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2 results on '"Lobato, Maria Teresa"'

1. Value creation for emerging acquirers in other emerging economies : a comparison with developed market firms

Author

Lobato, Maria Teresa Fernandes Guimarães and Bunkanwanicha, Pramuan

Subjects
Cross-border acquisitions, Event study, Emerging markets, Value creation and M&A, Ciências Sociais::Economia e Gestão [Domínio/Área Científica]
Abstract

Submitted by Isabel Gomes (itg@lisboa.ucp.pt) on 2013-06-21T14:50:47Z No. of bitstreams: 1 Thesis Maria Teresa Lobato - CLSBE.pdf: 2037463 bytes, checksum: 4f239b97bb13cdf6bae0ea69d7be80a4 (MD5) Approved for entry into archive by Isabel Gomes (itg@lisboa.ucp.pt) on 2013-06-21T14:51:02Z (GMT) No. of bitstreams: 1 Thesis Maria Teresa Lobato - CLSBE.pdf: 2037463 bytes, checksum: 4f239b97bb13cdf6bae0ea69d7be80a4 (MD5) Made available in DSpace on 2013-06-21T14:51:02Z (GMT). No. of bitstreams: 1 Thesis Maria Teresa Lobato - CLSBE.pdf: 2037463 bytes, checksum: 4f239b97bb13cdf6bae0ea69d7be80a4 (MD5) Previous issue date: 2012-06-05

Published
2012

2. Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors

Author

Allegra Sacchetti, Pedro Barquinha, Jacqueline Bablet, Maria Teresa Lobato, Beatrice Fraboni, Rodrigo Martins, Tobias Cramer, Vincent Fischer, Elvira Fortunato, Mohamed Benwadih, Cramer, Tobia, Sacchetti, Allegra, Lobato, Maria Teresa, Barquinha, Pedro, Fischer, Vincent, Benwadih, Mohamed, Bablet, Jacqueline, Fortunato, Elvira, Martins, Rodrigo, and Fraboni, Beatrice

Subjects
010302 applied physics, Materials science, business.industry, Oxide, flexible electronics, thin film transistor, radiation damage, semiconducting oxides, organic electronics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, Flexible electronics, Electronic, Optical and Magnetic Materials, Ionizing radiation, Organic semiconductor, chemistry.chemical_compound, chemistry, Thin-film transistor, Absorbed dose, 0103 physical sciences, Radiation damage, Optoelectronics, 0210 nano-technology, business, Radiation hardening
Abstract

Large-area electronics for applications in environments with radioactive contamination or medical X-ray detectors require materials and devices resistant to continuous ionizing radiation exposure. Here the superior X-ray radiation hardness of oxide thin fi lm transistors (TFTs) based on galliumindium-zinc oxide is demonstrated, when compared to organic ones. In the experiments both TFTs are subjected to X-ray radiation and their performances are monitored as a function of total ionizing dose. Flexible oxide TFTs maintain a constant mobility of 10 cm 2 V −1 s −1 even after exposure to doses of 410 krad(SiO 2 ), whereas organic TFTs lose 55% of their transport performance. The exceptional resistance of oxide semiconductors ionization damage is attributed to their intrinsic properties such as independence of transport on long-range order and large heat of formation.

Published
2016

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