1. Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3
- Author
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Huang, F. -T., Chu, M. -W., Kung, H. H., Lee, W. L., Sankar, R., Liou, S. -C., Wu, K. K., Kuo, Y. K., and Chou, F. C.
- Subjects
Condensed Matter - Materials Science ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences - Abstract
We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defect generated. Major defect types of Bi_Se antisite and partial Bi_2-layer intercalation are identified through combined studies of direct atomic-scale imaging with scanning transmission electron microscopy (STEM) in conjunction with energy-dispersive X-ray spectroscopy (STEM-EDX), X-ray diffraction, and Hall effect measurements. We propose a consistent explanation to the origin of defect type, growth morphology, and transport property., 5 pages, 5 figures
- Published
- 2012