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Comment: to appear in Advanced Optical materials (02/2022), Spin-to-charge conversion (SCC) involving topological surface states (TSS) is one of the most promising routes for highly efficient spintronic devices for terahertz (THz) emission. Here, the THz generation generally occurs mainly via SCC consisting in efficient dynamical spin injection into spin-locked TSS. In this work, we demonstrate sizable THz emission from a nanometric thick topological insultator (TI)/ferromagnetic junction - SnBi$_2$Te$_4$/Co - specifically designed to avoid bulk band crossing with the TSS at the Fermi level, unlike its parent material Bi$_2$Te$_3$. THz emission time domain spectroscopy (TDS) is used to indicate the TSS contribution to the SCC by investigating the TI thickness and angular dependence of the THz emission. This work illustrates THz emission TDS as a powerful tool alongside angular resolved photoemission spectroscopy (ARPES) methods to investigate the interfacial spintronic properties of TI/ferromagnet bilayers.

Phenomena that are absent of bulk TMO compounds can emerge at their interfaces when they are grown on top of each-other. A prototypical example of such emerging states is found at the \(\text {LaAlO}_{3}/\text {SrTiO}_{3}\) interface, which also attracted most of the initial interest for this new field of research (in the TMO context). Here we review some properties of this peculiar interface as investigated by transport measurements allowing the studies of different effects such as magnetism, superconductivity or Rashba effect; hence indirectly accessing the band structures studied by the methods presented in the rest of the book.

The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LaAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements show that the Rashba coupling constant increases linearly with the interfacial electric field. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates.

In LaTiO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures, the bending of the SrTiO3 conduction band at the interface forms a quantum well that contains a superconducting two-dimensional electron gas (2-DEG). Its carrier density and electronic properties, such as superconductivity and Rashba spin-orbit coupling can be controlled by electrostatic gating. In this article we show that the Fermi energy lies intrinsically near the top of the quantum well. Beyond a filling threshold, electrons added by electrostatic gating escape from the well, hence limiting the possibility to reach a highly-doped regime. This leads to an irreversible doping regime where all the electronic properties of the 2-DEG, such as its resistivity and its superconducting transition temperature, saturate. The escape mechanism can be described by the simple analytical model we propose.

We report results of electrical spin injection at the high-mobility quasi-two-dimensional electron system (2-DES) that forms at the LaAlO3/SrTiO3 interface. In a nonlocal, three-terminal measurement geometry, we analyze the voltage variation associated with the precession of the injected spin accumulation driven by perpendicular or transverse magnetic fields (Hanle and inverted Hanle effect). The influence of bias and back-gate voltages reveals that the spin accumulation signal is amplified by resonant tunneling through localized states in the LaAlO3 strongly coupled to the 2-DES by tunneling transfer.

We present a direct comparison between experimental data and ab initio calculations for the electrostrictive effect in the polar LaAlO(3) layer grown on SrTiO(3) substrates. From the structural data, a complete screening of the LaAlO(3) dipole field is observed for film thicknesses between 6 and 20 uc. For thinner films, an expansion of the c axis of 2% matching the theoretical predictions for an electrostrictive effect is observed experimentally.

We report on a study of magnetotransport in LaAlO3 /SrTiO3 interfaces characterized by mobilities of the order of several thousands cm2/V s. We observe Shubnikov-de Haas oscillations whose period depends only on the perpendicular component of the magnetic field. This observation directly indicates the formation of a two-dimensional electron gas originating from quantum confinement at the interface. From the temperature dependence of the oscillation amplitude we extract an effective carrier mass m* ≃ 1.45 m(e). An electric field applied in the back-gate geometry increases the mobility, the carrier density, and the oscillation frequency.

We report experimental investigations of the effects of microstructural defects and of disorder on the properties of 2D electron gases at oxide interfaces. The cross section for scattering of electrons at dislocations in LaAlO(3)/SrTiO(3) interfaces has been measured and found to equal approximately 5 nm. Our experiments reveal that the transport properties of these electron gases are strongly influenced by scattering at dislocation cores.

We explore the relationship between the critical temperature T(c), the mobile areal carrier density n(2D), and the zero-temperature magnetic in-plane penetration depth lambda(ab)(0) in very thin underdoped NdBa(2)Cu(3)O(7-delta) films near the superconductor to insulator transition using the electric-field-effect technique. Having established consistency with a Kosterlitz-Thouless transition, we observe that T(KT) depends linearly on n(2D), the signature of a quantum superconductor to insulator transition in two dimensions with znu(over)=1, where z is the dynamic and nu is the critical exponent of the in-plane correlation length.