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Introduction to SPIE Advanced Lithography conference 11615: Advanced Etch Technology and Process Integration for Nanopatterning X.

In this work, we present and compare two integration approaches to enable self-alignment of the block suitable for the 5- nm technology node. The first approach is exploring the insertion of a spin-on metal-based material to memorize the first block and act as an etch stop layer in the overall integration. The second approach is evaluating the self-aligned block technology employing widely used organic materials and well-known processes. The concept and the motivation are discussed considering the effects on design and mask count as well as the impact on process complexity and EPE budget. We show the integration schemes and discuss the requirements to enable self-alignment. We present the details of materials and processes selection to allow optimal selective etches and we demonstrate the proof of concept using a 16- nm half-pitch BEOL vehicle. Finally, a study on technology insertion and cost estimation is presented.

Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.