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Si-SiO2 multilayer nanocomposite (NCp) films, grown using pulsed laser deposition with varying Si deposition time are investigated using Raman spectroscopy/mapping for studying the variation of Si phonon frequency observed in these NCps. The lower frequency (LF) phonons (~ 495 - 510 cm-1) and higher frequency (HF) phonons (~ 515 - 519 cm-1) observed in Raman mapping data (Fig. 1A) in all samples studied are attributed to have originated from surface (Si-SiO2 interface) and core of Si nanocrystals, respectively. The consistent picture of this understanding is developed using Raman spectroscopy monitored laser heating/annealing and cooling (LHC) experiment at the site of a desired frequency chosen with the help of Raman mapping, which brings out clear difference between core and surface (interface) phonons of Si nanocrystals. In order to further support our attribution of LF being surface (interface) phonons, Raman spectra calculations for Si41 cluster with oxygen termination are performed which shows strong Si phonon frequency at 512 cm-1 corresponding to the surface Si atoms. This can be considered analogous to the observed phonon frequencies in the range 495 - 510 cm-1 originating at the Si-SiO2 interface (extended). These results along with XPS data show that nature of interface (oxygen bonding) in turn depends on the size of nanocrystals and thus LF phonons originate at the surface of smaller Si nanocrystals. The understanding developed can be extended to explain large variation observed in Si phonon frequencies of Si-SiO2 nanocomposites reported in the literature, especially lower frequencies.

Intermediate frequency range (511 - 514 cm-1) Si phonons in Si-SiO2 nanocomposites are shown to have contribution from both core1 and surface/interface1 Si phonons, where, ratio of contribution of the two depends on the size of a Si nanocrystal. Further, laser heating experiment shows that contribution of the core phonon increases due to increase in size of a nanocrystal. Wavelength dependent Raman mapping reveals that interface phonons are observable due to Resonance Raman scattering. This can well be corroborated with the absorption spectra. This understanding can be gainfully used to manipulate and characterize Si-SiO2 nanocomposite, simultaneously for photovoltaic device applications.

We have used simple chemical bath deposition technique to grow nearly monodispersive CdS nanocrystals in PVP matrix. Systematic study of variation of growth parameters has revealed that optimized growth of CdS nanocrystals in PVP matrix depends on relative concentration of Cd acetate/Thiourea to polyvinyl pyrrolidone in the bath. It is also observed that higher concentration (1M) of Cd acetate/Thiourea gives rise to smaller NCs compared to lower concentration (0.5M), however density of particles is large in thin film grown using 1M concentration. Scanning electron microscopic studies show that it is a nanoparticulate film of spheres of size around 100-200nm. Further, absorption, energy dispersive spectroscopy and transmission electron microscopic investigations reveal that nearly monodispersive CdS nanocrystals are embedded in 100-200 nm PVP spheres for the range 0.5 M, 1M Cd acetate/Thiourea concentration (figure 1). The effect of varying PVP, Cd acetate/Thiourea concentration, sequence and addition of ingredients and heating/cooling cycles have been studied and results are corroborated with existing theory.

We report on the impulsive generation of coherent optical phonons in CdTe0.68Se0.32 nanocrystallites embedded in a glass matrix. Pump probe experiments using femtosecond laser pulses were performed by tuning the laser central energy to resonate with the absorption edge of the nanocrystals. We identify two longitudinal optical phonons, one longitudinal acoustic phonon and a fourth mode of a mixed longitudinal-transverse nature. The amplitude of the optical phonons as a function of the laser central energy exhibits a resonance that is well described by a model based on impulsive stimulated Raman scattering. The phases of the coherent phonons reveal coupling between different modes. At low power density excitations, the frequency of the optical coherent phonons deviates from values obtained from spontaneous Raman scattering. This behavior is ascribed to the presence of electronic impurity states which modify the nanocrystal dielectric function and, thereby, the frequency of the infrared-active phonons.

Modification induced by 110 MeV Ni ion irradiated thin film samples of C60 on Si and quartz substrates were studied at various fluences. The pristine and irradiated samples were investigated using Raman spectroscopy, electrical conductivity and optical absorption spectroscopy. The Raman data and band gap measurements indicate that swift ions at low fluences result in formations that involve multiple molecular units like dimer or polymer. High fluence irradiation resulted in sub-molecular formations and amorphous semiconducting carbon, indicating overall damage of the fullerene molecules. These sub-molecular units have been identified with nanocrystalline diamond and nanocrystalline graphite like formations., Comment: 7 pages, 29 references and 9 figures submitted to J. Appl. Phys