12 results on '"Mitard, J."'
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2. First demonstration of similar to 3500 cm(2)/V-s electron mobility and sufficient BTI reliability (max V-ov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack
3. Improved extraction of effective electric field and hole mobility in Ge and GeOI MOSFETs
4. Sub-nm EOT high-mobility SiGe-55% channel pFETs: Delivering high performance at scaled VDD
5. A systematic investigation of work function in advanced metal gate HfO2/SiO2 structures with bevel oxide
6. Initial and PBTI-induced traps and charges in Hf(Six)Oy / TiN stacks
7. Large scale time characterization and analysis of PBTI in HfO2/metal gate stacks
8. High-Mobility 0.85nm-EOT Si0.45Ge0.55-pFETs: Delivering high performance at scaled VDD
9. Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs
10. Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack
11. Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling
12. Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling
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