1. Electric driving requirements of large CMOS CCD array based on a 3-phase CCD cell by SOI LDMOS
- Author
-
Zhang Haipeng, Dong Chenhao, and Hong Lingwei
- Subjects
Engineering ,Hardware_MEMORYSTRUCTURES ,Semiconductor device fabrication ,business.industry ,Phase (waves) ,Electrical engineering ,Silicon on insulator ,Hardware_PERFORMANCEANDRELIABILITY ,law.invention ,Capacitor ,CMOS ,Hardware_GENERAL ,law ,Logic gate ,Hardware_INTEGRATEDCIRCUITS ,Resistor ,Process simulation ,business - Abstract
In order to obtain the electric driven requirements of large CMOS CCD array based on a 3-phase OPG structure of CCD cell, process and device simulations of the 3-phase OPG structure of CCD cell in 0.5µm SOI CMOS technology were carried out with Silvaco TCAD—one of the authoritative semiconductor process and device simulators. Then the theory on charge and discharge of resistor-capacitor net was adopted to model the circuit architecture of the 3-phase OPG CCD cell based on the obtained process and device simulation results. After that, the electric driven requirements of large 3-phase OPG CMOS CCD array were deduced, based on which the electric driven requirements of large 3-phase OPG CMOS CCD array were outlined by SOI LDMOS.
- Published
- 2011