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Direct detection of intrinsic defects in halide perovskites HaPs by standard methods utilizing optical excitation is quite challenging, due to the low density of defects in most samples of this family of materials lt; 10 15 cm 3 in polycrystalline thin films and lt; 10 11 cm 3 in single crystals, except melt grown ones . While several electrical methods can detect defect densities lt;10 15 cm 3, such as deep level transient spectroscopy DLTS or thermally stimulated current TSC , they require preparation of ohmic and or rectifying electrical contacts to the sample, which not only poses a challenge by itself in the case of HaPs but also may create defects at the contact HaP interface and introduce extrinsic defects into the HaP. Here, we show that low energy photoelectron spectroscopy measurements can be used to obtain directly the energy position of gap states in Br based wide bandgap E g gt; 2 eV HaPs. By measuring HaP layers on both hole and electron contact layers, as well as single crystals without contacts, we conclude that the observed deep defects are intrinsic to the Br based HaP, and we propose a passivation route via the incorporation of a 2D forming ligand into the precursor solution

We find significant differences between degradation and healing at the surface or in the bulk for each of the different APbBr3 single crystals (A = CH3NH3+, methylammonium (MA); HC(NH2)2+, formamidinium (FA); and cesium, Cs+). Using 1- and 2-photon microscopy and photobleaching we conclude that kinetics dominate the surface and thermodynamics the bulk stability. Fluorescence-lifetime imaging microscopy, as well as results from several other methods, relate the (damaged) state of the halide perovskite (HaP) after photobleaching to its modified optical and electronic properties. The A cation type strongly influences both the kinetics and the thermodynamics of recovery and degradation: FA heals best the bulk material with faster self-healing; Cs+ protects the surface best, being the least volatile of the A cations and possibly through O-passivation; MA passivates defects via methylamine from photo-dissociation, which binds to Pb2+. DFT simulations provide insight into the passivating role of MA, and also indicate the importance of the Br3- defect as well as predicts its stability. The occurrence and rate of self-healing are suggested to explain the low effective defect density in the HaPs and through this, their excellent performance. These results rationalize the use of mixed A-cation materials for optimizing both solar cell stability and overall performance of HaP-based devices, and provide a basis for designing new HaP variants. published

The neutral hydrogen evolution reaction (HER) is vital in the chemical industry, and its efficiency depends on the interior character of the catalyst. Herein, work function (WF) engineering is introduced via 3d metal (Fe, Co, Ni, and Cu) doping for modulating the Fermi energy level of Mo2C. The defective energy level facilitates the free water molecule adsorption and, subsequently, promotes the neutral HER efficiency. Specifically, at a current density of 10 mA/cm2, Cu-Mo2C exhibits the best HER performance with an overpotential of 78 mV, followed by Ni-Mo2C, Co-Mo2C, Fe-Mo2C, and bare Mo2C with 90, 95, 100, and 173 mV, respectively, and the corresponding Tafel slope values are 40, 43, 42, 56, and 102 mV/dec. The modified WF> can also lead to an enhanced photocatalytic efficiency owing to the lowered Schottky barrier and excellent carrier transition across the electrocatalyst–solution interface. When coupling the metal-doped Mo2C samples with TiO2, enhanced photocatalytic neutral HER rates are obtained in comparison to the case with bare TiO2. Typically, the HER rates are 521, 404, 275, 224, 147, and 112 μmol/h for Cu, Ni, Co, Fe, bare Mo2C, and bare TiO2, respectively. Time-resolved photoluminescence spectroscopy (TRPS) and ultrafast transient absorption (TA) measurements are carried out to confirm the recombination and migration of the photogenerated carriers. The fitted τ values from the TRPS curves are 22.6, 20.5, 10.1, 4.7, 4.0, 2.5, and 1.9 ns for TiO2, TiO2-Mo2C, TiO2-Fe-Mo2C, TiO2-Fe-Mo2C, TiO2-Fe-Mo2C, TiO2-Fe-Mo2C, and TiO2-Pt, respectively. Additionally, the fitted τ values from the TA results are 31, 73, and 105 ps for the TiO2-Mo2C, TiO2-Cu-Mo2C, and TiO2-Pt samples, respectively. This work provides in-depth insights into the WF modulation of an electrocatalyst for improving the HER performance.

Although halide perovskites (HaPs) are synthesized in ways that appear antithetical to those required for yielding high-quality semiconductors, the properties of the resulting materials imply, particularly for single crystals, ultralow densities of optoelectronically active defects. This article provides different views of this unusual behavior. We pose the question: Can present models of point defects in solids be used to interpret the experimental data and provide predictive power? The question arises because the measured ultralow densities refer to static defects using our present methods and models, while dynamic defect densities are ultrahigh, a result of the material being relatively soft, with a shallow electrostatic energy landscape, and with anharmonic lattice dynamics. All of these factors make the effects of dynamic defects on the materials’ optoelectronic properties minimal. We hope this article will stimulate discussions on the nontrivial question: Are HaPs, and especially the defects within them, business as usual?

We describe the growth of single crystals of halide perovskites APbBr3, with varying ratios of Cs to methylammonium (MA) on the A site, by antisolvent vapor-assisted crystallization (AVC), and char...

We study halide exchange in the prototypical halide perovskite, methylammonium lead trihalide, MAPbX3 (X = halide), to test and possibly experimentally use halide diffusion in these materials. We u...

The future of halide perovskites (HaPs) is beclouded by limited understanding of their long-term stability. While HaPs can be altered by radiation that induces multiple processes, they can also return to their original state by "self-healing." Here two-photon (2P) absorption is used to effect light-induced modifications within MAPbI

Recently, lead halide-based perovskites have become one of the hottest topics in photovoltaic research because of their excellent optoelectronic properties. Among them, organic-inorganic hybrid perovskite solar cells (PSCs) have made very rapid progress with their power conversion efficiency (PCE) now at 23.7 %. However, the intrinsically unstable nature of these materials, particularly to moisture and heat, may be a problem for their long-term stability. Replacing the fragile organic group with more robust inorganic Cs+ cations forms the cesium lead halide system (CsPbX3 , X is halide) as all-inorganic perovskites which are much more thermally stable and often more stable to other factors. From the first report in 2015 to now, the PCE of CsPbX3 -based PSCs has abruptly increased from 2.9 % to 17.1 % with much enhanced stability. In this Review, we summarize the field up to now, propose solutions in terms of development bottlenecks, and attempt to boost further research in CsPbX3 PSCs.

Lead bromide-based halide perovskites are of interest for wide-band-gap (>1.75 eV) absorbers for low-cost solar spectrum splitting to boost solar-to-electrical energy conversion efficiency/area by ...

The origin of the low densities of electrically active defects in Pb halide perovskite (HaP), a crucial factor for their use in photovoltaics, light emission, and radiation detection, remains a matter of discussion, in part because of the difficulty in determining these densities. Here, we present a powerful approach to assess the defect densities, based on electric field mapping in working HaP-based solar cells. The minority carrier diffusion lengths were deduced from the electric field profile, measured by electron beam-induced current (EBIC). The EBIC method was used earlier to get the first direct evidence for the n-i-p junction structure, at the heart of efficient HaP-based PV cells, and later by us and others for further HaP studies. This manuscript includes EBIC results on illuminated cell cross sections (in operando) at several light intensities to compare optoelectronic characteristics of different cells made by different groups in several laboratories. We then apply a simple, effective single-level defect model that allows deriving the densities (Nr) of the defect acting as recombination center. We find Nr ≈ 1 × 1013 cm-3 for mixed A cation lead bromide-based HaP films and ∼1 × 1014 cm-3 for MAPbBr3(Cl). As EBIC photocurrents are similar at the grain bulk and boundaries, we suggest that the defects are at the interfaces with selective contacts rather than in the HaP film. These results are relevant for photovoltaic devices as the EBIC responses distinguish clearly between high- and low-efficiency devices. The most efficient devices have n-i-p structures with a close-to-intrinsic HaP film, and the selective contacts then dictate the electric field strength throughout the HaP absorber.

Buffeteau et al. note that the proton diffusion coefficient in MAPbI3 that is deduced (by the authors) from results, obtained by a suite of complementary techniques, on a large number of single crystals (Adv. Mater. 2020, 32, 2002467) is 5 orders of magnitude higher than what is estimated (by them) in J. Am. Chem. Soc. 2020, 142, 10431, from infrared spectroscopy on ultrathin MAPbI3 films; use of (deuterium/hydrogen) D/H isotope substitution is common to both studies. Buffeteau et al. speculated that proton diffusion in halide perovskite single crystals is dominated by 1D defects, which will somehow not be present in thin films, as those are made up of small-sized crystallites. It is shown here that the idea of a 1D defect is not supported by the body of experimental data gathered on these crystals, that the statistical analysis employed in to Buffeteau et al. to support the criticism is problematic, and it is concluded that the source of the difference must lie elsewhere. Constructive suggestions for this difference are provided and experiments to discern between possible reasons for it are proposed.

We report a novel Mn-Co-Ni-O (MCN) nanocomposite in which the p-type semiconductivity of Mn-Co-Ni-O can be manipulated by addition of graphene. With an increase of graphene content, the semiconductivity of the nanocomposite can be tuned from p-type through electrically neutral to n-type. The very low effective mass of electrons in graphene facilitates electron tunneling into the MCN, neutralizing holes in the MCN nanoparticles. XPS analysis shows that the multivalent manganese ions in the MCN nanoparticles are chemically reduced by the graphene electrons to lower-valent states. Unlike traditional semiconductor devices, electrons are excited from the filled graphite band into the empty band at the Dirac points from where they move freely in the graphene and tunnel into the MCN. The new composite film demonstrates inherent flexibility, high mobility, short carrier lifetime, and high carrier concentration. This work is useful not only in manufacturing flexible transistors, FETs, and thermosensitive and thermoelectric devices with unique properties but also in providing a new method for future development of 2D-based semiconductors.

Ion diffusion affects the optoelectronic properties of halide-perovskites (HaPs). Until now, the fastest diffusion has been attributed to the movement of the halides, largely neglecting the contribution of protons, on the basis of computed density estimates. Here, the process of proton diffusion inside HaPs, following deuterium-hydrogen exchange and migration in MAPbI3 , MAPbBr3 , and FAPbBr3 single crystals, is proven through D/H NMR quantification, Raman spectroscopy, and elastic recoil detection analysis, challenging the original assumption of halide-dominated diffusion. The results are confirmed by impedance spectroscopy, where MAPbBr3 - and CsPbBr3 -based solar cells respond at very different frequencies. Water plays a key role in allowing the migration of protons as deuteration is not detected in its absence. The water contribution is modeled to explain and forecast its effect as a function of its concentration in the perovskite structure. These findings are of great importance as they evidence how unexpected, water-dependent proton diffusion can be at the basis of the ≈7 orders of magnitude spread of diffusion (attributed to I- and Br- ) coefficient values, reported in the literature. The reported enhancement of the optoelectronic properties of HaP when exposed to small amounts of water may be related to the finding.

High band gap Pb bromide perovskite (APbBr3)-based solar cells, where A is a mixture of formamidinium, methylammonium, and Cs, show significantly higher, relative, VOC losses than their iodide analogs. Using photoluminescence-, quantum efficiency-, and surface photovoltage-spectroscopy measurements, we show the absence of any significant electronically active tail states within the bulk of the (FA0.85MA0.1Cs0.05)PbBr3 absorber. All methods confirm that EG = 2.28 eV for this halide perovskite, HaP. Contact potential difference measurements for this HaP, on different substrates, reveal a Z-shape dependence between the substrate work functions and that of the HaP, deposited on it, indicating that the HaP is relatively low doped and that its Fermi level is affected by the substrate onto which it is deposited. We confirm results from electron beam-induced current (EBIC) and other measurements that most voltage loss of cells, made with these HaP films, is at the HaP/selective-contact interface, specifically the...

Lead-based halide perovskites (APbX3) are fascinating optoelectronic materials. Because of toxicity issues of Pb, Sn-based halide perovskites are studied, although less so, as an alternative. Adding SnF2 often improves the properties of Sn halide perovskite-based devices. This effect is usually ascribed to suppression of Sn2+ → Sn4+ oxidation and/or decreased Sn vacancy concentration. These effects will change the doping, sometimes in opposite directions. Here we review the effect of addition of SnF2 during the formation of ASnX3 layers as observed by different groups, both to the properties of the layers themselves and to photovoltaic cells made from these layers. SnF2 can affect many different properties of the ASnX3 perovskites, including film morphology, doping, control over formation of unwanted crystal phases, material stability to various factors, and energy level positions. It also improves (in general) the performance of photovoltaic cells made with these layers. Besides focusing on all these iss...

Halide perovskite film-based devices (e.g., solar cells and LEDs) have shown unique device performance. These films are commonly prepared from toxic solutions of metal salts (e.g., Pb2+ in DMF or DMSO). We describe a method to form halide perovskite films by simply reacting metal (Pb or Sn) films with alcoholic solutions of monovalent alkali metal or alkyl ammonium halides, which avoids the use of toxic Pb2+ solutions in the manufacturing step. We show how the morphology of the films can be controlled by variation in reaction parameters and also how mixed halide perovskite films can be prepared. A mechanism for the metal-to-perovskite conversion is suggested. We further show how electrochemically assisted conversion can allow control over the oxidation state of the metal and increase the reaction rate greatly.

We report on the chemical and electronic structure of cesium tin bromide (CsSnBr3) and how it is impacted by the addition of 20 mol % tin fluoride (SnF2) to the precursor solution, using both surface-sensitive lab-based soft X-ray photoelectron spectroscopy (XPS) and near-surface bulk-sensitive synchrotron-based hard XPS (HAXPES). To determine the reproducibility and reliability of conclusions, several (nominally identically prepared) sample sets were investigated. The effects of deposition reproducibility, handling, and transport are found to cause significant changes in the measured properties of the films. Variations in the HAXPES-derived compositions between individual sample sets were observed, but in general, they confirm that the addition of 20 mol % SnF2 improves coverage of the titanium dioxide substrate by CsSnBr3 and decreases the oxidation of SnII to SnIV while also suppressing formation of secondary Br and Cs species. Furthermore, the (surface) composition is found to be Cs-deficient and Sn-rich compared to the nominal stoichiometry. The valence band (VB) shows a SnF2-induced redistribution of Sn 5s-derived density of states, reflecting the changing SnII/SnIV ratio. Notwithstanding some variability in the data, we conclude that SnF2 addition decreases the energy difference between the VB maximum of CsSnBr3 and the Fermi level, which we explain by defect chemistry considerations.

We report on the chemical and electronic structure of cesium tin bromide (CsSnBr3) and how it is impacted by the addition of 20 mol % tin fluoride (SnF2) to the precursor solution, using both surfa...

Lead-based halide perovskites have shown a dramatic improvement in photo-conversion efficiencies in the past decade. However, the toxicity of lead (Pb2+) may present barriers or even prevent it from commercialization. On the other hand, Sn2+ is a potential candidate as a replacement of Pb2+, while maintaining the perovskite crystal structure. However, Sn2+ suffers from easy oxidation to Sn4+, resulting in Sn vacancy doping which limits the device efficiencies. It has been generally reported in earlier studies that addition of tin fluoride (SnF2) restricts the oxidation of Sn2+ to Sn4+, resulting in improvement in solar cell efficiencies. We report our findings on the role of SnF2 concentration on the photovoltaic properties and energy level positions of cesium tin bromide (CsSnBr3). The device properties were found to be affected strongly by SnF2 concentration, which could not be explained simply by filling of Sn vacancies by excess tin. Observed changes in CsSnBr3 energy levels also could not explain the improvement. Time-resolved surface photovoltage results are consistent with reduction in trap state density (assumed to be Sn4+) upon SnF2 addition, probably due to the reducing character of SnF2.

A method using vacuum evaporation and hot-pressing to prepare Cu2Se thin films on Cu substrates is developed. The effects of the heating temperature, heating time, and pressure on the crystallinities of the Cu2Se thin films were studied. The structure, morphology, and composition properties of the Cu2Se thin films were characterized by the X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). The results showed that the crystallinities of the Cu2Se thin films improved as the heating temperature was increased from 200 °C to 280 °C. A low pressure of 2 MPa and a short time of 5 min were sufficient to obtain highly crystalline Cu2Se thin films at 280 °C. The fabricated Cu2Se/Cu structure could directly convert heat to electricity with a thermoelectric potential of 12.6 mV at 400 K and 17.8 mV at 500 K. Compared with conventional hot-pressing of bulk materials, this method requires lower temperatures and smaller pressures.

Using several metals with different work functions as solar cell back contact we identify majority carrier type inversion in methylammonium lead bromide (MAPbBr3, without intentional doping) as the basis for the formation of a p–n junction. MAPbBr3 films deposited on TiO2 are slightly n-type, whereas in a full device they are strongly p-type. The charge transfer between the metal electrode and the halide perovskite (HaP) film is shown to determine the dominant charge carrier type of the HaP and, thus, also of the final cells. Usage of Pt, Au and Pb as metal electrodes shows the effects of metal work function on minority carrier diffusion length and majority carrier concentration in the HaP, as well as on built-in voltage, band bending, and open circuit voltage (VOC) within a solar cell. VOC > 1.5 V is demonstrated. The higher the metal WF, the higher the carrier concentration induced in the HaP, as indicated by a narrower space charge region and a smaller minority carrier diffusion length. From the analysis of bias-dependent electron beam-induced currents, the HaP carrier concentrations are estimated to be ∼ 1 × 1017 cm−3 with Au and 2–3 × 1018 cm−3 with Pt. A model in which type-inversion stretches across the entire film width implies formation of the p–n junction away from the interface, near the back-contact metal electrode. This work highlights the importance of the contact metal on device performance in that contact engineering can also serve to control the carrier concentration in HaP.

Photovoltaic solar cells operate under steady-state conditions that are established during the charge carrier excitation and recombination. However, to date no model of the steady-state recombination scenario in halide perovskites has been proposed. In this Letter we present such a model that is based on a single type of recombination center, which is deduced from our measurements of the illumination intensity dependence of the photoconductivity and the ambipolar diffusion length in those materials. The relation between the present results and those from time-resolved measurements, such as photoluminescence that are commonly reported in the literature, is discussed.

We investigate the effect of high work function contacts in halide perovskite absorber-based photovoltaic devices. Photoemission spectroscopy measurements reveal that band bending is induced in the absorber by the deposition of the high work function molybdenum trioxide (MoO3). We find that direct contact between MoO3 and the perovskite leads to a chemical reaction, which diminishes device functionality. Introducing an ultrathin spiro-MeOTAD buffer layer prevents the reaction, yet the altered evolution of the energy levels in the methylammonium lead iodide (MAPbI3) layer at the interface still negatively impacts device performance.

Solar cells based on “halide perovskites” (HaPs) have demonstrated unprecedented high power conversion efficiencies in recent years. However, the well-known toxicity of lead (Pb), which is used in the most studied cells, may affect its widespread use. We explored an all-inorganic lead-free perovskite option, cesium tin bromide (CsSnBr3), for optoelectronic applications. CsSnBr3-based solar cells exhibited photoconversion efficiencies (PCEs) of 2.1%, with a short-circuit current (JSC) of ∼9 mA cm–2, an open circuit potential (VOC) of 0.41 V, and a fill factor (FF) of 58% under 1 sun (100 mW cm–2) illumination, which, even though meager compared to the Pb analogue-based cells, are among the best reported until now. As reported earlier, addition of tin fluoride (SnF2) was found to be beneficial for obtaining good device performance, possibly due to reduction of the background carrier density by neutralizing traps, possibly via filling of cation vacancies. The roles of SnF2 on the properties of the CsSnBr3 we...

The realization of high-quality optoelectronic properties in halide perovskite semiconductors through low-temperature, low energy processing is unprecedented. Understanding the unique aspects of the formation chemistry of these semiconductors is a critical step toward understanding the genesis of high quality material via simple preparation procedures. The toolbox of preparation procedures for halide perovskites grows rapidly. The prototypical reaction is that between lead iodide (PbI2) and methylammonium iodide (CH3NH3I, abbr. MAI) to form the perovskite CH3NH3PbI3 (MAPbI3), which we discuss in this work. We investigate the conversion of small, single-crystalline PbI2 crystallites to MAPbI3 by two commonly used synthesis processes: reaction with MAI in solution or as a vapor. The single crystal nature of the PbI2 precursor allows definitive conclusions to be made about the relationship between the precursors and the final product, illuminating previously unobserved aspects of the reaction process. From i...

Cesium lead bromide (CsPbBr3) was recently introduced as a potentially high performance thin-film halide perovskite (HaP) material for optoelectronics, including photovoltaics, significantly more stable than MAPbBr3 (MA = CH3NH3+). Because of the importance of single crystals to study relevant material properties per se, crystals grown under conditions comparable to those used for preparing thin films, i.e., low-temperature solution-based growth, are needed. We show here two simple ways, antisolvent-vapor saturation or heating a solution containing retrograde soluble CsPbBr3, to grow single crystals of CsPbBr3 from a precursor solution, treated with acetonitrile (MeCN) or methanol (MeOH). The precursor solutions are stable for at least several months. Millimeter-sized crystals are grown without crystal-seeding and can provide a 100% yield of CsPbBr3 perovskite crystals, avoiding a CsBr-rich (or PbBr2-rich) composition, which is often present alongside the perovskite phase. Further growth is demonstrated t...

Metal-free halide perovskites, as a specific category of the perovskite family, have recently emerged as novel semiconductors for organic ferroelectrics and promise the wide chemical diversity of the ABX3 perovskite structure with mechanical flexibility, light weight, and eco-friendly processing. However, after the initial discovery 17 years ago, there has been no experimental information about their charge transport properties and only one brief mention of their optoelectronic properties. Here, growth of large single crystals of metal-free halide perovskite DABCO-NH4 Br3 (DABCO = N-N'-diazabicyclo[2.2.2]octonium) is reported together with characterization of their instrinsic optical and electronic properties and demonstration, of metal-free halide perovskite optoelectronics. The results reveal that the crystals have an unusually large semigap of ≈16 eV and a specific band nature with the valence band maximum and the conduction band minimum mainly dominated by the halide and DABCO2+ , respectively. The unusually large semigap rationalizes extremely long lifetimes approaching the millisecond regime, leading to very high charge diffusion lengths (tens of μm). The crystals also exhibit high X-ray attenuation as well as being lightweight. All these properties translate to high-performance X-ray imaging with sensitivity up to 173 μC Gyair -1 cm-2 . This makes metal-free perovskites novel candidates for the next generation of optoelectronics.

Recently, lead halide-based perovskites have become one of the hottest topics in photovoltaic research because of their excellent optoelectronic properties. Among them, organic-inorganic hybrid perovskite solar cells (PSCs) have made very rapid progress with their power conversion efficiency (PCE) now at 23.7 %. However, the intrinsically unstable nature of these materials, particularly to moisture and heat, may be a problem for their long-term stability. Replacing the fragile organic group with more robust inorganic Cs

In-gap states in solar cell absorbers that are recombination centers determine the cell's photovoltaic performance. Using scanning tunneling spectroscopy (STS), temperature-dependent photoconductivity and steady-state photocarrier-grating measurements we probed, directly and indirectly, the energies of such states, both at the surface and in the bulk of two similar, but different halide perovskites, the single cation MAPbI3 (here MAPI) and the mixed cation halide perovskite, FA0.79MA0.16Cs0.05Pb(I0.83Br0.17)3 (here MCHP). We found a correlation between the energy distribution of the in-gap states, as determined by STS measurements, and their manifestation in the photo-transport parameters of the MCHP absorbers. In particular, our results suggest that the in-gap recombination centers in the MCHP are shallower than those of MAPI. This can be one explanation for the better photovoltaic efficiency of the former.

The presence of excess lead iodide in halide perovskites has been key for surpassing 20% photon-to-power conversion efficiency. To achieve even higher power conversion efficiencies, it is important to understand the role of remnant lead iodide in these perovskites. To that end, we explored the mechanism facilitating this effect by identifying the impact of excess lead iodide within the perovskite film on charge diffusion length, using electron-beam-induced current measurements, and on film formation properties, from grazing-incidence wide-angle X-ray scattering and high-resolution transmission electron microscopy. Based on our results, we propose that excess lead iodide in the perovskite precursors can reduce the halide vacancy concentration and lead to formation of azimuthal angle-oriented cubic α-perovskite crystals in-between 0° and 90°. We further identify a higher perovskite carrier concentration inside the nanostructured titanium dioxide layer than in the capping layer. These effects are consistent with enhanced lead iodide-rich perovskite solar cell performance and illustrate the role of lead iodide., Excess lead iodide in the mixed halide perovskites solar cells leads to high device performance but its origin remains elusive. Here Park et al. unveil the underlying microscopic mechanism to be promoting the oriented growth of the perovskites crystals and reducing the defect concentration.

Hybrid alkylammonium lead halide perovskite solar cells have, in a very few years of research, exceeded a light-to-electricity conversion efficiency of 20%, not far behind crystalline silicon cells. These perovskites do not contain any rare element, the amount of toxic lead used is very small, and the cells can be made with a low energy input. They therefore already conform to two of the three requirements for viable, commercial solar cells-efficient and cheap. The potential deal-breaker is their long-term stability. While reasonable short-term (hours) and even medium term (months) stability has been demonstrated, there is concern whether they will be stable for the two decades or more expected from commercial cells in view of the intrinsically unstable nature of these materials. In particular, they have a tendency to be sensitive to various types of irradiation, including sunlight, under certain conditions. This Account focuses on the effect of irradiation on the hybrid (and to a small degree, all-inorganic) lead halide perovskites and their solar cells. It is split up into two main sections. First, we look at the effect of electron beams on the materials. This is important, since such beams are used for characterization of both the perovskites themselves and cells made from them (electron microscopy for morphological and compositional characterization; electron beam-induced current to study cell operation mechanism; cathodoluminescence for charge carrier recombination studies). Since the perovskites are sensitive to electron beam irradiation, it is important to minimize beam damage to draw valid conclusions from such measurements. The second section treats the effect of visible and solar UV irradiation on the perovskites and their cells. As we show, there are many such effects. However, those affecting the perovskite directly need not necessarily always be detrimental to the cells, while those affecting the solar cells, which are composed of several other phases as well as the perovskite light absorber, are not always due to the perovskite itself. While we cannot yet say whether perovskite solar cells will or will not be stable over the long-term, the information in this Account should be a useful source to help achieve this goal.

Halide perovskite-based solar cells still have limited reproducibility, stability, and incomplete understanding of how they work. We track electronic processes in [CH3NH3]PbI3(Cl) ("perovskite") films in vacuo, and in N2, air, and O2, using impedance spectroscopy (IS), contact potential difference, and surface photovoltage measurements, providing direct evidence for perovskite sensitivity to the ambient environment. Two major characteristics of the perovskite IS response change with ambient environment, viz. -1- appearance of negative capacitance in vacuo or post-vacuo N2 exposure, indicating for the first time an electrochemical process in the perovskite, and -2- orders of magnitude decrease in the film resistance upon transferring the film from O2-rich ambient atmosphere to vacuum. The same change in ambient conditions also results in a 0.5 V decrease in the material work function. We suggest that facile adsorption of oxygen onto the film dedopes it from n-type toward intrinsic. These effects influence any material characterization, i.e., results may be ambient-dependent due to changes in the material's electrical properties and electrochemical reactivity, which can also affect material stability.

Thiocyanate ion treatment, usually either LiSCN or KSCN, of the absorbing semiconductor before deposition of a CuSCN hole conducting layer is known to improve the performance of extremely thin absorber (ETA) solar cells by reducing the cell resistivity. However, in spite of several hypotheses, the mechanism behind this treatment outcome remains elusive. In this study, the interface between Sb2S3 and CuSCN in an ETA cell is investigated with surface spectroscopy and transient absorption spectroscopy to establish the mechanistic aspects of the KSCN treatment and the role it plays in improving the photovoltaic performance. The prominent factors that dictate the cell performance are (a) doping the interfacial CuSCN and thus preventing the formation of a sub-μm depleted layer and (b) passivating charge traps at the Sb2S(O)3 surface, which increases the rate of hole transfer from the absorber to the hole conductor. We further show that the treatment works just as well in improving photovoltaic performance when ...

High band gap, high open circuit voltage solar cells with methylammonium lead tribromide MAPbBr3 perovskite absorbers are of interest for spectral splitting and photoelectrochemical applications, because of their good performance and ease of processing. The physical origin of high performance in these and similar perovskite based devices remains only partially understood. Using cross sectional electron beaminduced current EBIC measurements, we find an increase in carrier diffusion length in MAPbBr3 Cl based solar cells upon low intensity a few percent of 1 sun intensity blue laser illumination. Comparing dark and illuminated conditions, the minority carrier electron diffusion length increases about 3.5 times from Ln 100 50 nm to 360 22 nm. The EBIC cross section profile indicates a p amp; 8722;n structure between the n FTO TiO2 and p perovskite, rather than the p amp; 8722;i amp; 8722;n structure, reported for the iodide derivative. On the basis of the variation in space charge region width with varying bias, measured by EBIC and capacitance amp; 8722;voltage measurements, we estimate the net doping concentration in MAPbBr3 Cl to be 3 amp; 8722;6 1017 cm amp; 8722;3

The great promise of hybrid organic-inorganic lead halide perovskite (HOIP)-based solar cells is being challenged by its Pb content and its sensitivity to water. Here, the impact of rain on methylammonium lead iodide perovskite films was investigated by exposing such films to water of varying pH values, simulating exposure of the films to rain. The amount of Pb loss was determined using both gravimetric and inductively coupled plasma mass spectrometry measurements. Using our results, the extent of Pb loss to the environment, in the case of catastrophic module failure, was evaluated. Although very dependent on module siting, even total destruction of a large solar electrical power generating plant, based on HOIPs, while obviously highly undesirable, is estimated to be far from catastrophic for the environment.

Time-resolved, pulsed excitation methods are widely used to deduce optoelectronic properties of semiconductors, including now also Halide Perovskites (HaPs), especially transport properties. However, as yet, no evaluation of their amenability and justification for the use of the results for the above-noted purposes has been reported. To check if we can learn from pulsed measurement results about steady-state phototransport properties, we show here that, although pulsed measurements can be useful to extract information on the recombination kinetics of HaPs, great care should be taken. One issue is that no changes in the material are induced during or as a result of the excitation, and another one concerns in how far pulsed excitation-derived data can be used to find relevant steady-state parameters. To answer the latter question, we revisited pulsed excitation and propose a novel way to compare between pulsed and steady state measurements at different excitation intensities. We performed steady-state photoconductivity and ambipolar diffusion length measurements, as well as pulsed time-resolved microwave conductivity and time-resolved photoluminescence measurements as a function of excitation intensity on the same samples of different MAPbI3 thin films, and found good quasi-quantitative agreement between the results, explaining them with a generalized single level recombination model that describes the basic physics of phototransport of HaP absorbers. Moreover, we find the first experimental manifestation of the boundaries between several effective recombination regimes that exist in HaPs, by analyzing their phototransport behavior as a function of excitation intensity.

A small molecule based on N,N′-dialkyl perylenediimide (PDI) as core derivatized with thiophene moieties (Th-PDI) was synthesized. Its HOMO (highest occupied molecular orbital) level was measured to be between 5.7 and 6.3 eV vs. local vacuum level depending on doping and measurement method. Th-PDI was successfully applied as hole-transporting material (HTM) in CH3NH3PbBr3 hybrid perovskite solar cells. Three different cell architectures, each with a different mode of operation, were tested: (1) using a mesoporous (mp) TiO2 substrate; (2) mp-Al2O3 substrate; (3) planar dense TiO2 substrate. The first gave the best overall efficiency of 5.6% while the mp-Al2O3 gave higher open-circuit photovoltage (VOC) but lower efficiency (2.2%). The cells exhibited good reproducibility with very little J–V hysteresis (the mp-Al2O3 showed a more appreciable hysteresis of individual photovoltaic parameters but little dependence of efficiency on scan direction). Storage of unencapsulated cells in 25–30% relative humidity demonstrated fairly good stability with

Self-healing, where a modification in some parameter is reversed with time without any external intervention, is one of the particularly interesting properties of halide perovskites. While there are a number of studies showing such self-healing in perovskites, they all are carried out on thin films, where the interface between the perovskite and another phase (including the ambient) is often a dominating and interfering factor in the process. Here, self-healing in perovskite (methylammonium, formamidinium, and cesium lead bromide (MAPbBr

Halide perovskite (HaP) semiconductors are revolutionizing photovoltaic (PV) solar energy conversion by showing remarkable performance of solar cells made with esp. tetragonal methylammonium lead tri-iodide (MAPbI3). In particular, the low voltage loss of these cells implies a remarkably low recombination rate of photogenerated carriers. It was suggested that low recombination can be due to spatial separation of electrons and holes, a possibility if MAPbI3 is a semiconducting ferroelectric, which, however, requires clear experimental evidence. As a first step we show that, in operando, MAPbI3 (unlike MAPbBr3) is pyroelectric, which implies it can be ferroelectric. The next step, proving it is (not) ferroelectric, is challenging, because of the material s relatively high electrical conductance (a consequence of an optical band gap suitable for PV conversion!) and low stability under high applied bias voltage. This excludes normal measurements of a ferroelectric hysteresis loop to prove ferroelctricity s hallmark for switchable polarization. By adopting an approach suitable for electrically leaky materials as MAPbI3, we show here ferroelectric hysteresis from well-characterized single crystals at low temperature (still within the tetragonal phase, which is the room temperature stable phase). Using chemical etching, we also image polar domains, the structural fingerprint for ferroelectricity, periodically stacked along the polar axis of the crystal, which, as predicted by theory, scale with the overall crystal size. We also succeeded in detecting clear second-harmonic generation, direct evidence for the material s non-centrosymmetry. We note that the material s ferroelectric nature, can, but not obviously need to be important in a PV cell, operating around room temperature., (p:1), Main text [Includes 7 figures] (P:2-13), References (p:14-17), Supporting information (p:18-36)

The field of organo-lead perovskite absorbers for solar cells is developing rapidly, with open-circuit voltage of reported devices already approaching the maximal theoretical voltage. Obtaining such high voltages on spun-cast or evaporated thin films is intriguing and calls for detailed investigation of the source of photovoltage in those devices. We present here a study of the roles of the selective contacts to methylammonium lead iodide chloride (MAPbI3-xClx) using surface photovoltage spectroscopy. By depositing and characterizing each layer at a time, we show that the electron-extracting interface is more than twice as effective as the hole-extracting interface in generating photovoltage, for several combinations of electrode materials. We further observe the existence of an electron-injection related spectral feature at 1.1 eV, which might bear significance for the cell's operation. Our results illustrate the usefulness of SPV spectroscopy in highlighting gaps in cells efficiency and for deepening the understanding of charge injection processes in perovskite-based photovoltaics.

Solid-state semiconductor-sensitized solar cells require a thin, dense hole-blocking layer at the conducting glass substrate (F-doped tin oxide (FTO)) to prevent shorting beween the FTO and hole conductor. We found that by adding a small amount of Sb ions to a ZnO chemical deposition bath a thin (few tens of nanometers thick) dense and uniform layer of Sb-incorporated ZnO forms. Here we investigate the electronic properties of this layer in comparison to the continuous ZnO layer at the base of the ZnO rods formed in the standard preparation. Devices incorporating the Sb-incorporated dense layer followed by a standard ZnO nanorod growth, onto which CdS or CdSe was grown followed by a CuSCN hole conductor, showed 100–200 mV higher photovoltage together with occasional improvement in the short-circuit current. Electrochemical and electrical measurements indicated complete coverage of the FTO substrate by both preparations; however, the shunt resistance (resistance to a reverse leakage current) in the cells (...