1. Characterization and mechanism of crystallization of Ge films on silicon substrate with graphite buffer layer
- Author
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Yiming Bai, Ma Dayan, Jikun Chen, Congjie Wang, Quanli Tao, and Nuofu Chen
- Subjects
Materials science ,Silicon ,Annealing (metallurgy) ,chemistry.chemical_element ,02 engineering and technology ,01 natural sciences ,Buffer (optical fiber) ,law.invention ,Condensed Matter::Materials Science ,symbols.namesake ,law ,Condensed Matter::Superconductivity ,0103 physical sciences ,Thermal ,General Materials Science ,Graphite ,Crystallization ,010302 applied physics ,Mechanical Engineering ,Sputter deposition ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Chemical engineering ,chemistry ,Mechanics of Materials ,symbols ,0210 nano-technology ,Raman spectroscopy - Abstract
The highly crystallized Ge films have been fabricated by magnetron sputtering and thermal annealing on silicon substrate with a graphite buffer layer which can reduce the lattice mismatch and thermal mismatch. In this paper, we demonstrate the effects of substrate temperature and annealing parameters on Ge film quality through XRD and Raman measurements. The mechanism of the Ge films crystallization during the annealing process is analyzed using the lowest energy principle and the law of Bravais.
- Published
- 2018
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