1. NiCo 10 at%: A promising silicide alternative to NiPt 15 at% for thermal stability improvement in 3DVLSI integration
- Author
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Deprat, Fabien, Nemouchi, F., Fenouillet-Beranger, C., Batude, P., Previtali, B., Danielou, M., Rodriguez, P., Favier, S., Fournier, C., Gergaud, P., and Vinet, M.
- Subjects
ddc:621.3 ,Temperaturbeständigkeit ,Silicide ,NiCo, silicide, 3D sequential, thermal stability ,ddc:620 - Abstract
3D VLSI with a CoolCube TM process allows vertically stacking several layers of devices with a unique connecting via density above a million/mm2. The thermal budget allowed to process the top transistor is currently limited by NiPt silicide stability of the bottom transistor. To extend the upper transistors thermal process window, Pre-Amorphization Implant (PAI) and Si-Capping were used to improve the stability of NiPt 15% on SiC:P and SiGe 30% :B accesses. While PAI enhances the silicide stability on SiC:P substrate from 600°C 2h to 700°C 2h, neither PAI nor Si-Capping improve silicide stability on SiGe 30% :B. To provide a solution for P accesses stability, NiCo 10% silicidation has been developed. Combined with PAI and Si-Capping, the germano-silicide offers a higher stability (up to 600°C 2h) than its NiPtSi 15% counterpart.
- Published
- 2016