Search

Dietary exposure to 2-amino-1-methyl-6-phenylimidazo [4,5-b] pyridine (PhIP) in cooked meats maybe responsible for the high burden of Esophageal squamous cell carcinoma (ESCC) in southwestern Uganda. We conducted a pilot case-control study among 31 histologically confirmed ESCC cases and 54 age, gender, and residence matched healthy community controls sampled from the general population at the time of accrual of each case in southwestern Uganda. We collected data including smoking, alcohol consumption, diet, and scalp hair samples analyzed for normalized PhlP (adjusted per gram of melanin). We used logistic regression to determine the association of PhlP and ESCC. Overall, the mean normalized PhIP (ng/g melanin) was 44.79 (SD 148.08), higher among women compared to men (130.68 vs. 9.00, p = 0.03), lowest among healthy men [8.31 (SD 8.52) ng/g melanin] and highest among healthy women 158.39 (SD 288.75) ng/g melanin. In fully adjusted models, covariates associated with greater odds of ESCC included ever smoking 2 to 3 pack years of cigarettes (aOR 7.75 (95% CI 1.90, 31.50) and those 3 or more pack years (aOR5.82, 95%CI 1.25, 27.11), drinking 3 to 4 alcoholic drinks daily (aOR8.00, 95%CI 2.31, 27.74), and normalized PhIP above 75th percentile (8.65 ng/g of melanin) (aOR4.27, 95%CI 1.12, 16.24). In conclusion, high PhIP levels maybe associated with ESCC in a rural Uganda, a high ESCC burden setting. Further study with larger sample with a wider geographical representation is needed to validate scalp hair PhIP for assessment of ESCC risk.

The realization of ultra-compact passive silicon photonic devices is becoming more and more important for the future large-scale photonic integration as desired for many systems. Although some compact silicon photonic devices have been demonstrated by using inverse design, the device performance is still insufficient for real applications. Here, we propose and realize several representative ultra-compact advanced passive silicon photonic devices with decent performances by introducing subwavelength-grating (SWG) structures developed by our high-efficiency inverse design method. These devices are designed by optimally manipulating the multimode excitation and the multimode interference in a region defined with SWG structures. These SWG structures with excellent feature-size uniformity are more fabrication-friendly than those random nano-structures used in previous inverse-designed photonic devices. The high-efficiency of our inverse design method is attributed to a novel search-space-dimension control strategy and the efficient problem-oriented electromagnetic-field solvers available for SWG structures. Specifically, we present the realization of a 6-channel mode (de)multiplexer, a broadband 90{\deg}-hybrid, and a two-channel flat-top wavelength demultiplexer as some examples, which can hardly be realized by previously reported inverse design approaches. These devices exhibit ultra-compact footprints as well as decent performances when compared to the counterparts developed by the classical theory., Comment: 29 pages, 7 figures

A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the light absorption in graphene is enhanced while the metal absorption loss is reduced simultaneously, which helps greatly improve the responsivity as well as shorten the absorption region for achieving fast responses. Furthermore, metal-graphene-metal sandwiched electrodes are introduced to reduce the metal-graphene contact resistance, which is also helpful for improving the response speed. When the photodetector operates at 2 {\mu}m, the measured 3dB-bandwidth is >20 GHz (which is limited by the experimental setup) while the 3dB-bandwith calculated from the equivalent circuit with the parameters extracted from the measured S11 is as high as ~100 GHz. To the best of our knowledge, it is the first time to report the waveguide photodetector at 2 {\mu}m with a 3dB-bandwidth over 20 GHz. Besides, the present photodetectors also work very well at 1.55 {\mu}m. The measured responsivity is about 0.4 A/W under a bias voltage of -0.3 V for an optical power of 0.16 mW, while the measured 3dB-bandwidth is over 40 GHz (limited by the test setup) and the 3 dB-bandwidth estimated from the equivalent circuit is also as high as ~100 GHz, which is one of the best results reported for silicon-graphene photodetectors at 1.55 {\mu}m., Comment: 22 pages, 7 figures, 1 table. Supplementary Materials are available

A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 ��m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the light absorption in graphene is enhanced while the metal absorption loss is reduced simultaneously, which helps greatly improve the responsivity as well as shorten the absorption region for achieving fast responses. Furthermore, metal-graphene-metal sandwiched electrodes are introduced to reduce the metal-graphene contact resistance, which is also helpful for improving the response speed. When the photodetector operates at 2 ��m, the measured 3dB-bandwidth is >20 GHz (which is limited by the experimental setup) while the 3dB-bandwith calculated from the equivalent circuit with the parameters extracted from the measured S11 is as high as ~100 GHz. To the best of our knowledge, it is the first time to report the waveguide photodetector at 2 ��m with a 3dB-bandwidth over 20 GHz. Besides, the present photodetectors also work very well at 1.55 ��m. The measured responsivity is about 0.4 A/W under a bias voltage of -0.3 V for an optical power of 0.16 mW, while the measured 3dB-bandwidth is over 40 GHz (limited by the test setup) and the 3 dB-bandwidth estimated from the equivalent circuit is also as high as ~100 GHz, which is one of the best results reported for silicon-graphene photodetectors at 1.55 ��m., 22 pages, 7 figures, 1 table. Supplementary Materials are available

Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {\mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {\mu}m or longer for satisfying the increasing demands in many applications. Mid-IR waveguide photodetectors on silicon have attracted intensive attention as one of the indispensable elements for various photonic systems. Previously high-performance waveguide photodetectors on silicon were realized for the near-IR window of 1.3-1.5 {\mu}m by introducing another semiconductor material (e.g., Ge, and III-V compounds) in the active region. Unfortunately, these traditional semiconductor materials do not work well for the wavelength of ~2 {\mu}m or longer because the light absorption becomes very weak. As an alternative, two-dimensional materials provide a new and promising option for enabling active photonic devices on silicon. Here black-phosphorus (BP) thin films with optimized medium thicknesses (~40 nm) are introduced as the active material for light absorption and silicon/BP hybrid ridge waveguide photodetectors are demonstrated with a high responsivity at a low bias voltage. And up to 4.0Gbps data transmission is achieved at 2{\mu}m., Comment: 20 pages, 13 figures, 2 tables

Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 ��m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 ��m or longer for satisfying the increasing demands in many applications. Mid-IR waveguide photodetectors on silicon have attracted intensive attention as one of the indispensable elements for various photonic systems. Previously high-performance waveguide photodetectors on silicon were realized for the near-IR window of 1.3-1.5 ��m by introducing another semiconductor material (e.g., Ge, and III-V compounds) in the active region. Unfortunately, these traditional semiconductor materials do not work well for the wavelength of ~2 ��m or longer because the light absorption becomes very weak. As an alternative, two-dimensional materials provide a new and promising option for enabling active photonic devices on silicon. Here black-phosphorus (BP) thin films with optimized medium thicknesses (~40 nm) are introduced as the active material for light absorption and silicon/BP hybrid ridge waveguide photodetectors are demonstrated with a high responsivity at a low bias voltage. And up to 4.0Gbps data transmission is achieved at 2��m., 20 pages, 13 figures, 2 tables