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314 results on '"Meneghesso, Gaudenzio"'

1. 15. GaN-Based Lateral and Vertical Devices

Author

Meneghini, Matteo, Chowdhury, Srabanti, Derluyn, Joff, Medjdoub, Farid, Ji, Dong, Chun, Jaeyi, Kabouche, Riad, de Santi, Carlo, Zanoni, Enrico, Meneghesso, Gaudenzio, Università degli Studi di Padova = University of Padua (Unipd), Stanford University, EpiGaN, EpiGaN nv, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Massimo Rudan, Rossella Brunetti, Susanna Reggiani, Renatech Network, and CMNF

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics]
Abstract

chapter 15; International audience; In the last decade, GaN has emerged as an excellent material for application in power electronics. The wide energy gap of gallium nitride (3.4 eV) enables high-temperature operation, while the large breakdown field (3.3 MV/cm, 11 times higher than silicon) allows to reach kV-range operation while maintaining a low on-resistance. Thanks to the high mobility of the two-dimensional electron gas at the AlGaN/GaN interface, lateral GaN transistors have a very low on-resistance; commercial products are already on the market, and new technologies are being developed, targeting the 650 V/900 V ranges. Recently, the attention toward vertical GaN transistors has constantly increased: a vertical layout allows to substantially increase current density while taking advantage of the wide bandgap and high breakdown field of GaN. Vertical transistors based on GaN are expected to find application in converters with medium high power levels (>5 to 10 kW), once the technology reaches maturity.This chapter reviews the main properties of GaN-based materials and devices. The first part focuses on the main challenges related to the growth of high-quality GaN epitaxial stacks. The second and the third parts focus on GaN lateral and vertical devices, respectively. Finally, the fourth section describes the trapping and degradation processes that limit the performance and the reliability of GaN transistors, and the related physical mechanisms. This chapter represents an ideal guide for a reader willing to enter the world of GaN devices.

Published
2023

9. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

Author

Gao, Zhan, Meneghini, Matteo, Harrouche, Kathia, Kabouche, Riad, Chiocchetta, Francesca, Marcon, Daniele, Okada, Etienne, Rampazzo, Fabiana, De Santi, Carlo, Medjdoub, Farid, Meneghesso, Gaudenzio, Zanoni, Enrico, Universita degli Studi di Padova, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Support by EUGANIC project under the EDA Contract B 1447 IAP1 GP, by the EC Horizon 2020 ECSEL project 5G_GaN_2, by the ESA ESTEC project RELGAN, and by the Italian Ministryof University and Research (MIUR), PRIN project GANAPPis gratefully acknowledged, PCMP CHOP, European Project: 783274,H2020,H2020-ECSEL-2017-2-RIA-two-stage,5G_GaN2(2018), Università degli Studi di Padova = University of Padua (Unipd), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), european Project EDA- EUGANIC, and Renatech Network

Subjects
010302 applied physics, reliability, FOS: Physical sciences, 020206 networking & telecommunications, Physics - Applied Physics, 02 engineering and technology, Applied Physics (physics.app-ph), AlN/GaN HEMTs, radio frequency, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, electric field, stress, Breakdown mechanism, Electric field, Reliability, Stress, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Safety, Risk, Reliability and Quality, breakdown mechanism
Abstract

Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in all tested devices, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may act as preferential paths for electron trapping. Degradation does not depend on dissipated power and is preliminary attributed to hot-electron trapping, enhanced by electric fields., Comment: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][EUGANIC][EDA Contract B 1447 IAP1 GP][5G_GaN_2]

Published
2021

10. Turning bad into good: a water-splitting-active hole transporting material to preserve the performance of perovskite solar cells in humid environments

Author

Kim, Min, Alfano, Antonio, Perotto, Giovanni, Serri, Michele, Dengo, Nicola, Mezzetti, Alessandro, Gross, Silvia, Prato, Mirko, Salerno, Marco, Sorrentino, Roberto, Meneghesso, Gaudenzio, Di Fonzo, Fabio, Petrozza, Annamaria, Gatti, Teresa, and Lamberti, Francesco

Subjects
Condensed Matter - Materials Science, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Physics - Applied Physics, Applied Physics (physics.app-ph)
Abstract

Lead halide perovskite-based photoactive layers are nowadays employed for a large number of optoelectronic applications, from solar cells to photodetectors and light-emitting diodes, because of their excellent absorption, emission and charge-transport properties. Unfortunately, their commercialization is still hindered by an intrinsic instability towards classical environmental conditions. Water in particular promotes fast decomposition, leading to a drastic decrease in device performance. An innovative functional approach to overcome this major issue could derive from integrating water-splitting active species within charge extracting layers adjacent to the perovskite photoactive layer, converting incoming water molecules into molecular oxygen and hydrogen before they reach this last one, thus preserving device performance in time. In this work we report for the first time on a perovskite-ancillary layer based on CuSCN nanoplateletes dispersed in a p-type semiconducting polymeric matrix, combining hole extraction/transport properties with good water-oxidation activity, that transforms incoming water molecules and further triggers the in situ p-doping of the conjugated polymer by means of the produced dioxygen, further improving transport of photogenerated charges. This composite layer enables the long-term stabilization of a mixed cation lead halide perovskite within a direct solar cell architecture, maintaining a stable performance for 28 days in high-moisture simulated conditions. Our findings demonstrate that the engineering of a hole extraction layer with water-splitting active additives represent a valuable strategy to mitigate the degradation of perovskite solar cells exposed to atmospheric humidity. A similar approach could be employed in the future to improve stabilities of other optoelectronic devices based on water-sensitive species.

Published
2020
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14. High voltage GaN-on-silicon with low-trapping up to 1200 V

Author

Tajalli, Alaleh, Abid, Idriss, Kabouche, Riad, Zegaoui, Malek, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Nishikawa, A, Medjdoub, F, Universita degli Studi di Padova, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), allos semiconductor, and Università degli Studi di Padova = University of Padua (Unipd)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

15. Towards low-trapping GaN-on-silicon material system for 1200 V applications

Author

Tajalli, Alaleh, Abid, Idriss, Kabouche, Riad, Zegaoui, Malek, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Nishikawa, A, Medjdoub, F, Universita degli Studi di Padova, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), allos semiconductor, Università degli Studi di Padova = University of Padua (Unipd), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; This paper presents an assessment of a GaN-on-silicon buffer structure from the epi-wafer providerALLOS Semiconductors GmbH targeting 1200 V power applications. Epiwafers with 150 mmdiameter were grown by MOCVD on Si (111) substrates. Total GaN thickness is 7.1 µm withseveral interlayers for strain management. Owing to ALLOS’ GaN-on-Si growth technologies,high crystal quality of GaN is obtained, with XRD FWHM of (002) and (102) being 395 and 423arcsec, respectively. Because of the thick and excellent crystal quality of GaN buffer, low leakagecurrent and state-of-the-art vertical breakdown voltage above 1400 V was achieved at roomtemperature. Furthermore, it can be pointed out that despite the absence of carbon doping into thebuffer layers, no evidence of punch-through effects has been noticed, which is reflected by anexcellent electron confinement in the DC characteristics of test transistors. In order to clarify theadvantage of this undoped GaN heterostructure, the properties of the new buffer are discussed interms of trapping phenomena using various techniques such as; substrate ramp and back-gatingtransient measurements. Both substrate ramp and back-gating results indicate that the traps arenegligible with the substrate voltage down to -1 kV. Some traps are activated by further decreasingthe substrate voltage down to -1.2 kV which implies the charge injection in the buffer at higherelectric field. This work shows that properly engineered carbon-free GaN-on-siliconheterostructures can not only provide outstanding vertical breakdown voltage with an excellentelectron confinement addressing 1200 V applications but could also generate low trapping effectsbeyond 1 kV in a near future

Published
2018

36. Degradation mechanisms and lifetime of state-of-the-art green laser diodes

Author

Marioli, MICHAEL SIMONE, Meneghini, Matteo, Rossi, F., Salviati, G., DE SANTI, Carlo, Mura, G., Meneghesso, Gaudenzio, and Zanoni, Enrico

Subjects
lifetime, laser diodes, InGaN, degradation
Abstract

This paper presents a detailed analysis of the degradation kinetics and of the reliability of state-of-the-art InGaN-based green laser diodes (LDs), submitted to CW stress tests at different operating conditions. Results described in the following indicate that: (i) constant current stress induces an increase in threshold current (I-th), which is well correlated to a decrease in the sub-threshold emission; (ii) the I-th increase has a power law dependence on stress time; (iii) the degradation rate is strongly dependent on the stress current level while it does not significantly depend on the optical field in the cavity; (iv) stress temperature acts as an accelerating factor for LDs degradation; the activation energy of the degradation process is equal to 258meV; (v) pure thermal storage does not induce a significant degradation of device characteristics. Cathodoluminescence measurements were carried out to get more insight into the physical origin of the degradation process.

Published
2015

38. Analysis of the mechanisms limiting the reliability of retrofit LED lamps

Author

DE SANTI, Carlo, DAL LAGO, Matteo, Buffolo, Matteo, Meneghini, Matteo, Meneghesso, Gaudenzio, and Zanoni, Enrico

Subjects
degradation, diffuser, LED driver, reliability, Retrofit LED lamps, thermal management, white LEDs, Signal Processing, Energy Engineering and Power Technology, Automotive Engineering, Electrical and Electronic Engineering, Industrial and Manufacturing Engineering
Published
2015

40. Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

Author

Bisi, Davide, Meneghini, Matteo, Van Hove, M., Marcon, D, Stoffels, S., T. L., Wu, Decoutere, S., Meneghesso, Gaudenzio, and Zanoni, Enrico

Subjects
buffer layers, charge carrier trapping, GaN, high electron mobility transistors, hot electrons, metal-insulator-semiconductor structures
Published
2015

48. SSL Solutions for Human Centric Lighting

Author

Trivellin, Nicola, Meneghini, Matteo, Barbisan, Diego, Ferretti, Marco, DAL LAGO, Matteo, DE SANTI, Carlo, Buffolo, Matteo, Munaretto, A., Meneghesso, Gaudenzio, and Zanoni, Enrico

Published
2015

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