a tuning range about 300% around 2 GHz indicating a very high slope factor. The filter draws between 3.68 and 6.44 mW from 1 V power supply, while attaining a maximum voltage gain of 33.45 dB at 1.84 GHz, a quality factor of 76.66 and a noise figure of 14.93 dB. It achieves a 1-dB compression point of −1.5 dBm and a surface area of only $(427\text{x}576)\mu \text{m}^{2}$.

International audience; This paper presents a wide band RF MEMS VCO operating at 10 GHz. The designed VCO is based on high performances RF MEMS solenoid inductor. We have used HFSS software for design and analysis of different RF MEMS solenoid inductors. Best performances are obtained using SU8 dielectric substrate and copper coil: Qmax= 60.9, L = 2.6 nH at 10 GHz, and SRF= 20.8 GHz. Moreover, we have investigated the time domain and the frequency responses of our RF MEMS VCO. The obtained results show symmetrical sinusoid signals with high voltage outputs upper than 1.2 V and a low phase-noise PN =-102.37 dBc/Hz at 1 MHz. In addition, the frequency band is comprised between 10.09 GHz and 14.6 GHz leading to a wide tuning range of TR=44.69%.

International audience; This paper presents design and simulation of tunable microwave capacitor based on microfluidic actuation. The structure modeling shows an important variation of electric field and current distribution following the DI water displacement in microchannels. In addition, the capacitance value is comprised between Cmin = 0.11 pF and Cmax = 5.76 pF allowing a very wide variation that reaches Tr = 5136% at 4.5 GHz. Furthermore, the resonant frequency ranges from 5.67 GHz to 19.81 GHz and we obtain a broad band ability higher than 240%. The maximum quality factor value Qmax = 84.27 results when the capacitor is empty and degrades to Qmin = 3.99 when it is fully filled with DI water at 4.5 GHz.

In this paper, a modified CCCII is presented. We have used a current mirror with low supply voltage. This circuit is operated at low supply voltage of ±1V. Tspice simulations for TSMC 0.18μm CMOS Technology has shown that the current and voltage bandwidth are respectively 3.34GHz and 4.37GHz, and parasitic resistance at port X has a value of 169.320 for a control current of 120μA. In order to realize this circuit, we have implemented in this first step a universal current mode filter where the frequency can reach the 134.58MHz. In the second step, we have implemented two simulated inductors: one floating and the other grounded. These two inductors are operated in high frequency and variable depending on bias current I0. Finally, we have used the two last inductors respectively to implement two sinusoidal oscillators domains of frequencies respectively: [470MHz, 692MHz], and [358MHz, 572MHz] for bias currents I0 [80μA, 350μA].

This paper presents a low-voltage low-power differential linear transconductor with near rail-to-rail input swing. Based on the current-mirror OTA topology, the proposed transconductor combines the Flipped Voltage Follower (FVF) technique to linearize the transconductor behavior that leads to class- AB linear operation and the virtual transistor technique to lower the effective threshold voltages of the transistors which offers an advantage in terms of low supply requirement. Design of the OTA has been discussed. It operates at supply voltages of about ±0.8V. Simulation results for 0.18μm TSMC CMOS technology show a good input range of 1Vpp with a high DC gain of 81.53dB and a total harmonic distortion of -40dB at 1MHz for an input of 1Vpp. The main aim of this paper is to present and compare new OTA design with high transconductance, which has a potential to be used in low voltage applications., {"references":["Tien-Yu Lo and Chung-Chih Hung, \"A wide tuning range Gm-C\ncontinuous- time analog filter,\" IEEE Trans.Circuits Syst. I, vol. 54, no.\n4, pp.713-722, 2007.","J. Ramirez-Angulo, R.G. Carvajal, A. Torralba, J. Galan, A.P. Vega-\nLeal and J. Tombs, \"The Flipped Voltage Follower: A useful cell for low\nvoltage low power circuit design,\" IEEE Int, Symp. on Circuits and\nSystems, vol.3, pp. 615-618, 2002.","Markus Helfenstein, Qiuting Huang and Geoge S. Moschytz, \"90 dB, 90\nMHz, 30 mW CMOS OTA for a high capacitive load,\" International\nJournal of Circuit Theory and Application, Int. J. Circ. Theor. 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This PhD work presents a computationally efficient physics-based compact model for the Schottky barrier (SB) carbon nanotube field-effect transistor (CNTFET). This compact model includes a new analytical formulation of the channel charge, taking into account the influence of the source and drain SBs. Compact model simulation results (I–V characteristic and channel density of charge) as well as Monte Carlo simulation results, which are provided by a recent work, will be given and compared to each other and also to experimental data to validate the used approximations. Good agreement is observed over a large range of gate and drain biases. Furthermore, a scaling study is presented to examine the impact of technological parameters on the device figure of merit. Then, for the assessment of the SB on circuit performances, traditional logical circuits are designed using the SB-CNTFET compact model, and results are compared with a conventional CNTFET with zero-SB height. Finally, exploiting the particular properties of SB-CNTFETs, a three-valued static memory that is suitable for high density integration is presented. Keywords — Compact modelling, Schottky barrier carbon based transistor, Spice simulation, static memory cell, tunnelling, WKB., Afin de permettre le développement de modèles manipulables par les concepteurs, il est nécessaire de pouvoir comprendre le fonctionnement des nanotubes, en particulier le transport des électrons et leurs propriétés électroniques. C'est dans ce contexte général que cette thèse s'intègre. Le travail a été mené sur quatre plans : • Développement de modèles permettant la description des phénomènes physiques importants au niveau des dispositifs, • Expertise sur le fonctionnement des nano-composants permettant de dégager les ordres de grandeurs pertinents pour les dispositifs, les contraintes, la pertinence de quelques procédés de fabrication (reproductibilité, taux de défauts), • Collection de caractéristiques mesurées et développement éventuel d'expériences spécifiques, • Expertise et conception des circuits innovatifs pour l'électronique numérique avec ces nano-composants. Mots clés — Modélisation compacte, transistor Schottky à nanotube de carbone, simulation circuit, cellule mémoire SRAM, effet tunnel, WKB.