Author: "Kanemaru S" / Database: OpenAIRE - Searchworks@Jio Institute Digital Library Search Results

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Your search keyword '"Kanemaru S"' showing total 3 results

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3 results on '"Kanemaru S"'

1. Highly suppressed threshold voltage roll-off characteristics of the 4 nm-thick SOI n-MOSFETS in the 40-135 NM gate length regime

Author: Suzuki, E., Ishii, K., Kanemaru, S., Tatsuro Maeda, Tsutsumi, T., Nagai, K., Sekigawa, T., and Hiroshima, H.

2. Fabrication of poly-Si TFT controlled FED

Author: Masayoshi Nagao, Yasumuro, C., Sakamura, Y., Tanoue, H., Kanemaru, S., Itoh, J., and ITE

3. 15-nm-thick Si channel wall vertical double-gate MOSFET

Author: Masahara, M., Matsukawa, T., Ishii, K., Liu, Y. X., Tanoue, H., Kunihiro Sakamoto, Sekigawa, T., Yamauchi, H., Kanemaru, S., Suzuki, E., and Electronic Devices Society Of, Ieee

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