1. van der Waal Epitaxy of Flexible and Transparent VO2 Film on Muscovite
- Author
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Hong-Ji Lin, Chien I. Li, Ming-Wen Chu, Hsiao Wen Chen, Chih Ya Tsai, Heng Jui Liu, Jheng Cyuan Lin, Hsin Wei Huang, Hsiang Lin Liu, Po-Wen Chiu, Chun Hao Ma, and Ying-Hao Chu
- Subjects
Materials science ,Silicon ,General Chemical Engineering ,chemistry.chemical_element ,Nanotechnology ,02 engineering and technology ,engineering.material ,010402 general chemistry ,Epitaxy ,01 natural sciences ,symbols.namesake ,Electrical resistance and conductance ,Materials Chemistry ,business.industry ,Muscovite ,Heterojunction ,General Chemistry ,021001 nanoscience & nanotechnology ,Flexible electronics ,0104 chemical sciences ,chemistry ,symbols ,engineering ,Optoelectronics ,van der Waals force ,0210 nano-technology ,business ,Raman spectroscopy - Abstract
Vanadium dioxide (VO2) is a compelling candidate for next-generation electronics beyond conventional silicon-based devices due to the exhibition of a sharp metal–insulator transition. In this study, in order to realize functional VO2 film for flexible electronics, the growth of VO2 film directly on a transparent and flexible muscovite via van der Waals epitaxy is established. The heteroepitaxy and structural transition of VO2 films on muscovite are examined by a combination of high-resolution X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The unique metal–insulator transition of VO2 is further revealed with a change in electrical resistance over 103 and a more than 50% variation of optical transmittance. Furthermore, due to the nature of muscovite, the VO2/muscovite heterostructure possesses superior flexibility and optical transparence. The approach developed in this study paves an intriguing way to fabricate functional VO2 film for the applications in flexible electronics.
- Published
- 2016
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