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Infrared spectroscopy studies on pentacene single crystals have been performed in the frequency range of 12 meV to 3 eV in reflection and transmission configurations as a function of temperature, down to 10 K. Our results reveal the dominant contributions of the excitonic bands at the absorption edge. The singlet transitions of the Frenkel excitons at 1.78 eV with 130 meV Davydov splitting have been identified. An additional excitonic feature observed at 1.83 eV can be assigned to a charge-transfer type exciton evidenced by the strong vibrational anomalies. On the other hand, the strong feature seen at 1.67 eV does not couple to the vibrational modes suggests that electronic origin in nature.

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Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing, secure networks and nanosensing. For many of these applications it is necessary to have control over single emitters with long spin coherence times. Such single quantum systems have been realized using quantum dots, colour centres in diamond, dopants in nanostructures and molecules . More recently, ensemble emitters with spin dephasing times on the order of microseconds and room-temperature optically detectable magnetic resonance have been identified in silicon carbide (SiC), a compound being highly compatible to up-to-date semiconductor device technology. So far however, the engineering of such spin centres in SiC on single-emitter level has remained elusive. Here, we demonstrate the control of spin centre density in ultrapure SiC over 8 orders of magnitude, from below $10^{9}$ to above $10^{16} \,$cm$^{-3}$ using neutron irradiation. For a low irradiation dose, a fully photostable, room-temperature, near infrared (NIR) single photon emitter can clearly be isolated, demonstrating no bleaching even after $10^{14}$ excitation cycles. Based on their spectroscopic fingerprints, these centres are identified as silicon vacancies, which can potentially be used as qubits, spin sensors and maser amplifiers., 5 pages, 4 figures

We investigate effects of the local structure on the excitonic transport in C60 thin films by means of temperature-dependent photoluminescence quenching studies in a range of 5 to 300 K. Exciton motion in the X-ray amorphous layers indicates thermally activated transport initiated above 80 K accompanied by a thermalization of excitations into low lying states within the excitonic density of states. Discontinuities in the temperature-dependent photoluminescence behavior can be attributed to a continuous phase transition at 80 K and a first order phase transition at 180 K, thereby revealing structural information on the local film morphology in the C60 films.

The exciton dynamics on flat (001) rubrene crystal surfaces have been compared with those under confined pyramidal geometry by time-resolved photoluminescence with micrometer spatial resolution. The luminescence spectra can be interpreted in terms of generation of a free and a self-trapped exciton. Their ratio depends significantly on the structural size which we explain by the optical absorption profile of the pyramids in combination with the exciton diffusion constant. For the latter a lower limit of 0.2 cm2/s at 4 K has been estimated. Temperature-dependent decay times reveal activation barriers between free and self-trapped exciton of 3 meV and 14 meV., 4 pages, 4 figures

We use ultraviolet photoelectron spectroscopy to investigate the effect of oxygen and air exposure on the electronic structure of pentacene single crystals and thin films. it is found that O-2 and water do not react noticeably with pentacene, whereas singlet oxygen/ozone readily oxidize the organic compound. Also, we obtain no evidence for considerable p-type doping of pentacene by O-2 at low pressure. However, oxygen exposure lowers the hole injection barrier at the interface between An and pentacene by 0.25 eV, presumably due to a modification of the An surface properties.