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In 4-mask manufacturing process of the thin film transistor(TFT) liquid crystal display(LCD),multi-layer etch is a very critical process,because metal remain defect would happen after multi-layer etch,which will influence on the next insulator layer deposition,and induce layer broken.Conventional method for eliminating metal remain is to adjust multi-layer etch process,but there is no fundamental improvement.In this paper,the influence of data line etch time on metal remain after multi-layer etch has been researched,and it is found that metal remain could be fundamentally eliminated by adjusting data line etch time,and also could keep data line width in control.

Using Monte Carlo simulation, we have compared the magnetic properties between nanostructured thin films and two-dimensional crystalline solids. The dependence of nanostructured properties on the interaction between particles that constitute the nanostructured thin films is also studied. The result shows that the parameters in the interaction potential have an important effect on the properties of nanostructured thin films at the transition temperatures.

The abnormal IR effects(AIREs) of the adsorption of CO on electrodes made of Pt nanostructured thin films generated in square wave potential treatment were obs erved. Based on the experimental results, the AIREs were analysed and simulated by taking into consideration of the interparticle interaction and the electron- hole damping. The results illustrate that the islanded nanostructured Pt surface s give rise to the interactions between CO molecules as well as between CO molec ules and nanostructured Pt surface. The energy transfer due to electron_hole dam ping and the enhancement of interparticle interaction are the important cause of the changes of IR absorption spectra.