Search

Quantum circuits interact with the environment via several temperature-dependent degrees of freedom. Yet, multiple experiments to-date have shown that most properties of superconducting devices appear to plateau out at $T\approx 50$ mK -- far above the refrigerator base temperature. This is for example reflected in the thermal state population of qubits, in excess numbers of quasiparticles, and polarisation of surface spins -- factors contributing to reduced coherence. We demonstrate how to remove this thermal constraint by operating a circuit immersed in liquid $^3$He. This allows to efficiently cool the decohering environment of a superconducting resonator, and we see a continuous change in measured physical quantities down to previously unexplored sub-mK temperatures. The $^3$He acts as a heat sink which increases the energy relaxation rate of the quantum bath coupled to the circuit a thousand times, yet the suppressed bath does not introduce additional circuit losses or noise. Such quantum bath suppression can reduce decoherence in quantum circuits and opens a route for both thermal and coherence management in quantum processors.

Noise and decoherence due to spurious two-level systems (TLS) located at material interfaces is a long-standing issue in solid state quantum technologies. Efforts to mitigate the effects of TLS have been hampered by a lack of surface analysis tools sensitive enough to identify their chemical and physical nature. Here we measure the dielectric loss, frequency noise and electron spin resonance (ESR) spectrum in superconducting resonators and demonstrate that desorption of surface spins is accompanied by an almost tenfold reduction in the frequency noise. We provide experimental evidence that simultaneously reveals the chemical signatures of adsorbed magnetic moments and demonstrates their coupling via the electric-field degree of freedom to the resonator, causing dielectric (charge) noise in solid state quantum devices., 13 pages, 11 figures

It is universally accepted that noise and decoherence affecting the performance of superconducting quantum circuits are consistent with the presence of spurious two-level systems (TLS). In recent years bulk defects have been generally ruled out as the dominant source, and the search has focused on surfaces and interfaces. Despite a wide range of theoretical models and experimental efforts, the origin of these surface TLS still remains largely unknown, making further mitigation of TLS induced decoherence extremely challenging. Here we use a recently developed on-chip electron spin resonance (ESR) technique that allows us to detect spins with a very low surface coverage. We combine this technique with various surface treatments specifically to reveal the nature of native surface spins on Al$_2$O$_3$ -- the mainstay of almost all solid state quantum devices. On a large number of samples we resolve three ESR peaks with the measured total paramagnetic spin density $n=2.2\times 10^{17}$m$^{-2}$, which matches the density inferred from the flux noise in SQUIDs. We show that two of these peaks originate from physisorbed atomic hydrogen which appears on the surface as a by-product of water dissociation. We suggest that the third peak is due to molecular oxygen on the Al$_2$O$_3$ surface captured at strong Lewis base defect sites, producing charged O$_2^-$. These results provide important information towards the origin of charge and flux noise in quantum circuits. Our findings open up a whole new approach to identification and controlled reduction of paramagnetic sources of noise in solid state quantum devices., 6 pages, 2 figures (supplementary material 6 pages, 6 figures)

Epitaxial graphene has proven itself to be the best candidate for quantum electrical resistance standards due to its wide quantum Hall plateaus with exceptionally high breakdown currents. However one key underlying mechanism, a magnetic field dependent charge transfer process, is yet to be fully understood. Here we report measurements of the quantum Hall effect in epitaxial graphene showing the widest quantum Hall plateau observed to date extending over 50 T, attributed to an almost linear increase in carrier density with magnetic field. This behaviour is strong evidence for field dependent charge transfer from charge reservoirs with exceptionally high densities of states in close proximity to the graphene. Using a realistic framework of broadened Landau levels we model the densities of donor states and predict the field dependence of charge transfer in excellent agreement with experimental results, thus providing a guide towards engineering epitaxial graphene for applications such as quantum metrology. Funding Agencies|UK EPSRC; Graphene Flagship [CNECT-ICT-604391]; EMRP project GraphOhm; AFRL grant [FA9550-15-C-0067]; LNCMI-CNRS; International Collaborative Energy Technology R&D Program of the Korean Institute of Energy Technology Evaluation and Planning (KETEP); Ministry of Trade, Industry & Energy, Republic of Korea [20148520011250]

Interfacing rare-earth doped crystals with superconducting circuit architectures provides an attractive platform for quantum memory and transducer devices. Here we present the detailed characterization of such a hybrid system: a locally implanted rare-earth Gd$^{3+}$ in Al$_2$O$_3$ spin system coupled to a superconducting micro-resonator. We investigate the properties of the implanted spin system through angular dependent micro-resonator electron spin resonance (micro-ESR) spectroscopy. We find, despite the high energy near-surface implantation, the resulting micro-ESR spectra to be in excellent agreement with the modelled Hamiltonian, supporting the integration of dopant ions into their relevant lattice sites whilst maintaining crystalline symmetries. Furthermore, we observe clear contributions from individual microwave field components of our micro-resonator, emphasising the need for controllable local implantation., 6 pages, 3 figures

We study a superconducting charge qubit coupled to an intensive electromagnetic field and probe changes in the resonance frequency of the formed dressed states. At large driving strengths, exceeding the qubit energy-level splitting, this reveals the well known Landau-Zener-Stuckelberg (LZS) interference structure of a longitudinally driven two-level system. For even stronger drives we observe a significant change in the LZS pattern and contrast. We attribute this to photon-assisted quasiparticle tunneling in the qubit. This results in the recovery of the qubit parity, eliminating effects of quasiparticle poisoning and leads to an enhanced interferometric response. The interference pattern becomes robust to quasiparticle poisoning and has a good potential for accurate charge sensing., 5 pages, 4 figures

International audience

Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by $\sim$40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of $T_{e}^4$ at low temperatures and depend weakly on carrier density $\propto$ n$^{-1/2}$ evidence for enhancement of the energy loss rate due to disorder in CVD samples., 8 figs PRB in press

We report the study of the helicity-driven photocurrents in graphene excited by midinfrared light of a CO₂ laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates— under oblique incidence—an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caused by the interplay of the circular ac Hall effect and the circular photogalvanic effect. By studying the frequency dependence of the current in graphene layers grown on the SiC substrate, we observe that the current exhibits a resonance at frequencies matching the longitudinal optical phonon in SiC.

We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed electric and magnetic fields which are however rotating with the light's frequency., 4 pages, 5 figures

Epitaxial graphene has proven itself to be the best candidate for quantum electrical resistance standards due to its wide quantum Hall plateaus with exceptionally high breakdown currents. However one key underlying mechanism, a magnetic field dependent charge transfer process, is yet to be fully understood. Here we report measurements of the quantum Hall effect in epitaxial graphene showing the widest quantum Hall plateau observed to date extending over 50 T, attributed to an almost linear increase in carrier density with magnetic field. This behaviour is strong evidence for field dependent charge transfer from charge reservoirs with exceptionally high densities of states in close proximity to the graphene. Using a realistic framework of broadened Landau levels we model the densities of donor states and predict the field dependence of charge transfer in excellent agreement with experimental results, thus providing a guide towards engineering epitaxial graphene for applications such as quantum metrology.

We observe photocurrents induced in single-layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left to right handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory based on Boltzmann’s kinetic equation is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.

We present fast tunable superconducting microwave resonators fabricated from planar NbN on a sapphire substrate. The $3\lambda/4$ wavelength resonators are tuning fork shaped and tuned by passing a dc current which controls the kinetic inductance of the tuning fork prongs. The $\lambda/4$ section from the open end operates as an integrated impedance converter which creates a nearly perfect short for microwave currents at the dc terminal coupling points, thus preventing microwave energy leakage through the dc lines. We measure an internal quality factor $Q_{\rm int}>10{^{5}}$ over the entire tuning range. We demonstrate a tuning range of $> 3\%$ and tuning response times as short as 20 ns for the maximum achievable detuning. Due to the quasi-fractal design, the resonators are resilient to magnetic fields of up to 0.5 T.